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NSF2250WT1_06

产品描述UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
产品类别半导体    分立半导体   
文件大小80KB,共10页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 选型对比 全文预览

NSF2250WT1_06概述

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

超高频波段, 硅, NPN, 射频小信号晶体管

NSF2250WT1_06规格参数

参数名称属性值
端子数量3
晶体管极性NPN
最大集电极电流0.0500 A
最大集电极发射极电压15 V
加工封装描述CASE 419-04, SC-70, 3 PIN
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式GULL WING
端子涂层MATTE TIN
端子位置DUAL
包装材料PLASTIC/EPOXY
结构SINGLE
元件数量1
晶体管应用AMPLIFIER
晶体管元件材料SILICON
晶体管类型RF SMALL SIGNAL
最高频带ULTRA HIGH FREQUENCY BAND
额定交叉频率2300 MHz
最大集电极基极电容1.2 pF

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NSF2250WT1
NPN Silicon Oscillator and
Mixer Transistor
The NSF2250WT1 NPN silicon epitaxial bipolar transistor is
intended for use in general purpose UHF oscillator and mixer
applications. It is suitable for automotive keyless entry and TV tuner
designs.
The device features stable oscillation and small frequency drift
during changes in the supply voltage and over the ambient temperature
range.
Features
http://onsemi.com
COLLECTOR
3
1
BASE
High Gain Bandwidth Product: f
T
= 2000 MHz Minimum
Tightly Controlled h
FE
Range: h
FE
= 120 to 250
Low Feedback Capacitance: C
RE
= 0.45 pF Typical
Pb−Free Package is Available
2
EMITTER
MAXIMUM RATINGS
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Electrostatic Discharge
Symbol
V
CBO
V
CEO
VE
BO
I
C
ESD
Value
30
15
3.0
50
Units
V
V
V
mA
SOT−323/SC−70
CASE 419
STYLE 3
1
HBM − Class 1C
MM − Class A
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
Junction and Storage Temperature
Range
Symbol
P
D
Max
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
618 (Note 1)
403 (Note 2)
280 (Note 1)
332 (Note 2)
−55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
1
3M = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
3M M
G
G
MARKING DIAGRAM
R
qJA
R
qJL
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
ORDERING INFORMATION
Device
NSF2250WT1
NSF2250WT1G
Package
SOT−323
SOT−323
(Pb−Free)
Shipping
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 5
Publication Order Number:
NSF2250WT1/D

NSF2250WT1_06相似产品对比

NSF2250WT1_06 NSF2250WT1 NSF2250WT1G
描述 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
端子数量 3 3 3
表面贴装 Yes YES YES
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
元件数量 1 1 1
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON
最高频带 ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
Brand Name - ON Semiconduc ON Semiconduc
是否无铅 - 含铅 不含铅
厂商名称 - ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 - SC-70 SC-70
包装说明 - CASE 419-04, SC-70, 3 PIN SMALL OUTLINE, R-PDSO-G3
针数 - 3 3
制造商包装代码 - 419-04 419-04
Reach Compliance Code - _compli compli
ECCN代码 - EAR99 EAR99
最大集电极电流 (IC) - 0.05 A 0.05 A
基于收集器的最大容量 - 1.2 pF 1.2 pF
集电极-发射极最大电压 - 15 V 15 V
配置 - SINGLE SINGLE
最小直流电流增益 (hFE) - 120 120
JESD-30 代码 - R-PDSO-G3 R-PDSO-G3
JESD-609代码 - e0 e3
湿度敏感等级 - 1 1
最高工作温度 - 150 °C 150 °C
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) - 240 260
极性/信道类型 - NPN NPN
最大功率耗散 (Abs) - 0.202 W 0.202 W
认证状态 - Not Qualified Not Qualified
端子面层 - Tin/Lead (Sn/Pb) Tin (Sn)
处于峰值回流温度下的最长时间 - 30 40
标称过渡频率 (fT) - 2300 MHz 2300 MHz

 
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