74LVC1G38
2-input NAND gate; open drain
Rev. 7 — 4 October 2012
Product data sheet
1. General description
The 74LVC1G38 provides a 2-input NAND function.
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this
device as translator in a mixed 3.3 V and 5 V environment.
This device is fully specified for partial power-down applications using I
OFF
. The I
OFF
circuitry disables the output, preventing the damaging backflow current through the device
when it is powered down.
2. Features and benefits
Wide supply voltage range from 1.65 V to 5.5 V
5 V tolerant outputs for interfacing with 5 V logic
High noise immunity
Complies with JEDEC standard:
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8-B/JESD36 (2.7 V to 3.6 V).
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
24
mA output drive (V
CC
= 3.0 V)
CMOS low power consumption
Open drain outputs
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
Specified from
40 C
to +125
C.
NXP Semiconductors
74LVC1G38
2-input NAND gate; open drain
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74LVC1G38GW
74LVC1G38GV
74LVC1G38GM
74LVC1G38GF
74LVC1G38GN
74LVC1G38GS
74LVC1G38GX
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
40 C
to +125
C
Name
TSSOP5
SC-74A
XSON6
XSON6
XSON6
XSON6
X2SON5
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
plastic surface-mounted package; 5 leads
Version
SOT353-1
SOT753
Type number
plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1
1.45
0.5 mm
plastic extremely thin small outline package; no leads; SOT891
6 terminals; body 1
1
0.5 mm
extremely thin small outline package; no leads;
6 terminals; body 0.9
1.0
0.35 mm
extremely thin small outline package; no leads;
6 terminals; body 1.0
1.0
0.35 mm
X2SON5: plastic thermal enhanced extremely thin
small outline package; no leads; 5 terminals;
body 0.8
0.8
0.35 mm
SOT1115
SOT1202
SOT1226
4. Marking
Table 2.
Marking
Marking code
[1]
YB
YB
YB
YB
YB
YB
YB
Type number
74LVC1G38GW
74LVC1G38GV
74LVC1G38GM
74LVC1G38GF
74LVC1G38GN
74LVC1G38GS
74LVC1G38GX
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
Y
1
2
A
Y 4
B
001aab717
1
2
A
&
4
B
001aab716
GND
001aab715
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram
74LVC1G38
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 7 — 4 October 2012
2 of 19
NXP Semiconductors
74LVC1G38
2-input NAND gate; open drain
6. Pinning information
6.1 Pinning
74LVC1G38
74LVC1G38
A
B
1
2
GND
GND
3
001aab718
A
5
V
CC
1
6
V
CC
B
2
5
n.c.
3
4
Y
4
Y
001aab832
Transparent top view
Fig 4.
Pin configuration SOT353-1 and SOT753
Fig 5.
Pin configuration SOT886
/9&*
74LVC1G38
$
*1'
%
DDD
A
B
GND
1
2
3
9
&&
6
5
4
V
CC
n.c.
Y
<
001aaf180
Transparent top view
7UDQVSDUHQW WRS YLHZ
Fig 6.
Pin configuration SOT891, SOT1115 and
SOT1202
Fig 7.
Pin configuration SOT1226 (X2SON5)
6.2 Pin description
Table 3.
Symbol
A
B
GND
Y
n.c.
V
CC
Pin description
Pin
TSSOP5 and X2SON5
1
2
3
4
-
5
XSON6
1
2
3
4
5
6
data input
data input
ground (0 V)
data output
not connected
supply voltage
Description
74LVC1G38
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 7 — 4 October 2012
3 of 19
NXP Semiconductors
74LVC1G38
2-input NAND gate; open drain
7. Functional description
Table 4.
Input
A
L
L
H
H
[1]
Function table
[1]
Output
B
L
H
L
H
Y
Z
Z
Z
L
H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF state
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
V
I
I
OK
V
O
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
[3]
Parameter
supply voltage
input clamping current
input voltage
output clamping current
output voltage
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
< 0 V
[1]
Min
0.5
50
0.5
-
[1][2]
[1][2]
Max
+6.5
-
+6.5
50
+6.5
+6.5
50
100
-
+150
300
Unit
V
mA
V
mA
V
V
mA
mA
mA
C
mW
V
O
> V
CC
or V
O
< 0 V
Active mode
Power-down mode
V
O
= 0 V to V
CC
0.5
0.5
-
-
100
65
T
amb
=
40 C
to +125
C
[3]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
When V
CC
= 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
For TSSOP5 and SC-74A packages: above 87.5
C
the value of P
tot
derates linearly with 4.0 mW/K.
For XSON6 and X2SON 5packages: above 118
C
the value of P
tot
derates linearly with 7.8 mW/K.
74LVC1G38
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 7 — 4 October 2012
4 of 19
NXP Semiconductors
74LVC1G38
2-input NAND gate; open drain
9. Recommended operating conditions
Table 6.
Symbol
V
CC
V
I
V
O
Recommended operating conditions
Parameter
supply voltage
input voltage
output voltage
Active mode
Disable mode; V
CC
= 1.65 V to 5.5 V
Power-down mode; V
CC
= 0 V
T
amb
t/V
ambient temperature
input transition rise and V
CC
= 1.65 V to 2.7 V
fall rate
V
CC
= 2.7 V to 5.5 V
Conditions
Min
1.65
0
0
0
0
40
-
-
Typ
-
-
-
-
-
-
-
-
Max
5.5
5.5
5.5
5.5
5.5
+125
20
10
Unit
V
V
V
V
V
C
ns/V
ns/V
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
T
amb
=
40 C
to +85
C
[1]
V
IH
HIGH-level input voltage
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
IL
LOW-level input voltage
V
CC
= 1.65 V to 1.95 V
V
CC
= 2.3 V to 2.7 V
V
CC
= 2.7 V to 3.6 V
V
CC
= 4.5 V to 5.5 V
V
OL
LOW-level output voltage
V
I
= V
IH
or V
IL
I
O
= 100
A;
V
CC
= 1.65 V to 5.5 V
I
O
= 4 mA; V
CC
= 1.65 V
I
O
= 8 mA; V
CC
= 2.3 V
I
O
= 12 mA; V
CC
= 2.7 V
I
O
= 24 mA; V
CC
= 3.0 V
I
O
= 32 mA; V
CC
= 4.5 V
I
I
I
OZ
I
OFF
I
CC
I
CC
C
I
74LVC1G38
Conditions
Min
Typ
Max
-
-
-
-
0.7
0.8
0.3
V
CC
-
0.1
0.45
0.3
0.4
0.55
0.55
5
10
10
10
500
-
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A
A
A
pF
0.65
V
CC
-
1.7
2.0
0.7
V
CC
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.1
5
2.5
0.35
V
CC
V
input leakage current
OFF-state output current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
V
I
= V
IH
or V
IL
; V
O
= V
CC
or GND;
V
CC
= 5.5 V
V
I
= 5.5 V or GND;
V
CC
= 1.65 V to 5.5 V; I
O
= 0 A
V
I
= V
CC
0.6 V; I
O
= 0 A;
V
CC
= 2.3 V to 5.5 V; per pin
power-off leakage current V
I
or V
O
= 5.5 V; V
CC
= 0 V
supply current
additional supply current
input capacitance
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 7 — 4 October 2012
5 of 19
嵌入式系统
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