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70V639S15BCGI: 产品描述Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256; 产品类别存储存储; 文件大小201KB，共24页; 制造商IDT (Integrated Device Technology); 标准

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70V639S15BCGI概述

Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256

70V639S15BCGI规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	BGA
包装说明	17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256
针数	256
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	15 ns
I/O 类型	COMMON
JESD-30 代码	S-PBGA-B256
JESD-609代码	e1
长度	17 mm
内存密度	2359296 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	256
字数	131072 words
字数代码	128000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	128KX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LBGA
封装等效代码	BGA256,16X16,40
封装形状	SQUARE
封装形式	GRID ARRAY, LOW PROFILE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
电源	2.5/3.3,3.3 V
认证状态	Not Qualified
座面最大高度	1.7 mm
最大待机电流	0.015 A
最小待机电流	3.15 V
最大压摆率	0.49 mA
最大供电电压 (Vsup)	3.45 V
最小供电电压 (Vsup)	3.15 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL
端子节距	1 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	30
宽度	17 mm
Base Number Matches	1

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HIGH-SPEED 3.3V

128K x 18 ASYNCHRONOUS

DUAL-PORT STATIC RAM

Features

◆

IDT70V639S

LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018

◆

Functional Block Diagram

True Dual-Port memory cells which allow simultaneous

access of the same memory location

High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 12/15ns (max.)

Dual chip enables allow for depth expansion without

external logic

IDT70V639 easily expands data bus width to 36 bits or

more using the Master/Slave select when cascading more

than one device

M/S = V

for

BUSY

output flag on Master,

M/S = V

for

BUSY

input on Slave

Busy and Interrupt Flags

On-chip port arbitration logic

Full on-chip hardware support of semaphore signaling

between ports

◆

Fully asynchronous operation from either port

Separate byte controls for multiplexed bus and bus

matching compatibility

Supports JTAG features compliant to IEEE 1149.1

– Due to limited pin count, JTAG is not supported on the

128-pin TQFP package.

LVTTL-compatible, single 3.3V (±150mV) power supply for

core

LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

Available in a 128-pin Thin Quad Flatpack, 208-ball fine

pitch Ball Grid Array, and 256-ball Ball Grid Array

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

Green parts available, see ordering information

Dout0-8_L

Dout9-17_L

Dout0-8_R

Dout9-17_R

128K x 18

MEMORY

ARRAY

I/O

- I/O

17L

Din_L

Din_R

I/O

- I/O

17R

16L

Address

Decoder

ADDR_L

ADDR_R

Address

Decoder

16R

R/W

BUSY

SEM

INT

ARBITRATION

INTERRUPT

SEMAPHORE

LOGIC

R/W

BUSY

M/S

SEM

INT

TDI

TDO

JTAG

TMS

TCK

TRST

5621 drw 01

NOTES:

BUSY

is an input as a Slave (M/S=V

) and an output when it is a Master (M/S=V

BUSY

and

INT

are non-tri-state totem-pole outputs (push-pull).

JUNE 2018

DSC-5621/8

70V639S15BCGI相似产品对比

	70V639S15BCGI	70V639S15BCG	70V639S15BCI8	70V639S15BCI	70V639S15PRFG	70V639S15PRFGI	70V639S10BFG	70V639S15BFGI	70V639S15BFG
描述	Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256	Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256	Application Specific SRAM, 128KX18, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256	Application Specific SRAM, 128KX18, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256	Dual-Port SRAM, 128KX18, 15ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, GREEN, TQFP-128	Dual-Port SRAM, 128KX18, 15ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, GREEN, TQFP-128	Dual-Port SRAM, 128KX18, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208	Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208	Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208
是否无铅	不含铅	不含铅	含铅	含铅	不含铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	不符合	不符合	符合	符合	符合	符合	符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
包装说明	17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256	LBGA, BGA256,16X16,40	17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256	17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256	LFQFP, QFP128,.63X.87,20	LFQFP, QFP128,.63X.87,20	LFBGA, BGA208,17X17,32	LFBGA, BGA208,17X17,32	LFBGA, BGA208,17X17,32
Reach Compliance Code	compliant	compliant	not_compliant	not_compliant	compliant	compliant	compliant	compliant	compliant
最长访问时间	15 ns	15 ns	15 ns	15 ns	15 ns	15 ns	10 ns	15 ns	15 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PBGA-B256	S-PBGA-B256	S-PBGA-B256	S-PBGA-B256	R-PQFP-G128	R-PQFP-G128	S-PBGA-B208	S-PBGA-B208	S-PBGA-B208
JESD-609代码	e1	e1	e0	e0	e3	e3	e1	e1	e1
内存密度	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	APPLICATION SPECIFIC SRAM	APPLICATION SPECIFIC SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	18	18	18	18	18	18	18	18	18
湿度敏感等级	3	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1	1
端口数量	2	2	2	2	2	2	2	2	2
端子数量	256	256	256	256	128	128	208	208	208
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	70 °C	85 °C	85 °C	70 °C	85 °C	70 °C	85 °C	70 °C
最低工作温度	-40 °C	-	-40 °C	-40 °C	-	-40 °C	-	-40 °C	-
组织	128KX18	128KX18	128KX18	128KX18	128KX18	128KX18	128KX18	128KX18	128KX18
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LBGA	LBGA	BGA	BGA	LFQFP	LFQFP	LFBGA	LFBGA	LFBGA
封装等效代码	BGA256,16X16,40	BGA256,16X16,40	BGA256,16X16,40	BGA256,16X16,40	QFP128,.63X.87,20	QFP128,.63X.87,20	BGA208,17X17,32	BGA208,17X17,32	BGA208,17X17,32
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	RECTANGULAR	RECTANGULAR	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY	GRID ARRAY	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	225	225	260	260	260	260	260
电源	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大待机电流	0.015 A	0.015 A	0.015 A	0.015 A	0.015 A	0.015 A	0.015 A	0.015 A	0.015 A
最小待机电流	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V
最大压摆率	0.49 mA	0.44 mA	0.49 mA	0.49 mA	0.44 mA	0.49 mA	0.5 mA	0.49 mA	0.44 mA
最大供电电压 (Vsup)	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V
最小供电电压 (Vsup)	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
端子面层	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn63Pb37)	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	BALL	BALL	BALL	BALL	GULL WING	GULL WING	BALL	BALL	BALL
端子节距	1 mm	1 mm	1 mm	1 mm	0.5 mm	0.5 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	QUAD	QUAD	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	30	30	20	20	30	30	30	30	30
Base Number Matches	1	1	1	1	1	1	1	1	1
零件包装代码	BGA	BGA	-	-	QFP	QFP	BGA	BGA	BGA
针数	256	256	-	-	128	128	208	208	208
ECCN代码	3A991.B.2.A	3A991	-	-	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991	3A991.B.2.A
长度	17 mm	17 mm	-	-	20 mm	20 mm	15 mm	15 mm	15 mm
座面最大高度	1.7 mm	1.7 mm	-	-	1.6 mm	1.6 mm	1.7 mm	1.7 mm	1.7 mm
宽度	17 mm	17 mm	-	-	14 mm	14 mm	15 mm	15 mm	15 mm

70V639S15BCGI

70V639S15BCGI概述

70V639S15BCGI规格参数

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70V639S15BCGI相似产品对比

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