OM6009SA OM6011SA OM6109SA OM6111SA
OM6010SA OM6012SA OM6110SA OM6112SA
POWER MOSFETS IN HERMETIC ISOLATED
TO-254AA PACKAGE
100V Thru 500V, Up To 22 Amp, N-Channel
MOSFET In Hermetic Metal Package, With
Optional Zener Gate Clamp Protection
FEATURES
•
•
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels
Bi-Lateral Zener Gate Protection (Optional)
Ceramic Feedthroughs Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications
such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits. The MOSFET gates are protected using
bi-lateral zeners in the OM6109SA series.
MAXIMUM RATINGS
PART NUMBER
OM6009SA, OM6109SA
OM6010SA, OM6110SA
OM6011SA, OM6111SA
OM6012SA, OM6112SA
V
DS
100V
200V
400V
500V
R
DS(ON)
.095
.18
.55
.85
I
D(MAX)
22A
18A
10A
8A
3.1
Note: OM61XX Series include gate protection circuitry.
SCHEMATIC
POWER RATING
4 11 R3
Supersedes 1 07 R2
3.1 - 79
3.1
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6010SA / OM6110SA
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
GSS
I
DSS
Current
T
C
= 125° C
I
D(on)
V
DS(on)
Static Drain-Source On-State
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
T
C
= 125 C
0.28 0.36
0.14 0.18
V
GS
= 10 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 10 A,
1.4
1.8
V
V
GS
= 10 V, I
D
= 10 A
On-State Drain
Current
1
18
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Gate-Body Leakage (OM6110)
± 500
nA
V
GS
= ± 12.8 V
Gate-Body Leakage Reverse
- 100
nA
V
GS
= - 20 V
Gate-Body Leakage Forward
100
nA
V
GS
= 20 V
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS,
I
D
= 250
mA
I
D
= 250
mA
200
V
V
GS
= 0,
Min. Typ. Max. Units Test Conditions
STATIC P/N OM6009SA / OM6109SA
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
GS
= ± 12.8 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A,
T
C
= 125 C
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
100
V
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
OM6009SA - OM6112SA
I
GSSF
Gate-Body Leakage Forward
100
nA
I
GSSR
Gate-Body Leakage Reverse
-100
nA
I
GSS
Gate-Body Leakage (OM6109)
± 500
nA
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
Current
0.2
1.0
mA
I
D(on)
On-State Drain
Current
1
22
A
V
DS(on)
Static Drain-Source On-State
1.275 1.425
V
Voltage
1
R
DS(on)
Static Drain-Source On-State
.085 .095
Resistance
1
R
DS(on)
Static Drain-Source On-State
.130 .155
Resistance
1
g
fs
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
= 5 A
R
g
= 5
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
Forward Transductance
1
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Fall Time
Turn-Off Delay Time
Rise Time
52
36
30
Turn-On Delay Time
17
Reverse Transfer Capacitance
100
Output Capacitance
250
pF
pF
ns
ns
ns
ns
Input Capacitance
1000
pF
6.0
(W )
10.0
S(W
)
V
DS
2 V
DS(on)
, I
D
= 15 A
C
iss
Input Capacitance
1275
pF
C
oss
Output Capacitance
550
pF
C
rss
Reverse Transfer Capacitance
160
pF
T
d(on)
Turn-On Delay Time
16
ns
t
r
Rise Time
19
ns
T
d(off)
Turn-Off Delay Time
42
ns
t
f
Fall Time
24
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
D
I
S
symbol showing
the integral P-N
Junction rectifier.
S
G
Continuous Source Current
(Body Diode)
I
SM
(Body Diode)
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
Source Current
1
- 27
A
(Body Diode)
I
SM
T
C
= 25 C, I
S
= -24 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
Source Current
1
- 108
A
(Body Diode)
V
SD
Diode Forward Voltage
1
- 2.5
V
t
rr
Reverse Recovery Time
200
ns
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
I
S
Continuous Source Current
- 18
- 72
-2
350
A
A
V
ns
3.1 - 80
DYNAMIC
Forward Transductance
1
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
DYNAMIC
S(W
)
V
DS
2 V
DS(on)
, I
D
= 10 A
V
DD
= 75 V, I
D
@
18 A
R
g
= 5
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -18 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
T
C
= 25° unless otherwise noted
ELECTRICAL CHARACTERISTICS:
STATIC P/N OM6012SA / OM6112SA
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSSF
I
GSSR
I
GSS
I
DSS
Current
T
C
= 125° C
I
D(on)
V
DS(on)
Static Drain-Source On-State
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
T
C
= 125 C
1.50 1.65
0.8
0.85
V
GS
= 10 V, I
D
= 4 A
V
GS
= 10 V, I
D
= 4 A,
3.2
3.4
V
V
GS
= 10 V, I
D
= 4 A
On-State Drain
Current
1
8.0
A
V
DS
2 V
DS(on)
, V
GS
= 10 V
0.2
1.0
mA
V
DS
= 0.8 Max. Rat., V
GS
= 0,
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS
= Max. Rat., V
GS
= 0
Gate-Body Leakage (OM6112)
± 500
nA
V
GS
= ± 12.8 V
Gate-Body Leakage Reverse
- 100
nA
V
GS
= - 20 V
Gate-Body Leakage Forward
100
nA
V
GS
= 20 V
Gate-Threshold Voltage
2.0
4.0
V
V
DS
= V
GS,
I
D
= 250
mA
I
D
= 250
mA
500
V
V
GS
= 0,
Min. Typ. Max. Units Test Conditions
STATIC P/N OM6011SA / OM6111SA
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 20 V
V
GS
= - 20 V
V
GS
= ± 12.8 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 5 A
V
GS
= 10 V, I
D
= 5 A,
T
C
= 125 C
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
400
V
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
I
GSSF
Gate-Body Leakage Forward
100
nA
I
GSSR
Gate-Body Leakage Reverse
-100
nA
I
GSS
Gate-Body Leakage (OM6111)
± 500
nA
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
Current
0.2
1.0
mA
I
D(on)
On-State Drain
Current
1
10
A
V
DS(on)
Static Drain-Source On-State
2.35 2.75
V
Voltage
1
R
DS(on)
Static Drain-Source On-State
0.47 0.55
Resistance
1
R
DS(on)
Static Drain-Source On-State
0.93 1.10
Resistance
1
g
fs
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 175 V, I
D
@
5 A
R
g
= 5
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
Forward Transductance
1
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Fall Time
Turn-Off Delay Time
Rise Time
5
42
14
Turn-On Delay Time
17
Reverse Transfer Capacitance
85
Output Capacitance
200
Input Capacitance
1275
pF
pF
pF
ns
ns
ns
ns
4.0
(W )
4.0
S(W
)
V
DS
2 V
DS(on)
, I
D
= 5 A
C
iss
Input Capacitance
1150
pF
C
oss
Output Capacitance
165
pF
C
rss
Reverse Transfer Capacitance
70
pF
T
d(on)
Turn-On Delay Time
17
ns
t
r
Rise Time
12
ns
T
d(off)
Turn-Off Delay Time
45
ns
t
f
Fall Time
30
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
D
I
S
symbol showing
the integral P-N
Junction rectifier.
S
G
Continuous Source Current
(Body Diode)
I
SM
Source
(Body Diode)
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
Current
1
- 10
A
(Body Diode)
I
SM
T
C
= 25 C, I
S
= -10 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
Source
Current
1
- 40
A
(Body Diode)
V
SD
Diode Forward Voltage
1
-2
V
t
rr
Reverse Recovery Time
530
ns
OM6009SA - OM6112SA
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
I
S
Continuous Source Current
-8
- 32
-2
700
A
A
V
ns
3.1 - 81
DYNAMIC
Forward Transductance
1
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
DYNAMIC
S(W
)
V
DS
2 V
DS(on)
, I
D
= 4 A
V
DD
= 200 V, I
D
=
4 A
R
g
= 5
W
, V
GS
= 10 V
(MOSFET) switching times are
essentially independent of
operating temperature.
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -18 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/ms
3.1
OM6009SA - OM6112SA
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
V
GS
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Gate-Source Volt. (Unclamped Gate)
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
OM6009
OM6109
100
100
± 22
± 17
± 88
± 20
125
50
1.0
.020
OM6010
OM6110
200
200
± 18
± 11
± 72
± 20
125
50
1.0
.020
OM6011
OM6111
400
400
± 10
±6
± 40
± 20
125
50
1.0
.020
OM6012
OM6112
500
500
±8
±5
± 32
± 20
125
50
1.0
.020
Units
V
V
A
A
A
V
W
W
W/°C
W/°C
Junction To Ambient Linear Derating Factor
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/16" from case for 10 secs.)
-55 to 150
300
-55 to 150 -55 to 150 -55 to 150
300
300
300
°C
°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitation = 25 Amps
THERMAL RESISTANCE
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
1.0
50
°C/W
°C/W
Free Air Operation
MECHANICAL OUTLINE
.144 DIA.
.940
.740
.260
MAX
.200
.100
2 PLCS.
.040
.545
.535
.050
.040
3.1
.290
.540
.250
.685
.665
.800
.790
.550
.530
.125 DIA.
2 PLS.
.540
.125
2 PLCS.
1 2 3
.500
MIN.
1
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.150
2
3
.550
.510
.005
.150
.300
.040 DIA.
3 PLCS.
.045
.035
.150 TYP.
.260
.249
.150 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
NOTE:
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number.
Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
模拟与混合信号
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