ZBT SRAM, 512KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-026AA, BGA-119
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | BGA |
| 包装说明 | BGA, BGA119,7X17,50 |
| 针数 | 119 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 8 ns |
| 其他特性 | FLOW-THROUGH ARCHITECTURE |
| 最大时钟频率 (fCLK) | 95 MHz |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PBGA-B119 |
| JESD-609代码 | e0 |
| 长度 | 22 mm |
| 内存密度 | 9437184 bit |
| 内存集成电路类型 | ZBT SRAM |
| 内存宽度 | 18 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端子数量 | 119 |
| 字数 | 524288 words |
| 字数代码 | 512000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 512KX18 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | BGA |
| 封装等效代码 | BGA119,7X17,50 |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 225 |
| 电源 | 3.3 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 2.36 mm |
| 最大待机电流 | 0.04 A |
| 最小待机电流 | 3.14 V |
| 最大压摆率 | 0.25 mA |
| 最大供电电压 (Vsup) | 3.465 V |
| 最小供电电压 (Vsup) | 3.135 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn63Pb37) |
| 端子形式 | BALL |
| 端子节距 | 1.27 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 20 |
| 宽度 | 14 mm |
| Base Number Matches | 1 |
| IDT71V65903S80BG8 | IDT71V65703S85BG8 | IDT71V65903S75PFI8 | IDT71V65703S80BG8 | IDT71V65703S75BG8 | IDT71V65903S75PF8 | IDT71V65903S75BG8 | |
|---|---|---|---|---|---|---|---|
| 描述 | ZBT SRAM, 512KX18, 8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-026AA, BGA-119 | ZBT SRAM, 256KX36, 8.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-026AA, BGA-119 | ZBT SRAM, 512KX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, MO-136DJ, PLASTIC, TQFP-100 | ZBT SRAM, 256KX36, 8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-026AA, BGA-119 | ZBT SRAM, 256KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-026AA, BGA-119 | ZBT SRAM, 512KX18, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, MO-136DJ, PLASTIC, TQFP-100 | ZBT SRAM, 512KX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-026AA, BGA-119 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | BGA | BGA | QFP | BGA | BGA | QFP | BGA |
| 包装说明 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | 14 X 20 MM, 1.40 MM HEIGHT, MO-136DJ, PLASTIC, TQFP-100 | BGA, BGA119,7X17,50 | BGA, BGA119,7X17,50 | 14 X 20 MM, 1.40 MM HEIGHT, MO-136DJ, PLASTIC, TQFP-100 | 14 X 22 MM, PLASTIC, MS-026AA, BGA-119 |
| 针数 | 119 | 119 | 100 | 119 | 119 | 100 | 119 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 8 ns | 8.5 ns | 7.5 ns | 8 ns | 7.5 ns | 7.5 ns | 7.5 ns |
| 其他特性 | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE | FLOW-THROUGH ARCHITECTURE |
| 最大时钟频率 (fCLK) | 95 MHz | 90 MHz | 100 MHz | 95 MHz | 100 MHz | 100 MHz | 100 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PBGA-B119 | R-PBGA-B119 | R-PQFP-G100 | R-PBGA-B119 | R-PBGA-B119 | R-PQFP-G100 | R-PBGA-B119 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 22 mm | 22 mm | 20 mm | 22 mm | 22 mm | 20 mm | 22 mm |
| 内存密度 | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bit | 9437184 bit |
| 内存集成电路类型 | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM | ZBT SRAM |
| 内存宽度 | 18 | 36 | 18 | 36 | 36 | 18 | 18 |
| 湿度敏感等级 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 119 | 119 | 100 | 119 | 119 | 100 | 119 |
| 字数 | 524288 words | 262144 words | 524288 words | 262144 words | 262144 words | 524288 words | 524288 words |
| 字数代码 | 512000 | 256000 | 512000 | 256000 | 256000 | 512000 | 512000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 85 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 512KX18 | 256KX36 | 512KX18 | 256KX36 | 256KX36 | 512KX18 | 512KX18 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | BGA | BGA | LQFP | BGA | BGA | LQFP | BGA |
| 封装等效代码 | BGA119,7X17,50 | BGA119,7X17,50 | QFP100,.63X.87 | BGA119,7X17,50 | BGA119,7X17,50 | QFP100,.63X.87 | BGA119,7X17,50 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY | GRID ARRAY | FLATPACK, LOW PROFILE | GRID ARRAY | GRID ARRAY | FLATPACK, LOW PROFILE | GRID ARRAY |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 225 | 225 | 240 | 225 | 225 | 240 | NOT SPECIFIED |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 2.36 mm | 2.36 mm | 1.6 mm | 2.36 mm | 2.36 mm | 1.6 mm | 2.36 mm |
| 最大待机电流 | 0.04 A | 0.04 A | 0.06 A | 0.04 A | 0.04 A | 0.04 A | 0.04 A |
| 最小待机电流 | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V |
| 最大压摆率 | 0.25 mA | 0.225 mA | 0.295 mA | 0.25 mA | 0.275 mA | 0.275 mA | 0.275 mA |
| 最大供电电压 (Vsup) | 3.465 V | 3.465 V | 3.465 V | 3.465 V | 3.465 V | 3.465 V | 3.465 V |
| 最小供电电压 (Vsup) | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn63Pb37) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn63Pb37) |
| 端子形式 | BALL | BALL | GULL WING | BALL | BALL | GULL WING | BALL |
| 端子节距 | 1.27 mm | 1.27 mm | 0.65 mm | 1.27 mm | 1.27 mm | 0.65 mm | 1.27 mm |
| 端子位置 | BOTTOM | BOTTOM | QUAD | BOTTOM | BOTTOM | QUAD | BOTTOM |
| 处于峰值回流温度下的最长时间 | 20 | 20 | 20 | 20 | 20 | 20 | NOT SPECIFIED |
| 宽度 | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm |
| 是否无铅 | 含铅 | 含铅 | - | 含铅 | 含铅 | - | - |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - | - |
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