Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature .....................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) ................................+300 °C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
IN
= +5V for MAX4923/MAX4924/MAX4925, V
IN
= +4V for MAX4926, C
GATE
= 500pF to IN, T
A
= -40°C to +85°C, unless otherwise
noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Input Voltage Range
SYMBOL
V
IN
MAX4923
Overvoltage Lockout Level
OVLO
V
IN
rising
MAX4924
MAX4925
MAX4926
MAX4923
Overvoltage Lockout Hysteresis
MAX4924
MAX4925
MAX4926
Undervoltage Lockout Level
Undervoltage Lockout Hysteresis
IN Supply Current
GATE Voltage High
GATE Pulldown Current
FLAG Low Voltage
FLAG Leakage Current
TIMING CHARACTERISTICS
Debounce Time
t
DEB
V
UVLO
< V
IN
< V
OVLO,
time for GATE to go
low (Figure 1)
V
GATE
= 5V to 0.5V
(MAX4923/MAX4924/MAX4925) or
V
GATE
= 4V to 0.5V (MAX4926) (Figure 1)
V
IN
rising at 1V/µs from 5V to 8V
(MAX4923/MAX4924/MAX4925) or from 4V
to 7V (MAX4926) to V
GATE
= V
IN
-0.5V
(Figure 1)
V
IN
rising at 1V µs from 5V to 8V
(MAX4923/MAX4924/MAX4925) or from 4V
to 7V (MAX4926), to V
FLAG
= 2.4V,
R
FLAG
= 10kΩ to 3V (Figure 1)
10
20
34
ms
I
IN
V
OH
I
PD
V
OL
I
LKG
MAX4923/MAX4924/MAX4925
MAX4926
V
IN
> 8V, I
SOURCE
= 0.1mA
V
GATE
= V
IN
I
SINK
= 1mA
V
FLAG
= 5.5V
-1
V
IN
-
0.2
6.5
12
0.4
+1
UVLO
V
IN
falling
2.378
CONDITIONS
MIN
1.8
7.00
6.00
5.50
4.35
7.18
6.16
5.65
4.46
65
55
50
40
2.439
20
14
13
25
23
2.500
V
mV
µA
V
mA
V
µA
mV
TYP
MAX
28.0
7.36
6.31
5.79
4.57
V
UNITS
V
Gate Turn-on Time
t
GON
0.6
µs
Gate Turn-Off Time
t
GOFF
5
20
µs
Flag Assertion Delay
t
FLAG
4.5
µs
Note 1:
All devices are 100% tested at +25°C. Electrical limits across the full temperature range are guaranteed by design and characterization.
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