NBB-500Cas-
cadable
Broadband
GaAs MMIC
Amplifier DC to
4GHz
NBB-500
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 4GHz
RoHS Compliant & Pb-Free Product
Package Style: Micro-X, 4-Pin, Ceramic
Features
Reliable, Low-Cost HBT
Design
19.0dB Gain, +12.3dBm
P1dB@2GHz
High P1dB of
+14.0dBm@6.0GHz
Single Power Supply Opera-
tion
50Ω I/O Matched for High
Freq. Use
GND
4
MARKING - N5
RF IN 1
3 RF OUT
2
GND
Applications
Narrow and Broadband Com-
mercial and Military Radio
Designs
Linear and Saturated Amplifi-
ers
Gain Stage or Driver Amplifi-
ers for MWRadio/Optical
Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cel-
lular/DWDM)
Functional Block Diagram
Product Description
The NBB-500 cascadable broadband InGaP/GaAs MMIC amplifier is a
low-cost, high-performance solution for general purpose RF and micro-
wave amplification needs. This 50Ω gain block is based on a reliable HBT
proprietary MMIC design, providing unsurpassed performance for small-
signal applications. Designed with an external bias resistor, the NBB-500
provides flexibility and stability. The NBB-500 is packaged in a low-cost,
surface-mount ceramic package, providing ease of assembly for high-vol-
ume tape-and-reel requirements. It is available in either packaged or chip
(NBB-500-D) form, where its gold metallization is ideal for hybrid circuit
designs.
Ordering Information
NBB-500Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
NBB-500
NBB-500-T1
NBB-500-D
NBB-500-E
NBB-X-K1
Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz
Tape & Reel, 1000 Pieces
NBB-500 Chip Form (100 pieces minimum order)
Fully Assembled Evaluation Board
Extended Frequency InGaP Amp Designer’s Tool Kit
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A9 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 12
NBB-500
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Rating
+20
300
70
200
-45 to +85
-65 to +150
Unit
dBm
mW
mA
°C
°C
°C
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
Exceeding any one or a combination of these limits may cause permanent
damage.
Parameter
Overall
Small Signal Power Gain, S21
Min.
19.0
16.0
Specification
Typ.
20.5
19.5
18.5
±0.8
1.70:1
1.45:1
1.65:1
Max.
Unit
dB
dB
dB
dB
Condition
V
D
=+3.9V, I
CC
=35mA, Z
0
=50Ω, T
A
=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 2.0GHz
f=2.0GHz to 4.0GHz
f=0.1GHz to 3.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
Gain Flatness, GF
Input and Output VSWR
Bandwidth, BW
Output Power @
-1dB Compression, P1dB
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
D
Gain Temperature Coefficient,
δG
T
/δT
3.6
4.2
12.3
14.0
3.2
+26.5
-17.0
3.9
-0.0015
4.2
GHz
dBm
dBm
dB
dBm
dB
V
dB/°C
BW3 (3dB)
f=2.0GHz
f=6.0GHz
f=3.0GHz
f=2.0GHz
f=0.1GHz to 10.0GHz
MTTF versus Temperature
@ I
CC
=35mA
Case Temperature
Junction Temperature
MTTF
85
120
>1,000,000
256
°C
°C
hours
°C/W
Thermal Resistance
θ
JC
J
T
–
T
CASE
-------------------------- =
θ
JC
( °C ⁄
Watt
)
-
V
D
⋅
I
CC
2 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A9 DS070327
NBB-500
Pin
1
Function
RF IN
Description
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor,
suitable for the frequency of operation, should be used in most applica-
tions. DC coupling of the input is not allowed, because this will override the
internal feedback loop and cause temperature instability.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V
CC
. The resistor is selected to set the DC
current into this pin to a desired level. The resistor value is determined by
the following equation:
Interface Schematic
2
3
GND
RF OUT
RF OUT
(
V
CC
–
V
DEVICE
)
-
R
= ------------------------------------------
I
CC
Care should also be taken in the resistor selection to ensure that the cur-
rent into the part never exceeds maximum datasheet operating current
over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply near
5.0V is available, to provide DC feedback to prevent thermal runaway.
Because DC is present on this pin, a DC blocking capacitor, suitable for the
frequency of operation, should be used in most applications. The supply
side of the bias network should also be well bypassed.
RF IN
4
GND
Same as pin 2.
Package Drawing
45°
0.055
(1.40)
UNITS:
Inches
(mm)
N5
0.040
(1.02)
0.070
(1.78)
0.020
0.200 sq.
(5.08)
0.005
(0.13)
Rev A9 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 12
NBB-500
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
V
CC
R
CC
4
In
1
C block
2
3
L choke
(optional)
Out
C block
V
DEVICE
V
D
= 3.9 V
Recommended Bias Resistor Values
Supply Voltage, V
CC
(V)
Bias Resistor, R
CC
(Ω)
5
31
8
117
10
174
12
231
15
317
20
460
4 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A9 DS070327
NBB-500
Chip Outline Drawing - NBB-500-D
Chip Dimensions: 0.017” x 0.017” x 0.004”
UNITS:
Inches
(mm)
Back of chip is ground.
OUTPUT
INPUT
0.017 ± 0.001
(0.44 ± 0.03)
GND
VIA
0.017 ± 0.001
(0.44 ± 0.03)
0.004 ± 0.001
(0.10 ± 0.03)
Sales Criteria - Unpackaged Die
Die Sales Information
• All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be nego-
tiated on a case-by-case basis.
• Segmented die are selected for customer shipment in accordance with RFMD Document #6000152 - Die Product
Final Visual Inspection Criteria
1
.
• Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrier is allow-
able.
Die Packaging
• All die are packaged in GelPak ESD protective containers with the following specification:
O.D.=2"X2", Capacity=400 Die (20X20 segments), Retention Level=High(X0).
• GelPak ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is
opened the GelPak/s should be stored in a controlled nitrogen environment. Do not press on the cover of a closed
GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers.
• Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit
2
.
Package Storage
• Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.
• Precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit
2
.
Die Handling
• Proper ESD precautions must be taken when handling die material.
• Die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of twee-
zers. Do not touch die with any part of the body.
• When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive force
may damage GaAs devices.
Rev A9 DS070327
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 12
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
