EMX18 / UMX18N
Transistors
General purpose transistors
(dual transistors)
EMX18 / UMX18N
Features
1) Two 2SC5585 chips in a EMT or UMT package.
2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMX18
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : X18
1.3
0.65
0.7
0.9
0.2
(6)
1.25
0.15
The following characteristics apply to both Tr
1
and Tr
2.
2.1
0~0.1
0.1Min.
Each lead has same dimensions
Equivalent circuit
EMX18 / UMX18N
(3)
(2)
(1)
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : X18
Tr
1
Tr
2
(4)
(5)
(6)
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
15
12
6
500
1.0
150 (TOTAL)
150
−55
to
+150
Unit
V
V
V
mA
A
mW
˚C
˚C
∗
1
∗
1 120mW per element must not be exceeded.
(1)
2.0
(5)
(2)
Structure
Epitaxial planar type
NPN silicon transistor
(4)
0.65
(3)
UMX18N
0.5
0.5 0.5
1.0
1.6
Rev.A
1/3
EMX18 / UMX18N
Transistors
Electrical characteristics
(Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
15
12
6
−
−
−
270
−
−
−
−
−
90
−
−
−
−
0.1
0.1
250
680
V
V
V
µA
µA
mV
−
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=15V
V
EB
=6V
I
C
/I
B
=200mA/10mA
V
CE
=2V,
I
C
=10mA
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
f
T
Cob
−
−
320
7.5
−
−
MHz V
CE
=2V,
I
E
=−10mA,
f=100MHz
PF
V
CB
=10V,
I
E
=0A,
f=1MHz
Packaging specifications
Package
Code
Type
Taping
T2R
8000
TN
3000
Basic ordering
unit (pieces)
EMX18
UMX18N
Electrical characteristic curves
1000
COLLECTOR CURRENT : I
C
(mA)
V
CE
= 2V
1000
Ta = 125°C
V
CE
= 2V
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
1000
I
C
/I
B
= 20
500
DC CURRENT GAIN : h
FE
500
200
100
50
20
10
5
2
25°C
-40°C
500
200
100
50
20
10
5
2
1
200
100
50
25
°
C
Ta = 125°C
25°C
-40°C
10
5
2
Ta = 1
-40
°
C
20
25
°
C
1
0
0.5
1.0
1.5
1
1
2
5
10
20
50 100 200
500 1000
1
2
5
10
20
50 100 200
500 1000
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 DC current gain vs.
collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current (
Ι
)
Rev.A
2/3
EMX18 / UMX18N
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
Ta = 25°C
COLLECTOR SATURATION VOLTAGE : V
BE(sat)
(mV)
1000
500
200
100
50
20
10
5
2
1
10000
5000
2000
1000
I
C
/I
B
= 20
1000
V
CE
=
2V
Ta = 25°C
200
Pulsed
Ta = -40°C
25°C
125°C
500
100
f
T
(MH
Z
)
500
200
100
50
20
10
50
20
10
5
2
1
I
C
/I
B
= 50
20
10
1
2
5
10
20
50 100 200
500 1000
1
2
5
10
20
50 100 200
500 1000
1
2
5
10
20
50 100 200
500 1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.4 Collector-emitter saturation voltage
vs. collector current (
ΙΙ
)
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.6
Collector output capacitance
Emitter input capacitance
vs. base voltage
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
500
200
100
50
Cib
20
10
5
2
1
Cob
I
E
=
0A
f
=
1MHz
Ta = 25°C
0.1
0.2
0.5
1
2
5
10
20
50
100
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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