Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com *
www.ssdi-power.com
SFT6650/3
10 AMP / 80 Volts
50 MHz
PNP POWER DARLINGTON
BIPOLAR TRANSISTOR
Features:
•
•
•
•
Low Saturation Voltage
Hermetically Sealed, Isolated Package
Direct Replacement for 2N6650
TX, TXV, S-Level Screening Available,
Equivalent to MIL-PRF-19500/527
DESIGNER’S DATA SHEET
TO-3
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continuous Collector Current
Maximum Base Current
Power Dissipation
Operating & Storage Temperature
Maximum Thermal Resistance
Junction to Case
TO-3
.450
.250
.135
MAX
Ø.875 MAX
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
@ T
A
= 25ºC
@ T
C
= 25ºC
Value
80
80
5
10
0.25
5
85
-65 to +175
1.76
Units
Volts
Volts
Volts
Amps
Amps
W
ºC
ºC/W
P
D1
P
D2
Top & Tstg
R
θJC
2x .312
MIN
2x .043
.038
SEATING PLANE
1
2x Ø.165
.151
.525 MAX
.675
.655
2x R.188 MAX
2
.440
.420
NOTES:
2x .225
.205
1
1
THIS DIMENSION SHALL BE MEASURED
AT POINTS .050 - .055" BELOW THE
SEATING PLANE. WHEN GAGE IS NOT
USED, MEASUREMENT WILL BE MADE AT
SEATING PLANE.
THIS OUTLINE DOES NOT MEET THE
MINIMUM CRITERIA ESTABLISHED
BY JS-10 FOR REGISTRATION.
1.197
1.177
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0089A
DOC
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com *
www.ssdi-power.com
SFT6650/3
Symbol
I
C
= 200mA
I
C
= 200 mA; R
BB
= 100
Ω
V
CB
= 80 V
V
CE
= 80 V
V
CE
= 80 V, V
BE
= 1.5 V
V
EB
= 5.0 V
V
CE
= 3V, I
C
= 1 A
V
CE
= 3V, I
C
= 5 A
V
CE
= 3V, I
C
= 10 A
BV
CEO
BV
CER
I
CBO
I
CEO
I
CEX
I
EBO
H
FE1
H
FE2
H
FE3
Electrical Characteristics
4/
Collector to Emitter Sustaining Voltage
Collector – Emitter Breakdown Voltage
Collector Base Cutoff Current
Collector Emitter Cutoff Current
Collector Emitter Cutoff Current
Emitter Base Cutoff Current
DC Forward Current Transfer Ratio
*
Min
80
80
––
––
––
––
300
1000
100
––
––
––
––
50
––
––
Typ
––
––
––
0.001
––
0.001
Max Units
––
––
1.0
1.0
0.3
10
V
Volts
mA
mA
mA
mA
7,000 ––
9,000 20,000
1500
––
1.4
2.2
2.0
2.8
350
100
0.5
2.0
2.0
3.0
2.8
4.5
400
300
2.5
10
pF
µs
V
Collector to Emitter Saturation Voltage
I
C
= 5 A, I
B
= 10 mA
V
CE(sat)1
I
C
= 10 A, I
B
= 100 mA
V
CE(sat)2
Base to Emitter Voltage
Frequency Transition
(Small Signal Current Gain) @ f= 1 MHz
Output Capacitance
Switching characteristics
Safe Operating Area
T
C
= 25ºC, 1 cycle, 1 sec
I
C
= 5 A, V
CE
= 3V
I
C
= 10 A, V
CE
= 3V
V
CE
=5V, I
C
= 1 A, f= 1 MHz
V
CB
= 10V, f = 1MHz
V
CC
= 30V, I
C
= 5 A,
I
B1
=I
B2
= 20 mA
V
CE
= 8.5V, I
C
= 10 A
V
CE
= 25V, I
C
= 3.4 A
V
CE
= 80V, I
C
= 0.14 A
V
BE(on)1
V
BE(on)2
h
fe
C
obo
t
on
t
off
SOA1
SOA2
SOA3
V
NOTES:
* Pulse Test: Pulse Width = 300
µsec,
Duty Cycle = 2%.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25
o
C.
Available Part Numbers:
Consult Factory
Package
TO-3
PIN ASSIGNMENT
Collector
Emitter
Case
Pin 2
Base
Pin 1
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0089A
DOC
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