UTC US104S/N
SCRs
DESCRIPTION
Thanks to highly sensitive triggering levels, the
UTC US104S is suitable for all applications where the
available gate current is limited, such as motor control
for hand tools, kitchen aids, overvoltage
crowbar protection for low power supplies, ...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
SCR
SYMBOL
A
K
1
G
TO-220
1: CATHODE
2: ANODE
3: GATE
ABSOLUTE RATINGS
PARAMETER
Repetitive peak off-state voltages and
Repetitive peak reverse voltage
US104S/N-4
US104S/N-6
US104S/N-8
RMS on-state current (180° conduction angle)
(Tc = 115°C)
Average on-state current (180° conduction angle)
(Tc = 115°C)
Non repetitive surge peak on-state current (Tj = 25°C)
tp=8.3ms
tp=10ms
I²t Value for fusing (tp = 10 ms, Tj = 25°C)
Critical rate of rise of on-state current
(IG = 2 x IGT , tr
≤
100 n s, F= 60 Hz ,Tj = 125°C)
Peak gate current (tp=20µs, Tj = 125°C)
Average gate power dissipation (Tj = 125°C)
Storage junction temperature range
Operating junction temperature range
SYMBOL
V
DRM
, V
RRM
I
T(RMS)
I
T(AV)
I
TSM
I²t
dI/dt
I
GM
P
G(AV)
Tstg
Tj
RATING
400
600
800
4
2.5
33
30
4.5
50
1.2
0.2
-40 ~ +150
-40 ~ +125
UNIT
V
A
A
A
A²S
A/µs
A
W
°C
°C
UTC US104S(SENSITIVE) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
Gate trigger Current
Gate trigger Voltage
Gate non-trigger voltage
Reverse gate voltage
Holding Current
SYMBOL
I
GT
V
GT
V
GD
V
RG
I
H
TEST CONDITIONS
V
D
= 12 V, R
L
=33
Ω
V
D
= 12 V, R
L
=33
Ω
MIN
MAX.
200
0.8
UNIT
µA
V
V
V
D
= V
DRM,
R
L
= 3.3 kΩ, R
GK
= 220Ω
Tj = 125°C
I
RG
= 10 µA
I
T
= 50 mA, R
GK
= 1 k
Ω
0.1
8
5
V
mA
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R301-011,C
UTC US104S/N
PARAMETER
Latching Current
Circuit Rate Of Change Of
off-state Voltage
On-state voltage
SCR
TEST CONDITIONS
I
G
= 1 mA ,R
GK
= 1 k
Ω
SYMBOL
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
MIN
5
MAX.
6
UNIT
mA
V/µs
V
D
= 67 % V
DRM
,
R
GK
= 220
Ω
Tj = 125°C
I
TM
= 8 A, t
p
= 380 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
1.6
0.85
90
5
1
V
V
mΩ
µA
mA
Threshold Voltage
Dynamic Resistance
Off-state Leakage Current
V
DRM
= V
RRM,
R
GK
= 220
Ω
Tj = 25°C
V
DRM
= V
RRM,
R
GK
= 220
Ω
Tj = 125°C
UTC US104N(STANDARD) ELECTRICAL CHARACTERISTICS
(Tj=25℃unless otherwise specified)
PARAMETER
Gate trigger Current
Gate trigger Voltage
Gate non-trigger voltage
Holding Current
Latching Current
Circuit Rate Of Change Of
off-state Voltage
On-state voltage
SYMBOL
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
TEST CONDITIONS
V
D
= 12 V, R
L
=33
Ω
V
D
= 12 V, R
L
=33
Ω
MIN
2
MAX.
15
1.3
UNIT
mA
V
V
V
D
= V
DRM,
R
L
= 3.3 kΩ,
Tj = 125°C
I
T
= 100 mA, Gate open
I
G
= 1.2 I
GT
0.2
30
60
100
1.6
0.85
62
5
2
mA
mA
V/µs
V
V
mΩ
µA
mA
V
D
= 67 % V
DRM
,
Gate open,Tj = 125°C
I
TM
=8A, t
p
= 380 µs,
Tj = 25°C
Tj = 125°C
Tj = 125°C
Threshold Voltage
Dynamic Resistance
Off-state Leakage Current
V
DRM
= V
RRM
Tj = 25°C
Tj = 125°C
THERMAL RESISTANCES
PARAMETER
Junction to case (DC)
Junction to ambient (DC)
SYMBOL
R
th(j-c)
R
th(j-a)
VALUE
3.0
60
UNIT
K/W
K/W
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R301-011,C
UTC US104S/N
Fig.1:Maximum average power dissipation vs
average on-state current
P/W
5.0
4.5
4.0
3.5
3.0
2.5
IT(av)(A)
SCR
Figure.2:Average and D.C. on-state current
vs case temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
IT(av)(A)
1.5
2.0
α
2.5
3.0
360°
α=180°
DC
α=180°
2.0
1.5
1.0
0.5
0.0
0
25
Tcase(℃)
50
75
100
125
Figure.3:Relative variation of gate trigger current
and holding current vs junction temperature.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
-20
0
20
1
IGT,IH,IL(TJ)/IGT,IH,IL (TJ=25℃)
5
Figure.4:Relative variation of holding current vs
gate-cathode vesistance(typical values).
IH(Rgk)/IH(Rgk=1kΩ)
Tj=25℃
IGT
IH&IL
Rgk=1kΩ
4
3
2
Tj(℃)
40
60
80
100
120
140
1E-2
0
Rgk(kΩ)
1E-1
1E+0
1E+1
Fig.5: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values).
dV/dt(Rgk)/dV/dt(Rgk=220Ω)
10.00
Fig.6: Relative variation of dV/dt immunity vs gate-
cathode resistance(typical values).
10
dV/dt(Cgk)/dV/dt(Rgk=220Ω)
Tj=125℃
VD=0.67* VDRM
Tj=125℃
VD=0.67* VDRM
8 Rgk=220Ω
1.00
6
4
0.10
2
0.01
0
Rgk(Ω)
0.2 0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Cgk(nF)
0
0
2
4
6
8
10 12
14
16
18
20 22
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R301-011,C
UTC US104S/N
Figure.7: Surge peak on-state current vs number
of cycles.
35
30
25
20
15
10
5
ITSM(A)
SCR
Fig.8:Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponding values of
2
t.
I
ITSM(A),I t(A s)
300
tp=10ms
2
2
Tjinitial=25℃
dI/dt
limitation
ITSM
Non repetitive
Tj initial=25℃
One cycle
100
Repetitive
Tcase=115℃
10
It
1
0.01
100
1000
tp(ms)
0.10
1.00
10.00
2
Number of cycles
0
1
10
Fig.9: On-state characteristics(maximum values).
50.0
ITSM(A)
Tj=max:
Vto=0.85V
10.0 Rd=90mΩ
Tj=Tjmax.
1.0
Tj=25℃
0.1
0.0
VTM(V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R301-011,C
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