6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
DESCRIPTION
The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W,
consist of a gallium arsenide infrared emitting diode driving a
silicon phototransistor in a 6-pin dual in-line package.
PACKAGE DIMENSIONS
FEATURES
• Input/Output pin distance 10.16 mm
• UL recognized (File # E90700)
0.270 (6.86)
0.240 (6.10)
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
SCHEMATIC
1
NC
6
1
6
1
SEATING PLANE
0.350 (8.89)
0.330 (8.38)
0.070 (1.78)
0.045 (1.14)
6
0.200 (5.08)
0.115 (2.92)
2
5
2
5
0.154 (3.90)
0.100 (2.54)
0.004 (0.10)
MIN
0.016 (0.40)
0.008 (0.20)
3
NC
CNX82A.W
SL5582.W
4
3
NC
CNX83A.W
SL5583.W
4
0.022 (0.56)
0.016 (0.41)
0.100 (2.54) TYP
0° to 15°
0.400 (10.16)
TYP
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. NO CONNECTION
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
NOTE
All dimensions are in inches (millimeters)
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature
Total Device Power Dissipation @ T
A
= 25°C
EMITTER
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1µs pulse, 300pps)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
Collector-Base Voltage (CNX83A)
Emitter-Collector Voltage
Continuous Collector Current
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Symbol
T
STG
T
OPR
T
SOL
T
J
P
D
I
F
V
R
I
F
(pk)
P
D
V
CEO
V
CBO
V
ECO
I
C
P
D
Value
-55 to +150
-55 to +100
260 for 10 sec
125
250
100
5.0
3.0
140
1.33
50
70
7
100
150
2.0
Units
°C
°C
°C
°C
mW
mA
V
A
mW
mW/°C
V
V
V
mA
mW
mW/°C
4/13/00
200024D
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Test Conditions
(I
F
= 10 mA)
(V
R
= 5.0 V)
(I
C
= 1.0 mA, I
F
= 0)
(I
C
= 100 µA, I
F
= 0)
(I
E
= 100 µA, I
F
= 0)
(V
CE
= 10 V, I
F
= 0)
(V
CE
= 10 V, I
F
= 0)
Collector-Emitter Dark Current
(T
A
= 70°C)
(V
CE
= 10 V, I
F
= 0)
(T
A
= 100°C)
Collector-Base Dark Current
Capacitance
Note
** Typical values at T
A
= 25°C
(V
CB
= 10 V)
(V
CE
= 0 V, f = 1 MHz)
I
CBO
C
CE
I
CEO
Symbol
V
F
I
R
BV
CEO
BV
CBO
BV
ECO
Device
ALL
ALL
ALL
CNX83A.W
SL5583.W
ALL
ALL
CNX82A.W
CNX83A.W
SL5582.W
SL5583.W
SL5582.W
SL5583.W
CNX83A.W
SL5583.W
ALL
8
50
70
7
Min
Typ**
1.2
0.001
100
120
10
0.001
0.5
0.050
10
0.5
50
20
nA
pF
µA
Max
1.50
10
Unit
V
µA
V
V
V
Call QT Optoelectronics for more information or the phone number of your nearest distributor.
United States 800-533-6786 • France 33 [0] 1.45.18.78.78 • Germany 49 [0] 89/96.30.51 • United Kingdom 44 [0] 1296 394499 • Asia/Pacific 603-7352417
4/13/00
200024D
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
TRANSFER CHARACTERISTICS
DC Characteristic
(T
A
= 25°C Unless otherwise specified.)
Test Conditions
(I
F
= 10 mA, V
CE
= 0.4 V)
Symbol
Device
ALL
CNX82A.W
(I
F
= 10 mA, V
CE
= 5 V)
CNX83A.W
SL5582.W
SL5583.W
Current Transfer Ratio,
Collector-Emitter
(I
F
= 10 mA, V
CE
= 5 V)
(T
A
= 100°C)
(I
F
= 1 mA, V
CE
= 5 V)
(I
F
= 2 mA, V
CE
= 5 V)
(I
F
= 2 mA, V
CE
= 5 V)
(T
A
= 100°C)
Saturation Voltage
(I
F
= 10 mA, I
C
= 4 mA)
(I
C
= 2 mA, V
CC
= 5 V, R
L
= 100
!)
Turn-on Time
(I
C
= 2 mA, V
CC
= 5 V, R
L
= 1 k!)
(I
F
= 16 mA, V
CC
= 5 V, R
L
= 1 k!)
(I
C
= 2 mA, V
CC
= 5 V, R
L
= 100
!)
Turn-off Time
(I
C
= 2 mA, V
CC
= 5 V, R
L
= 1 k!)
(I
F
= 16 mA, V
CC
= 5 V, R
L
= 1 k!)
t
off
t
on
V
CE(sat)
CTR
SL5582.W
SL5583.W
CNX82A.W
CNX83A.W
SL5582.W
SL5583.W
SL5582.W
SL5583.W
ALL
ALL
ALL
SL5582.W
SL5583.W
ALL
ALL
SL5582.W
SL5583.W
3
12
50
µs
Min
40
40
40
25
10
20
15
0.19
3
12
20
µs
0.4
V
250
320
320
100
Typ**
Max
Units
%
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
External air gap (clearance)
External tracking path (creepage)
Internal plastic gap (clearance)
Note
** Typical values at T
A
= 25°C
Test Conditions
(I
I-O
"#1
µA, 1 min.)
(V
I-O
= 500 VDC)
(V
I-O
=
$,
f = 1 MHz)
Symbol
V
ISO
R
ISO
C
ISO
9.6
8.0
1.0
Min
5300
10
11
0.5
Typ**
Max
Units
Vac(rms)
!
pf
mm
mm
mm
ORDERING INFORMATION
Order
Entry
Identifier
.300W
Option
300
Description
VDE 0884
4/13/00
200024D
6-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
CNX82A.W, CNX83A.W, SL5582.W & SL5583.W
TYPICAL CHARACTERISTICS
2
VF, FORWARD VOLTAGE (VOLTS)
PULSE ONLY
PULSE OR DC
IC, OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
1.8
NORMALIZED TO:
IF = 10 mA
1
1.6
1.4
TA = -55
˚
C
1.2
25
˚
C
100
˚
C
1
10
100
1000
IF, LED FORWARD CURRENT (mA)
0.1
1
0.01
0.5
1
2
5
10
20
50
IF, LED INPUT CURRENT (mA)
Figure 1. LED Forward Voltage versus Forward Current
Figure 2. Output Current versus Input Current
25
IC, COLLECTOR CURRENT (mA)
I
F
= 10 mA
20
IC, OUTPUT COLLECTOR CURRENT (NORMALIZED)
10
7
5
NORMALIZED TO TA = 25
˚
C
2
1
0.7
0.5
15
10
5
0.2
0.1
-60
-40
-20
0
20
40
60
80
100
0
0
1
2
3
4
5
6
7
8
9
10
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
TA, AMBIENT TEMPERATURE (
˚
C)
Figure 3. Collector Current versus
Collector-Emitter Voltage
Figure 4. Output Current versus Ambient Temperature
ICEO, COLLECTOR-EMITTER DARK CURRENT
(NORMALIZED)
1000
NORMALIZED TO:
VCE = 10 V
TA = 25
˚
C
20
18
16
C, CAPACITANCE (pF)
14
12
10
8
6
4
2
40
60
80
100
0
0.05
0.1
0.2
0.5
1
2
5
10
20
50
CCE
CLED
f = 1 MHz
100
10
VCE = 30 V
1
10V
0.1
0
20
TA, AMBIENT TEMPERATURE (
˚
C)
V, VOLTAGE (VOLTS)
Figure 5. Dark Current versus Ambient Temperature
Figure 6. Capacitance versus Voltage
4/13/00
200024D
Package Dimensions (Surface Mount)
Recommended Pad Layout for
Surface Mount Leadform
0.070 (1.78)
0.060 (1.52)
0.415 (10.54)
0.100 (2.54)
0.295 (7.49)
0.030 (0.76)
Note
All dimensions are in inches (millimeters)
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