This circuit uses a darlington pair topology with resistive
feedback for broadband performance as well as stability
over its entire temperature range. Internally matched to
50 ohm impedance, the SGA-2363 requires only DC
blocking and bypass capacitors for external components.
SGA-2363
DC-2800 MHz Silicon Germanium
HBT Cascadeable Gain Block
Small Signal Gain vs. Frequency
24
18
Product Features
•
DC-2800 MHz Operation
•
2.7V Single Voltage Supply
•
High Output Intercept: +20.0dBm typ. at 850 MHz
•
Low Noise Figure: 2.9 dB typ. at 850 MHz
Applications
•
Broadband Gain Blocks
•
Cordless Phones
•
IF/ RF Buffer Amplifier
•
Drivers for CATV Amplifiers
dB
1 2
6
0
100
500
900
1900
2400
3500
6000
Frequency MHz
Symbol
P
1dB
Parameters: Test Conditions:
Z
0
= 50 Ohms, Id = 20 mA, T = 25ºC
Output Power at 1dB Compression
f = 850 MHz
f = 1950 MHz
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = 2000 - 2800 MHz
f = DC - 1000 MHz
f = 1000 - 2000 MHz
f = 2000 - 2800 MHz
f = DC - 2000 MHz
f = 2400 - 2800 MHz
f = DC - 2000 MHz
f = 2000 - 2800 MHz
f = 850 MHz
f = 1950 MHz
f = DC - 1000 MHz
f = 1000 - 2400 MHz
f = 1000 MHz
Units
dB m
dB m
dB
dB
dB
dB
dB
dB
-
-
dB m
dB m
dB
dB
pS
V
Min.
Typ.
8.2
7.2
Max.
15.7
S
21
Small Signal Gain
17.5
16.7
15.5
20.9
21.3
21.2
1.4:1
1.5:1
1.3:1
1.2:1
19.4
20.4
2.9
3.4
107
S
12
Reverse Isolation
S
11
S
22
IP
3
NF
T
D
V
D
Input VSWR
Output VSWR
Third Order Intercept Point
Power out per Tone = -10 dBm
Noise Figure
Group Delay
Device Voltage
2.4
2.7
3.0
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100628 Rev A
Preliminary
Preliminary
SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier
Specification
Parameter
Bandw idth
Frequency Range
Device Bias
Operating Voltage
Operating Current
500 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
850 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
1950 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
2400 MHz
Gain
Noise Figure
Output IP3
Output P1dB
Input Return Loss
Isolation
Min
DC
2.7
20
17.7
2.9
20.5
8.2
16.4
21.3
17.4
2.9
19.4
8.2
15.7
21.3
16.1
3.3
20.4
7.2
13.3
21.6
15.6
3.6
19.2
6.8
12.3
21.6
Typ.
Max.
2800
Unit
T= 25C
MHz
T= 25C
V
mA
T= 25C
dB
dB
dB m
dB m
dB
dB
T= 25C
dB
dB
dB m
dB m
dB
dB
T= 25C
dB
dB
dB m
dB m
dB
dB
T= 25C
dB
dB
dB m
dB m
dB
dB
Test
Condition
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100628 Rev A
2
Preliminary
Preliminary
SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier
Pin #
1
Function
Description
GND
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
GND
Sames as Pin 1
RF IN
RF input pin. This pin requires the use of
an external DC blocking capacitor
chosen for the frequency of operation.
GND
Sames as Pin 1
GND
Sames as Pin 1
RF OUT RF output and bias pin. DC voltage is
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
Device Schematic
2
3
4
5
6
Application Schematic for +5V Operation at 900 MHz
Note: A bias resistor is needed for
stability over temperature
1uF
68pF
115 ohms
V
CC
=+5V
33nH
50 ohm
microstrip
1,2
50 ohm
microstrip
3
6
100pF
4,5
100pF
Application Schematic for +5V Operation at 1900 MHz
1uF
22pF
115 ohms
V
CC
=+5V
22nH
50 ohm
microstrip
1,2
50 ohm
microstrip
3
6
68pF
4,5
68pF
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100628 Rev A
3
Preliminary
Preliminary
SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier
S21, Id =20mA, T=+25C
24
18
0
-1 0
S12, Id =20mA, T=+25C
dB
12
6
0
100
500
900
1900
2400
3500
6000
dB
-2 0
-3 0
-4 0
100
500
900
1900
2400
3500
6000
6000
Frequency MHz
Frequency MHz
S11, Id =20mA, T=+25C
0
-1 0
S22, Id =20mA, T=+25C
0
-1 0
dB
-2 0
-3 0
-4 0
100
500
900
1900
2400
3500
6000
dB
-2 0
-3 0
-4 0
100
500
900
1900
2400
3500
Frequency MHz
Frequency MHz
S11, Id=20mA, Ta= +25C
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
S22, Id=20mA, Ta= +25C
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94086
Phone: (800) SMI-MMIC
http://www.stanfordmicro.com
EDS-100628 Rev A
4
Preliminary
Preliminary
SGA-2363 DC-2800 MHz 2.7V SiGe Amplifier
S21, Id =20mA, T=-40C
24
18
0
-1 0
S12, Id =20mA, T=-40C
dB
1 2
6
0
100
500
900
1900
2400
3500
6000
dB
-2 0
-3 0
-4 0
100
500
900
1900
2400
3500
6000
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
Frequency MHz
Frequency MHz
S11, Id =20mA, T=-40C
0
-1 0
S22, Id =20mA, T=-40C
0
-1 0
dB
-2 0
-3 0
-4 0
100
500
900
1900
2400
3500
6000
dB
-2 0
-3 0
-4 0
100
500
900
1900
2400
3500
6000
Frequency MHz
Frequency MHz
S11, Id=20mA, T=-40C
Freq. Min = 0.1 GHz
Freq. Max = 6.0 GHz
S22, Id=20mA, T=-40C
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved.
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