NIF62514
Self-Protected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semiconductor’s latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
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6.0 AMPERES*
40 VOLTS CLAMPED
R
DS(on)
= 90 mW
Drain
Overvoltage
Protection
M
PWR
•
•
•
•
•
•
•
•
•
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
Low R
DS(on)
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
This is a Pb−Free Device
Gate
Input
R
G
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source
MARKING
DIAGRAM
DRAIN
AYW
62514G
1
G
2
3
1
2
3
SOURCE
GATE
DRAIN
A
= Assembly Location
Y
= Year
W
= Work Week
62514 = Specific Device Code
= Pb−Free Package
G
(Note: Microdot may be in either location)
4
4
SOT−223
CASE 318E
STYLE 3
ORDERING INFORMATION
Device
NIF62514T1G
NIF62514T3G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
†
1000/Tape & Reel
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*Limited by the current limit circuit.
©
Semiconductor Components Industries, LLC, 2009
April, 2009
−
Rev. 7
1
Publication Order Number:
NIF62514/D
NIF62514
MOSFET MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped (R
GS
= 1.0 MW)
Gate−to−Source Voltage
Drain Current
−
Continuous @ T
A
= 25°C
−
Continuous @ T
A
= 100°C
−
Pulsed (t
p
≤
10
ms)
Total Power Dissipation
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
@ T
A
= 25°C (Note 3)
Thermal Resistance,
Junction−to−Tab
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, V
DS
= 40 Vdc, I
L
= 2.8 Apk, L = 80 mH, R
G
= 25
W)
Operating and Storage Temperature Range
Symbol
V
DSS
V
DGR
V
GS
I
D
I
D
Value
40
40
"16
Unit
Vdc
Vdc
Vdc
Internally Limited
W
I
DM
P
D
1.1
1.73
8.93
14
114
72.3
300
−55
to 150
R
qJT
R
qJA
R
qJA
E
AS
T
J
, T
stg
°C/W
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted onto min pad board.
2. Mounted onto 1″ pad board.
3. Mounted onto large heatsink.
+
I
D
DRAIN
I
G
+
GATE
VDS
VGS
SOURCE
−
−
Figure 1. Voltage and Current Convention
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2
NIF62514
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
(V
GS
= 0 Vdc, I
D
= 250
mAdc,
T
J
= 150°C) (Note 4)
Zero Gate Voltage Drain Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
(V
DS
= 32 Vdc, V
GS
= 0 Vdc, T
J
= 150°C) (Note 4)
Gate Input Current
(V
GS
= 5.0 Vdc, V
DS
= 0 Vdc)
(V
GS
=
−5.0
Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 150
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 5)
(V
GS
= 10 Vdc, I
D
= 1.4 Adc, T
J
@ 25°C)
(V
GS
= 10 Vdc, I
D
= 1.4 Adc, T
J
@ 150°C) (Note 4)
Static Drain−to−Source On−Resistance (Note 5)
(V
GS
= 5.0 Vdc, I
D
= 1.4 Adc, T
J
@ 25°C)
(V
GS
= 5.0 Vdc, I
D
= 1.4 Adc, T
J
@ 150°C) (Note 4)
Source−Drain Forward On Voltage
(I
S
= 7 A, V
GS
= 0 V)
SWITCHING CHARACTERISTICS
(Note 4)
Turn−on Delay Time
Turn−on Rise Time
Turn−off Delay Time
Turn−off Fall Time
Slew−Rate On
Slew−Rate Off
10% V
in
to 10% I
D
R
L
= 4.7
W,
V
in
= 0 to 10 V, V
DD
= 12 V
10% I
D
to 90% I
D
R
L
= 4.7
W,
V
in
= 0 to 10 V, V
DD
= 12 V
90% V
in
to 90% I
D
R
L
= 4.7
W,
V
in
= 10 to 0 V, V
DD
= 12 V
90% I
D
to 10% I
D
R
L
= 4.7
W,
V
in
= 10 to 0 V, V
DD
= 12 V
R
L
= 4.7
W,
V
in
= 0 to 10 V, V
DD
= 12 V
R
L
= 4.7
W,
V
in
= 10 to 0 V, V
DD
= 12 V
(V
GS
= 5.0 Vdc)
(V
GS
= 5.0 Vdc, T
J
= 150°C) (Note 4)
(V
GS
= 10 Vdc)
(V
GS
= 10 Vdc, T
J
= 150°C) (Note 4)
V
GS
= 5.0 Vdc
V
GS
= 5.0 Vdc
V
GS
= 10 Vdc
V
GS
= 10 Vdc
Human Body Model (HBM)
Machine Model (MM)
t
d(on)
t
rise
t
d(off)
t
fall
−dV
DS
/dt
on
dV
DS
/dt
off
−
−
−
−
−
−
4.0
11
32
27
1.5
0.6
8.0
20
50
50
2.5
1.0
ms
ms
ms
ms
ms
ms
V
GS(th)
1.0
−
−
−
−
−
−
1.7
4.0
90
165
105
185
1.05
2.0
−
100
190
120
210
−
Vdc
mV/°C
mW
V
(BR)DSS
42
42
−
−
−
−
46
45
0.5
2.0
50
550
50
50
2.0
10
100
1000
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
mAdc
R
DS(on)
R
DS(on)
mW
V
SD
V
SELF PROTECTION CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Current Limit
Current Limit
Temperature Limit (Turn−off) (Note 4)
Temperature Hysteresis (Note 4)
Temperature Limit (Turn−off) (Note 4)
Temperature Hysteresis (Note 4)
I
LIM
I
LIM
T
LIM(off)
DT
LIM(on)
T
LIM(off)
DT
LIM(on)
ESD
ESD
6.0
3.0
7.0
4.0
150
−
150
−
9.0
5.0
10.5
7.5
175
15
165
15
11
8.0
13
10
200
−
185
−
Adc
Adc
°C
°C
°C
°C
V
V
ESD ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Electro−Static Discharge Capability
Electro−Static Discharge Capability
4000
400
−
−
−
−
4. Not subject to production testing.
5. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
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3
NIF62514
TYPICAL ELECTRICAL CHARACTERISTICS
12
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
10
8
6
4
2
0
3V
T
J
= 25°C
0
1
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 10 V
7V
6V
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
T
J
= 150°C
V
GS
= 10 V
7V
5V
4V
3V
6V
5V
4V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. Output Characteristics
14
I
D,
DRAIN CURRENT (AMPS)
V
GS
= 10 V
5V
4V
I
D,
DRAIN CURRENT (AMPS)
12
10
8
6
4
2
0
0
1
2
3
4
5
T
J
=
−40°C
3V
6
7V
6V
12
Figure 2. Output Characteristics
V
DS
= 5 V
10
8
6
4
T
J
=
−40°C
T
J
= 25°C
T
J
= 150°C
2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. Output Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
Figure 4. Transfer Characteristics
250
225
200
175
150
125
100
75
50
25
0
−50
Typical
Maximum
V
GS
= 10 V
I
D
= 1.4 A
250
225
200
175
150
125
100
75
50
25
0
−50
Typical
Maximum
V
GS
= 5 V
I
D
= 1.4 A
−25
0
25
50
75
100
125
150
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Drain−to−Source Resistance versus
Junction Temperature
Figure 6. Drain−to−Source Resistance versus
Junction Temperature
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4
NIF62514
I
DSS
, DRAIN−TO−SOURCE LEAKAGE
CURRENT (mA)
4
V
DS
= 32 V
3
GATE THRESHOLD VOLTAGE (V)
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
−50 −30 −10
10
30
50
70
90
110 130 150
V
TH
−
4 Sigma
V
TH
+ 4 Sigma
V
TH
I
D
= 150
mA
2
1
Typical
0
−50
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 7. Drain−to−Source Resistance versus
Junction Temperature
12
Current Limit
DRAIN CURRENT (AMPS)
10
V
GS
= 10 V
8
6
4
2
0
Figure 8. Gate Threshold Voltage versus
Temperature
Temperature Limit
V
GS
= 5 V
0
1
2
3
4
5
TIME (ms)
Figure 9. Short−circuit Response
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
100
Duty Cycle = 0.5
10
0.2
0.1
0.05
0.02
1
0.01
P
(pk)
t
1
t
2
Single Pulse
0.1
0.00001
0.0001
0.001
0.01
t,TIME (S)
DUTY CYCLE, D = t
1
/t
2
0.1
D CURVES APPLY
FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T
1
T
J(pk)
−
T
A
= P
(pk)
R
qJA
(t)
R
qJC
@
R(t) for t
≤
0.02
s
1
10
Figure 10. Transient Thermal Resistance
(Non−normalized Junction−to−Ambient mounted on minimum pad area)
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5
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