Ordering number : ENA0544
2SA2205
SANYO Semiconductors
DATA SHEET
2SA2205
Applications
•
PNP Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
DC / DC converter, Relay drivers, lamp drivers, motor drivers.
Features
•
•
•
•
•
Adoption of FBET, MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
--100
--100
--100
--7
--2
--3
--400
0.8
15
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=-
-80V, IE=0A
VEB=-
-4V, IC=0A
VCE=-
-5V, IC=--100mA
VCE=-
-10V, IC=--500mA
VCB=-
-10V, f=1MHz
200
300
20
Ratings
min
typ
max
--1
--1
400
MHz
pF
Unit
µA
µA
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806EA SY IM TC-00000309 No. A0544-1/4
2SA2205
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitterr Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Symbol
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
IC=--1A, IB=--100mA
IC=--1A, IB=--100mA
IC=--10µA, IE=0A
IC=--100µA, RBE=0Ω
IC=--1mA, RBE=∞
IE=--10µA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
--100
--100
--100
--7
40
600
30
Ratings
min
typ
--120
--0.85
max
--240
--1.2
Unit
mV
V
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7518-003
6.5
5.0
2.3
1.5
Package Dimensions
unit : mm (typ)
7003-003
6.5
5.0
2.3
1.5
0.5
0.5
4
4
7.0
5.5
5.5
7.0
0.8
1.6
7.5
1
0.5
0.6
2
0.8
1.2
3
0 to 0.2
1.2
0.6
2.5
0.85
0.7
0.85
0.5
1.2
1
2
3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
2.3
2.3
Switching Time Test Circuit
PW=20µs
D.C.≤1%
INPUT
50Ω
+
220µF
VBE=5V
+
470µF
VCC= --50V
IB1
OUTPUT
IB2
VR
1kΩ
RL
IC= --10IB1=10IB2= --0.5A
No. A0544-2/4
2SA2205
--2.0
--1.8
IC -- VCE
--1
8
0m
A
--140mA
--120mA
--100mA
--80mA
--60mA
--40mA
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
IC -- VBE
VCE= --5V
Collector Current, IC -- A
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
0
0
--2
0
--160m
A
--20mA
--5mA
Collector Current, IC -- A
--1.6
0m
A
C
--0.2
--0.4
--0.4
--0.2
IB=0mA
--0.05 --0.1 --0.15 --0.2 --0.25 --0.3 --0.35 --0.4 --0.45 --0.5
0
0
Ta=75
°
--0.6
25
°C
--25
°
C
--0.8
--0.6
--1.0
--1.2
IT11664
Collector-to-Emitter Voltage, VCE -- V
1000
7
5
IT11663
1000
7
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
fT -- IC
VCE= --5V
VCE= --10V
Gain-Bandwidth Product, fT -- MHz
7 --0.1
2
3
5
7 --1.0
2
3
5
Ta=75°C
25°C
5
3
2
DC Current Gain, hFE
3
2
--25°C
100
7
5
3
2
100
7
5
3
2
10
--0.01
2
3
5
10
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
Collector Current, IC -- A
100
7
IT11665
5
Collector Current, IC -- A
IT11666
Cob -- VCB
f=1MHz
VCE(sat) -- IC
IC / IB=10
Output Capacitance, Cob -- pF
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
3
2
--0.1
7
5
3
2
10
7
5
3
2
7
Ta=
5
°
C
--25
°
C
25
°
C
7
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
--0.01
1.0
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7 --100
IT11667
Collector-to-Base Voltage, VCB -- V
2
VBE(sat) -- IC
Collector Current, IC -- A
5
IT11668
ASO
IC / IB=10
3
2
ICP= --3A
IC= --2A
<10µs
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Current, IC -- A
--1.0
Ta= --25°C
7
--1.0
7
5
3
2
--0.1
7
5
3
2
10
1m
s
100
µ
s
0m
s
10
m
500
µ
s
DC
s
75
°
C
5
on
rati
ope
25
°
C
3
2
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
--0.01
--0.1
Tc=25°C
Single pulse
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7--100
2
Collector Current, IC -- A
IT11669
Collector-to-Emitter Voltage, VCE -- V
IT11670
No. A0544-3/4
2SA2205
7
5
3
2
ASO
ICP= --3A
IC= --2A
<10µs
0.9
PC -- Ta
Collector Current, IC -- A
--1.0
7
5
3
2
--0.1
7
5
3
2
10
0
Collector Dissipation, PC -- W
2
1m
ms
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
µ
s
100
50
s
0
µ
s
DC
op
era
10
ms
tio
n
--0.01
7
5
3
2
--0.001
--0.1
Ta=25°C
Single pulse
2
3
5 7 --1.0
2
3
5 7 --10
2
3
5 7--100
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
17.5
IT11671
Ambient Temperature, Ta --
°C
IT11652
PC -- Tc
15.0
Collector Dissipation, PC -- W
12.5
10.0
7.5
5.0
2.5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT11653
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic
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or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0544-4/4
测试/测量
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