DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA78, TWBGA-78
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) |
| 包装说明 | TFBGA, BGA78,9X13,32 |
| Reach Compliance Code | compliant |
| Factory Lead Time | 10 weeks |
| 访问模式 | MULTI BANK PAGE BURST |
| 最长访问时间 | 0.255 ns |
| 其他特性 | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 667 MHz |
| I/O 类型 | COMMON |
| 交错的突发长度 | 4,8 |
| JESD-30 代码 | R-PBGA-B78 |
| 长度 | 10.5 mm |
| 内存密度 | 2147483648 bit |
| 内存集成电路类型 | DDR DRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 78 |
| 字数 | 268435456 words |
| 字数代码 | 256000000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | |
| 组织 | 256MX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TFBGA |
| 封装等效代码 | BGA78,9X13,32 |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 电源 | 1.5 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 8192 |
| 座面最大高度 | 1.2 mm |
| 自我刷新 | YES |
| 连续突发长度 | 4,8 |
| 最大待机电流 | 0.014 A |
| 最大压摆率 | 0.245 mA |
| 最大供电电压 (Vsup) | 1.575 V |
| 最小供电电压 (Vsup) | 1.425 V |
| 标称供电电压 (Vsup) | 1.5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | OTHER |
| 端子形式 | BALL |
| 端子节距 | 0.8 mm |
| 端子位置 | BOTTOM |
| 宽度 | 8 mm |
| Base Number Matches | 1 |
| IS43TR82560B-15HBL | IS43TR16128B-125KBLI | IS43TR16128B-15HBLI | IS43TR16128BL-125KBL | IS43TR82560B-125KBLI | IS43TR82560BL-125KBLI | |
|---|---|---|---|---|---|---|
| 描述 | DDR DRAM, 256MX8, 0.255ns, CMOS, PBGA78, TWBGA-78 | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, BGA-96 | DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, BGA-96 | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96, TWBGA-96 | DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78, TWBGA-78 | DDR DRAM, 256MX8, CMOS, PBGA78, TWBGA-78 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
| 包装说明 | TFBGA, BGA78,9X13,32 | BGA-96 | BGA-96 | TWBGA-96 | TFBGA, | TFBGA, |
| Reach Compliance Code | compliant | compli | compli | compli | compliant | compliant |
| Factory Lead Time | 10 weeks | 6 weeks | 6 weeks | 6 weeks | 10 weeks | 10 weeks |
| 访问模式 | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 代码 | R-PBGA-B78 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B96 | R-PBGA-B78 | R-PBGA-B78 |
| 长度 | 10.5 mm | 13 mm | 13 mm | 13 mm | 10.5 mm | 10.5 mm |
| 内存密度 | 2147483648 bit | 2147483648 bi | 2147483648 bi | 2147483648 bi | 2147483648 bit | 2147483648 bit |
| 内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 8 | 16 | 16 | 16 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 78 | 96 | 96 | 96 | 78 | 78 |
| 字数 | 268435456 words | 134217728 words | 134217728 words | 134217728 words | 268435456 words | 268435456 words |
| 字数代码 | 256000000 | 128000000 | 128000000 | 128000000 | 256000000 | 256000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | SYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | - | -40 °C | -40 °C | - | -40 °C | -40 °C |
| 组织 | 256MX8 | 128MX16 | 128MX16 | 128MX16 | 256MX8 | 256MX8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 自我刷新 | YES | YES | YES | YES | YES | YES |
| 最大供电电压 (Vsup) | 1.575 V | 1.575 V | 1.575 V | 1.45 V | 1.575 V | 1.45 V |
| 最小供电电压 (Vsup) | 1.425 V | 1.425 V | 1.425 V | 1.283 V | 1.425 V | 1.283 V |
| 标称供电电压 (Vsup) | 1.5 V | 1.5 V | 1.5 V | 1.35 V | 1.5 V | 1.35 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | OTHER | INDUSTRIAL | INDUSTRIAL | OTHER | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 宽度 | 8 mm | 9 mm | 9 mm | 9 mm | 8 mm | 8 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
| 最长访问时间 | 0.255 ns | 0.225 ns | 0.255 ns | 0.225 ns | 0.225 ns | - |
| 最大时钟频率 (fCLK) | 667 MHz | 800 MHz | 667 MHz | 800 MHz | - | - |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | - | - |
| 交错的突发长度 | 4,8 | 4,8 | 4,8 | 4,8 | - | - |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - | - |
| 封装等效代码 | BGA78,9X13,32 | BGA96,9X16,32 | BGA96,9X16,32 | BGA96,9X16,32 | - | - |
| 电源 | 1.5 V | 1.5 V | 1.5 V | 1.35 V | - | - |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | - |
| 刷新周期 | 8192 | 8192 | 8192 | 8192 | - | - |
| 连续突发长度 | 4,8 | 4,8 | 4,8 | 4,8 | - | - |
| 最大待机电流 | 0.014 A | 0.014 A | 0.014 A | 0.014 A | - | - |
| 最大压摆率 | 0.245 mA | 0.33 mA | 0.286 mA | 0.285 mA | - | - |
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