S
ESIGN
NEW D CT
FOR
ENDED UTE PRODU
M
ECOM
BSTIT
Data Sheet
NOT R
LE SU , HFA3127
B
POSSI CA3127
®
CA3227
April 2002
FN1345.6
High-Frequency NPN Transistor Array For
Low-Power Applications at Frequencies
Up to 1.5GHz
The CA3227 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Each of the
transistors exhibits a value of f
T
in excess of 3GHz, making
them useful from DC to 1.5GHz. The monolithic construction
of these devices provides close electrical and thermal
matching of the five transistors.
Features
• Gain-Bandwidth Product (f
T
) . . . . . . . . . . . . . . . . . >3GHz
• Five Transistors on a Common Substrate
Applications
• VHF Amplifiers
• VHF Mixers
• Multifunction Combinations - RF/Mixer/Oscillator
• IF Converter
• IF Amplifiers
Ordering Information
PART
NUMBER
(BRAND)
CA3227M
(3227)
CA3227M96
(3227)
TEMP.
RANGE (
o
C)
-55 to 125
-55 to 125
PACKAGE
16 Ld SOIC
16 Ld SOIC Tape
and Reel
PKG. NO.
M16.15
M16.15
• Sense Amplifiers
• Synthesizers
• Synchronous Detectors
• Cascade Amplifiers
Pinout
CA3227 (SOIC)
TOP VIEW
1
2
3
4
SUBSTRATE 5
6
7
8
Q
3
Q
4
Q
2
16
15
14
Q
5
13
12
11
10
9
Q
1
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2002. All Rights Reserved
CA3227
Absolute Maximum Ratings
Collector to Emitter Voltage (V
CEO
). . . . . . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (V
CBO
) . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector to Substrate Voltage (V
CIO
, Note 1) . . . . . . . . . . . . . . 20V
Collector Current (I
C
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Thermal Information
Thermal Resistance (Typical, Note 2)
θ
JA
(
o
C/W)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to 125
o
C
16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . .
185
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 85mW
Maximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . 175
o
C
Maximum Junction Temperature (Plastic Package). . . . . . . . 150
o
C
Maximum Storage Temperature Range . . . . . . . . . . -65
o
C to 150
o
C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
o
C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of these devices is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be connected
to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
PARAMETER
T
A
= 25
o
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS FOR EACH TRANSISTOR
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
C1
= 10µA, I
B
= 0, I
E
= 0
V
EB
= 4.5V, I
C
= 0
V
CE
= 5V, I
B
= 0
V
CB
= 8V, I
E
= 0
V
CE
= 6V
I
C
= 10mA
I
C
= 1mA
I
C
= 0.1mA
Base to Emitter Voltage
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
NOTE:
3. On small-geometry, high-frequency transistors, it is very good practice never to take the Emitter Base Junction into reverse breakdown. To do
so may permanently degrade the h
FE
. Hence, the use of I
EBO
rather than V
(BR)EBO
. These devices are also susceptible to damage by
electrostatic discharge and transients in the circuits in which they are used. Moreover, CMOS handling procedures should be employed.
V
BE
V
CE SAT
V
BE SAT
V
CE
= 6V
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
I
C
= 1mA
12
8
20
-
-
-
-
40
-
0.62
-
0.74
20
10
-
-
-
-
110
150
150
0.71
0.13
-
-
-
-
10
1
100
-
-
-
0.82
0.50
0.94
V
V
V
V
V
V
µA
µA
nA
Collector to Substrate Breakdown Voltage V
(BR)CIO
Emitter Cutoff Current (Note 3)
Collector Cutoff Current
Collector Cutoff Current
DC Forward Current Transfer Ratio
I
EBO
I
CEO
I
CBO
h
FE
2
CA3227
Electrical Specifications
PARAMETER
T
A
= 25
o
C, 200MHz, Common Emitter, Typical Values Intended Only for Design Guidance
SYMBOL
TEST CONDITIONS
TYPICAL
VALUES
UNITS
DYNAMIC CHARACTERISTICS FOR EACH TRANSISTOR
Input Admittance
Y
11
b
11
g
11
Output Admittance
Y
22
b
22
g
22
Forward Transfer Admittance
Y
21
Y
21
θ
21
Reverse Transfer Admittance
Y
12
Y
12
θ
12
Input Admittance
Y
11
b
11
g
11
Output Admittance
Y
22
b
22
g
22
Forward Transfer Admittance
Y
21
Y
21
θ
21
Reverse Transfer Admittance
Y
12
Y
12
θ
12
Small Signal Forward Current Transfer Ratio
h
21
I
C
= 1mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
TYPICAL CAPACITANCE AT 1MHz, THREE-TERMINAL MEASUREMENT
Collector to Base Capacitance
Collector to Substrate Capacitance
Collector to Emitter Capacitance
Emitter to Base Capacitance
C
CB
C
CI
C
CE
C
EB
V
CB
= 6V
V
CI
= 6V
V
CE
= 6V
V
EB
= 3V
0.3
1.6
0.4
0.75
pF
pF
pF
pF
I
C
= 10mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 1mA, V
CE
= 5V
I
C
= 1mA, V
CE
= 5V
I
C
= 1mA, V
CE
= 5V
I
C
= 1mA, V
CE
= 5V
4
0.75
2.7
0.13
29.3
-33
0.38
-97
4.8
2.85
2.75
0.9
95
-62
0.39
-97
7.1
17
mS
mS
mS
mS
mS
Degrees
mS
Degrees
mS
mS
mS
mS
mS
Degrees
mS
Degrees
Spice Model
(Spice 2G.6)
.model NPN
+
+
+
+
+
+
+
+
BF = 2.610E + 02
RC = 1.000E + 01
IK = 1.000E - 01
ISC = 9.25E - 14
CJS = 1.800E - 12
CJC = 9.100E - 13
AF = 1.000E + 00
MJS = 3.530E - 01
BR = 4.401E + 00
RE = 7.396E - 01
ISE = 1.87E - 14
NC = 1.333E + 00
CJE = 1.010E - 12
PC = 3.850E - 01
EF = 1.000E + 00
RBM = 30.00
IS = 6.930E - 16
VA = 6.300E + 01
NE = 1.653E + 00
TF = 1.775E - 11
PE = 8.350E - 01
MC = 2.740E - 01
FC = 5.000E - 01
RBV = 100
RB = 130.0E + 00
VB = 2.208E + 00
IKR = 1.000E - 02
TR = 1.000E - 09
ME = 4.460E - 01
KF = 0.000E + 00
PJS = 5.410E - 01
IRB = 0.00
Please Note: No measurements have been made to model the reverse AC operation (tr is an estimation).
3
能源基础设施
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
