Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-
sistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
1
2
3
MUN5311DW1T1
Series
6
5
4
SOT-363
CASE 419B STYLE1
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
6
5
4
and Q
2
, – minus sign for Q
1
(PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature
1. FR–4 @ Minimum Pad
Symbol Value
V
CBO
50
V
CEO
50
I
C
100
Unit
Vdc
Vdc
mAdc
Q
2
R
2
R
1
1
2
R
1
R
2
Q
1
3
Symbol
P
D
Max
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
Unit
mW
mW/°C
°C/W
MARKING DIAGRAM
6
5
4
XX
1
2
3
R
θJA
670 (Note 1.)
490 (Note 2.)
xx = Device Marking
=
(See Page 2)
Symbol
P
D
Max
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
–55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
R
θJA
R
θJL
T
J
, T
stg
2. FR–4 @ 1.0 x 1.0 inch Pad
MUN5311dw–1/13
MUN5311DW1T1
DEVICE MARKING AND RESISTOR VALUES
Device
Package
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1 (Note 3.)
MUN5316DW1T1 (Note 3.)
MUN5330DW1T1 (Note 3.)
MUN5331DW1T1 (Note 3.)
MUN5332DW1T1 (Note 3.)
MUN5333DW1T1 (Note 3.)
MUN5334DW1T1 (Note 3.)
MUN5335DW1T1 (Note 3.)
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
SOT–363
Series
Marking
11
12
13
14
15
16
30
31
32
33
34
35
R
1
(K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
R
2
(K)
10
22
47
47
8 8
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
1.0
2.2
4.7
47
47
47
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, – minus sign for Q
1
(PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
–
–
100
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
–
–
500
I
EBO
–
–
0.5
Emitter-Base Cutoff Current
MUN5311DW1T1
–
–
0.2
(V
EB
= 6.0 V, I
C
= 0)
MUN5312DW1T1
–
–
0.1
MUN5313DW1T1
–
–
0.2
MUN5314DW1T1
–
–
0.9
MUN5315DW1T1
–
–
1.9
MUN5316DW1T1
–
–
4.3
MUN5330DW1T1
–
–
2.3
MUN5331DW1T1
–
–
1.5
MUN5332DW1T1
–
–
0.18
MUN5333DW1T1
–
–
0.13
MUN5334DW1T1
–
–
0.2
MUN5335DW1T1
Collector-Base Breakdown Voltage (I
C
=10
µA,
I
E
= 0)
V
(BR)CBO
50
–
–
Collector-Emitter Breakdown Voltage(Note 4.)(I
C
=2.0 mA,I
B
=0) V
(BR)CEO
50
–
–
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
MUN5311dw–2/13
MUN5311DW1T1
Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, – minus sign for Q
1
(PNP) omitted)
(Continued)
Characteristic
ON CHARACTERISTICS(Note
5.)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN5330DW1T1/MUN5331DW1T1
(I
C
= 10 mA, I
B
= 1 mA) MUN5315DW1T1/MUN5316DW1T1
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
Output Voltage (on)
(V
CC
= 5.0V, V
B
= 2.5V,R
L
= 1.0 kΩ) MUN5311DW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
(V
CC
=5.0V,V
B
=3.5 V, R
L
=1.0kΩ)
MUN5313DW1T1
Symbol
h
FE
Min
35
60
80
80
160
160
3.0
8.0
15
80
80
80
V
CE(sat)
–
Typ
60
100
140
140
350
350
5.0
15
30
200
150
140
–
Max
–
–
–
–
–
–
–
–
–
–
–
–
0.25
Unit
Vdc
V
OL
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
MUN5311dw–3/13
MUN5311DW1T1
ELECTRICAL CHARACTERISTICS
Series
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, – minus sign for Q
1
(PNP) omitted)
(Continued)
Characteristic
ON CHARACTERISTICS(Note
5.)
Output Voltage (off)
(V
CC
=5.0V, V
B
=0.5V, R
L
=1.0kΩ)
(V
CC
=5.0V, V
B
=0.050V, R
L
=1.0kΩ) MUN5330DW1T1
(V
CC
=5.0V, V
B
=0.25V, R
L
=1.0kΩ) MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
Input Resistor
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
Resistor Ratio
R
1
/ R
2
MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
5. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
300
Symbol
V
OH
Min
4.9
Typ
–
Max
–
Unit
Vdc
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
0.8
0.17
–
0.8
0.055
0.38
0.038
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
1.0
0.21
–
1.0
0.1
0.47
0.047
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
1.2
0.25
–
1.2
0.185
0.56
0.056
kΩ
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
–50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
MUN5311dw–4/13
MUN5311DW1T1
Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5311DW1T1 NPN TRANSISTOR
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
0.1
h
FE
, DC CURRENT GAIN (NORMALIZED)
1000
100
0.01
0.001
0
20
40
50
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
4
100
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
C ob CAPACITANCE (pF)
10
3
1
2
0.1
1
0.01
0
0
10
20
30
40
50
0.001
0
1
2
3
4
5
6
7
8
9
10
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
10
Figure 5. Output Current versus Input Voltage
V in , INPUT VOLTAGE (VOLTS)
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
MUN5311dw–5/13
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