2SA778(K), 2SA778A(K)
Silicon PNP Epitaxial
REJ03G0628-0300
Rev.3.00
Jul 30, 2007
Application
High voltage medium speed switching
Outline
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
1. Emitter
2. Collector
3. Base
3
2
1
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2SA778(K)
–150
–150
–5
–50
200
150
–55 to +150
2SA778A(K)
–180
–180
–5
–50
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 1 of 7
2SA778(K), 2SA778A(K)
Electrical Characteristics
(Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter
saturation voltage
Base to emitter saturation
voltage
Collector output
capacitance
Gain bandwidth product
Turn on time
Turn off time
Storage time
Symbol
V
(BR)CBO
V
(BR)CER
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Cob
f
T
t
on
t
off
t
stg
2SA778(K)
Min
Typ
Max
–150
—
—
–150
—
—
—
30
—
—
—
—
—
—
—
—
—
—
—
100
–0.3
–0.77
—
50
135
1.7
—
—
–1.0
—
–1.0
—
–1.0
–1.0
10
—
—
—
1.0
2SA778A(K)
Min
Typ
Max
–180
—
—
–180
—
—
—
40
—
—
—
—
—
—
—
—
—
—
—
100
–0.3
–0.77
—
50
135
1.7
—
—
—
–1.0
–1.0
200
–1.0
–1.0
10
—
—
—
1.0
Unit
V
V
µA
µA
µA
Test conditions
I
C
= –50
µA,
I
E
= 0
I
C
= –50
µA,
R
BE
= 30 kΩ
V
CB
= –100 V, I
E
= 0
V
CB
= –150 V, I
E
= 0
V
EB
= –5 V, I
C
= 0
V
CE
= –3 V,
I
E
= –15 mA
V
V
pF
MHz
ns
µs
µs
I
C
= –15 mA,
I
B
= –1 mA
I
C
= –15 mA,
I
B
= –1 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
V
CE
= –3 V,
I
C
= –15 mA
V
CC
= –10.3 V
I
C
= 10 I
B1
= –10
I
B2
= –10 mA
V
CC
= –10 V,
I
C
=–17 mA
I
B1
= –1mA,
I
B2
= –12 mA
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 2 of 7
2SA778(K), 2SA778A(K)
Main Characteristics
Maximum Collector Dissipation Curve
Collector power dissipation P
c
(mW)
300
–50
Typical Output Characteristics (1)
–0.9
–0.8
–0.7
–1
.0
P
C
=
Collector Current I
C
(mA)
–40
–0.6
–0.5
20
0
m
W
200
–0.4
–30
–0.3
–0.2
–0.15
–0.1
–0.05 mA
I
B
= 0
–20
100
–10
0
50
100
150
0
–1
–2
–3
–4
–5
Ambient Temperature Ta (°C)
Collector to Emitter Voltage V
CE
(V)
Collector Cutoff Current vs.
Collector to Base Voltage
–300
125
Typical Output Characteristics (2)
–0.5
Collector Current I
CBO
(nA)
Collector Current I
C
(mA)
–0.4
–4
–100
100
–0.3
–3
–30
75
–10
–3
–1.0
–0.3
50
Ta =
25
°
C
–0.2
–2
–0.1
– 1
µ
A
I
B
= 0
0
–40
–80
–120
–160
–200
0
–40
–80 –120 –160 –200
Collector to Emitter Voltage V
CE
(V)
DC Current Transfer Ratio vs.
Collector Current
Collector to emitter saturation voltage
V
CE
(sat) (V)
140
V
CE
= –3 V
75
50
Collector to Base Voltage V
CB
(V)
Collector to Emitter Saturation Voltage vs.
Collector Current
–2.0
I
C
= 10 I
B
DC current transfer ratio h
FE
120
–1.6
100
25
0
5
°
C
–1.2
80
–2
Ta =
–0.8
60
–0.4
40
–1
–2
–5
–10
–20
–50
0
–0.1 –0.2 –0.5 –1.0 –2
–5 –10 –20
–50
Collector Current I
C
(mA)
Collector Current I
C
(mA)
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 3 of 7
2SA778(K), 2SA778A(K)
Base to Emitter Saturation Voltage vs.
Collector Current
Input and Output Capacitance vs.
Voltage
Collector output capacitance C
ob
(pF)
Emitter input capacitance C
ib
(pF)
Base to emitter saturation voltage
V
BE (sat)
(V)
–0.9
I
C
= 10 I
B
12
10
8
6
C
ob
(I
E
= 0)
4
2
0
–0.5 –1.0
C
ib
(I
C
= 0)
f = 1 MHz
–0.8
–25
0
–0.7
25
50
5
°
C
=7
–0.6
Ta
–0.5
–0.4
–0.1 –0.2 –0.5 –1.0 –2
–5 –10 –20
–50
–2
–5
–10
–20
–50
Collector Current I
C
(mA)
Gain Bandwidth Product vs.
Collector Current
Collector to Base Voltage V
CB
(V)
Emitter to Base Voltage V
EB
(V)
Switching Time vs. Collector Current
5
I
C
= 10 I
B1
= –10 I
B2
Gain bandwidth product f
T
(MHz)
60
V
CE
= –3 V
50
40
30
20
10
2
Switching time t (µs)
t
off
t
stg
1.0
0.5
0.2
0.1
0.05
0.02
t
on
t
d
0
–0.5 –1.0
–2
–5
–10
–20
–50
0.01
–0.5–1.0 –2
–5 –10 –20 –50
Collector Current I
C
(mA)
Collector Current I
C
(mA)
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 4 of 7
2SA778(K), 2SA778A(K)
Switching Time Test Circuit
t
on
, t
off
Test Circuit
D.U.T.
6k
6k
0.002
0.002
Switching Time Test Circuit
t
stg
Test Circuit
510
D.U.T
0.1
2.4 k
P.G.
t
r
, t
f
5ns
PW 5µs
duty ratio = 50%
50
–
–3 V
50
+ +
50
–
–10 V
Unit R :
Ω
C :
µF
0.002
0.002
0.1
CRT
16
CRT
1k
P.G.
t
r
, t
f
15ns
PW 5µs
duty ratio 10%
50
+
6V
50
– +
50
–
–10.3 V
Unit
R :
Ω
C :
µF
Response Waveform
0
Input
–13 V
0
Output
t
d
t
on
10%
90%
t
stg
10%
90%
t
off
+7 V
Input
0
0
Output
Response Waveform
10%
10%
t
stg
10%
90%
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 5 of 7
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