All Bond Pads = 0.004" Sq.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
g
fs
r
ds(on)
C
iss
C
rss
22
40
7
2.5
mS
Ω
pF
pF
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
5
–1
Min
– 20
Typ
– 25
– 10
– 100
90
– 5.5
Max
Unit
V
pA
mA
V
NJ72L Process
Test Conditions
I
G
= – 1 µA, V
DS
= ØV
V
GS
= – 15V, V
DS
= ØV
V
DS
= 15V, V
GS
= ØV
V
DS
= 15V, I
D
= 1 nA
V
DS
= 15V, V
GS
= ØV
I
D
= 1 mA, V
GS
= ØV
V
DS
= ØV, V
GS
= – 10V
V
DS
= ØV, V
GS
= – 10V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
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(972) 487-1287
FAX
(972) 276-3375
www.interfet.co
Drain to Source Voltage in Volts
Gate Source Cutoff Voltage in Volts
Drain Saturation Current as a Function of V
GS(OFF)
Drain Source (on) Resistance in
Ω
Drain Saturation Current in mA
100
80
60
40
20
80
70
60
50
40
30
20
10
0
–1
R
ds
as a Function of V
GS(OFF)
0
–1
–2
–3
–4
–5
–6
–2
–3
–4
–5
Drain Source Cutoff Voltage in Volts
Drain Source Cutoff Voltage in Volts
Input Capacitance as a Function of V
GS
15
13
V
DS
= Ø V
11
9
7
5
0
–4
–8
– 12
– 16
Gate Source Voltage in Volts
V
DS
= 5 V
V
DS
= 10 V
Feedback Capacitance in pF
Input Capacitance in pF
7
6
5
4
Feedback Capacitance as a Function of V
G
V
DS
= Ø V
V
DS
= 5 V
V
DS
= 10 V
3
2
0
–4
–8
– 12
Gate Source Voltage in Volts
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