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HN58C65: 产品描述8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM; 文件大小109KB，共16页; 制造商Hitachi （Renesas ）; 官网地址http://www.renesas.com/eng/

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HN58C65概述

8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM

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HN58C65 Series

8192-word

8-bit Electrically Erasable and Programmable CMOS

ROM

ADE-203-374A (Z)

Rev. 1.0

Apr. 12, 1995

Description

The Hitachi HN58C65 is a electrically erasable and programmable ROM organized as 8192-word

8-bit. It

realizes high speed, low power consumption, and a high level of reliability, employing advanced MNOS

memory technology and CMOS process and circuitry technology. It also has a 32-byte page programming

function to make its erase and write operations faster.

Features

•

Single 5 V Supply

On chip latches: address, data,

CE, OE, WE

Automatic byte write: 10 ms max

Automatic page write (32 byte): 10 ms max

Fast access time: 250 ns max

Low power dissipation: 20 mW/MHz typ (Active)

2.0 mW typ (Standby)

Data

polling and Ready/Busy

Data protection circuity on power on/power off

Conforms to JEDEC byte-wide standard

Reliable CMOS with MNOS cell technology

erase/write cycles (in page mode)

10 year data retention

Ordering Information

Type No.

HN58C65P-25

HN58C65FP-25

Note:

Access Time

250 ns

Package

600 mil 28 pin plastic DIP (DP-28)

28 pin plastic SOP

(FP-28D/DA)

1. T is added to the end of the type no. for a SOP of 3.0 mm (max) thickness.

HN58C65相似产品对比

	HN58C65	HN58C65FP-25	HN58C65P-25
描述	8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM	8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM	8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
是否Rohs认证	-	不符合	不符合
零件包装代码	-	SOIC	DIP
包装说明	-	SOP, SOP28,.5	DIP, DIP28,.6
针数	-	28	28
Reach Compliance Code	-	unknow	unknow
ECCN代码	-	EAR99	EAR99
最长访问时间	-	250 ns	250 ns
其他特性	-	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; 32 BYTE PAGE WRITE; AUTOMATIC WRITE	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; 32 BYTE PAGE WRITE; AUTOMATIC WRITE
命令用户界面	-	NO	NO
数据轮询	-	YES	YES
数据保留时间-最小值	-	10	10
JESD-30 代码	-	R-PDSO-G28	R-PDIP-T28
JESD-609代码	-	e0	e0
长度	-	18.3 mm	35.6 mm
内存密度	-	65536 bi	65536 bi
内存集成电路类型	-	EEPROM	EEPROM
内存宽度	-	8	8
功能数量	-	1	1
端子数量	-	28	28
字数	-	8192 words	8192 words
字数代码	-	8000	8000
工作模式	-	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	-	70 °C	70 °C
组织	-	8KX8	8KX8
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	-	SOP	DIP
封装等效代码	-	SOP28,.5	DIP28,.6
封装形状	-	RECTANGULAR	RECTANGULAR
封装形式	-	SMALL OUTLINE	IN-LINE
页面大小	-	32 words	32 words
并行/串行	-	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED
电源	-	5 V	5 V
编程电压	-	5 V	5 V
认证状态	-	Not Qualified	Not Qualified
就绪/忙碌	-	YES	YES
座面最大高度	-	2.5 mm	5.7 mm
最大待机电流	-	0.001 A	0.001 A
最大压摆率	-	0.025 mA	0.025 mA
最大供电电压 (Vsup)	-	5.5 V	5.5 V
最小供电电压 (Vsup)	-	4.5 V	4.5 V
标称供电电压 (Vsup)	-	5 V	5 V
表面贴装	-	YES	NO
技术	-	CMOS	CMOS
温度等级	-	COMMERCIAL	COMMERCIAL
端子面层	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	-	GULL WING	THROUGH-HOLE
端子节距	-	1.27 mm	2.54 mm
端子位置	-	DUAL	DUAL
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED
切换位	-	NO	NO
宽度	-	8.4 mm	15.24 mm
Base Number Matches	-	1	1

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