DC COMPONENTS CO., LTD.
R
2SB1426
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for DC-to-DC converter applications.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
.500
Min
(12.70)
o
o
Absolute Maximum Ratings
(T
A
=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
C)
Rating
-20
-20
-6
-3
750
+150
-55 to +150
Unit
V
V
V
A
mW
o
o
Symbol
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.022(0.56)
.014(0.36)
3 2 1
.148(3.76)
.132(3.36)
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
C
Electrical Characteristics
o
Characteristic
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
-20
-20
-6
-
-
-
82
-
-
2%
Typ
-
-
-
-
-
-
-
240
35
Max
-
-
-
-100
-100
-500
390
-
-
Unit
V
V
V
nA
nA
mV
-
MHz
pF
Test Conditions
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CB
=-20V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-2A, I
B
=-0.1A
I
C
=-100mA, V
CE
=-2V
I
C
=-500mA, V
CE
=-2V, f=100MHz
V
CB
=-10V, f=1MHz, I
E
=0
V
CE(sat)
h
FE
f
T
C
ob
380µs, Duty Cycle
Classification of h
FE
Rank
Range
P
82~180
Q
120~270
R
180~390
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