BYP57 / BYP58
35A Silicon Power Rectifier Diode
Part no.
Description
The BYP57/58 are plastic sealed 35A- diodes,
which are available in different reverse voltage
classes up to 800V.
The diodes can be delivered with limited forward
voltage
and reverse current differences for
parallel connecting in rectifier stacks and back-
off-diodes
Features
•
•
•
•
Applications
•
•
•
•
Forward current 35A
Reverse voltage 75V – 800V
Hermetic press-fit package
Available in different modifications of the
package
Power supplies
Rectifier diode in car generators
Rectifier bridges/stacks
Back-off-diodes
Pinout details
BYP57:
1 - cathode
2 - anode
BYP58:
1 - anode
2 - cathode
Typical application circuit
Six pulse
bridge
connection
~
~
~
1
3 x BYP57-1200
3 x BYP58-1200
2
+
-
Ordering information
Device
BYP57-75; …; BYP57-800
BYP58-75; …; BYP58-800
Quantity per box
400
400
Options
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BYP57- black, BYP58 – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BYP57………………………………... diode type
400………………………………….. repetitive peak reverse voltage V
RRM
(in V) 400
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
1
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BYP57 / BYP58
Absolute maximum ratings
(at T
amb
= 25°C unless otherwise stated)
Parameter
BYP57-75
BYP57-100
BYP57-150
BYP57-200
Repetitive
peak
reverse
voltage
BYP57-300
BYP57-400
BYP57-500
BYP57-600
BYP57-700
BYP57-800
BYP58-75
BYP58-100
BYP58-150
BYP58-200
BYP58-300
BYP58-400
BYP58-500
BYP58-600
BYP58-700
BYP58-800
I
FAV
I
FSM
500
1800
Maximum rated value
∫i²dt
1250
Repetitive peak forward current
Effective forward current
Junction temperature
Storage temperature range
I
FRM
=π*I
FAV
I
FRMS
T
Jmax
T
stg
110
55
175
- 50 to + 140
A
A
°C
°C
A²s
V
RRM
Symbol
75
100
150
200
300
400
500
600
700
800
35
600
Surge forward current
A
A
half-sine wave,
≤
10 ms
T
J
= 175°C half-sine
wave,
≤
10 ms
half-sine wave,
≤
10 ms
T
J
= 175°C half-sine
wave,
≤
10 ms
f = >15 Hz
V
T
c
= 140°C
Unit
Test condition
Forward current, arithmetic value
Issue 4 – September 2006
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2
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BYP57 / BYP58
Thermal resistance
Parameter
Junction to case
Symbol
R
θJC
Value
1.0
Unit
°C/W
Thermal characteristics
40
30
I
F
(A)
20
10
0
-50
-25
0
25
50
T
C
(°C)
75
100
108°C
140°C
125
150
Forward current derating diagram
Electrical characteristics
(at T
amb
= 25°C unless otherwise stated)
40
35
30
25
20
15
10
5
0
0,75
I
F
(A)
0,8
0,85
0,9
V
F
(V)
0,95
1
1,05
Forward voltage characteristic
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
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BYP57 / BYP58
Electrical characteristics
(at T
amb
= 25°C unless otherwise stated)
Parameter
Forward
voltage
BYP57-75...800
BYP58-75...800
Symbol
V
F
Min.
-
Typ.
1.0
Max.
1.1
Unit
V
Test contitions
I
F
= 35 A,
measuring time
10ms (half-sine
wave)
I
F
= 50 A,
Forward
voltage
BYP57-75...800
(information BYP58-75...800
values)
BYP57-75...150
BYP58-75...150
BYP57-200...800
Reverse
BYP58-200...800
current
BYP57-75...400
BYP58-75...400
BYP57-500...800
BYP58-500...800
Threshold voltage (information
value)
Slope resistance (information
value)
V
F
-
-
-
-
-
-
-
0.66
5.75
1.2
3
V
I
RRM
-
-
I
RRM
-
V
(FO)
r
F
-
-
0.1
-
-
1.5
0.25
mA
T
J
= 140°C, at
V
RRM
mA
at V
RRM
V
mΩ
T
J
= 175°C
T
J
= 175°C
Options: Electrical characteristics for parallel connecting
(at T
amb
= 25°C unless otherwise stated)
Option
1
Parameter
Forward voltage
difference in one
category of forward
voltage
Reverse current in one
category of forward
voltage (only for
BYP57-300…800 and
BYP58-300…800)
Symbol
∆V
F
Min.
-
Typ.
-
Max.
0.05
Unit
V
Test contitions
I
F
= 35 A, measuring
time 10ms (half-sine
wave)
at V
RRM
2
I
R
-
-
0.01
mA
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
4
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BYP57 / BYP58
Packaging details
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM
A
A1
A2
D
D1
D2
D3
MIN
18,00
5,90
2,10
15,50
12,72
11,50
1,33
Millimeters
TYP
18,50
6,10
2,30
15,70
12,77
11,70
1,36
Inches
TYP
0,728
0,240
0,091
0,618
0,503
0,461
0,054
MAX
19,00
6,30
2,50
15,90
12,82
11,90
1,39
MIN
0,709
0,232
0,083
0,610
0,501
0,453
0,052
MAX
0,748
0,248
0,098
0,626
0,505
0,469
0,055
Europe
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Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
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Hing Fong Road, Kwai Fong
Hong Kong
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Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit
www.zetex.com/offices
Zetex products are distributed worldwide. For details, see
www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 4 – September 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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