2SC5866
Transistor
Medium power transistor (60V, 2A)
2SC5866
Features
1) High speed switching. (Tf : Typ. : 35ns at I
C
= 2A)
2) Low saturation voltage, typically
(Typ. : 200mV at I
C
= 1.0m, I
B
= 0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2094
External dimensions
(Units : mm)
TSMT3
0.95 0.95
(1)
2.8
1.6
1.9
0.4
(3)
(2)
2.9
1.0MAX
0.85
0.16
0.1
(1)Base
(2)Emitter
(3)Collector
0.3
0.6
Each lead has same dimensions
Abbreviated symbol : VL
Applications
Low frequency amplifier
High speed switching
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Taping
TL
3000
Code
Basic ordering unit
(pieces)
2SC5866
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗
1 Pw=10ms
∗
2 Each terminal mounted on a recommended land.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
60
60
6
2
4
500
150
−55
to
+150
Unit
V
V
V
A
A
mW
°C
°C
∗
1
∗
2
0
0.7
Rev.A
1/3
2SC5866
Transistor
Electrical characteristics
(Ta=25°C)
Parameter
Collector−base breakdown voltage
Symbol
BV
CBO
Min.
60
Typ.
−
Max.
−
Unit
V
I
C
=
100µA
Conditions
I
C
=
1mA
I
E
=
100µA
V
CB
=
40V
V
EB
=
4V
I
C
=
1A, I
B
=
0.1A
∗
1
V
CE
=
2V, I
C
=
100mA
V
CE
=
10V, I
E
= −
100mA, f
=
10MHz
∗
1
V
CB
=
10V, I
E
=
0mA, f
=
1MHz
I
C
=
2A,
I
B1
=
200mA
I
B2
= −
200mA
V
CC
25V
∗
2
Collector−emitter breakdown voltage BV
CEO
Emitter−base breakdown voltage
60
6
−
−
−
120
−
−
−
−
−
−
−
−
−
200
−
200
10
50
120
35
−
−
1.0
1.0
500
390
−
−
−
−
−
V
V
µA
µA
mV
−
MHz
pF
ns
ns
ns
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
fT
Collector cut-off current
Emitter cut-off current
Collector−emitter staturation voltage
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
C
ob
T
on
T
stg
Tf
∗1
Non repetitive pulse
∗2
See switching charactaristics measurement circuits
h
FE
RANK
Q
120-270
R
180-390
Electrical characteristic curves
10
1ms
1000
Ta=25°C
V
CC
=25V
I
C
/I
B
=10/1
1000
V
CE
=2V
Ta=125°C
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
10ms
Tstg
1
100ms
SWITCHING TIME (ns)
100
Ta=
−40°C
Ta=25°C
DC
0.1
100
Tf
Ton
10
0.01
Single non
repoetitive pulse
0.001
0.01
0.1
1
10
100
10
0.01
0.1
1
10
1
0.001
0.01
0.1
1
10
COLLECTOR EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Safe operating area
1000
Fig.2 Switching Time
10
Fig.3 DC current gain vs. collector
current
10
Ta=25°C
Ta=25°C
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat)(V)
V
CE
=5V
DC CURRENT GAIN : h
FE
I
C
/I
B
=10/1
100
V
CE
=2V
V
CE
=3V
1
Ta=125°C
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat)(V)
1
10
0.1
Ta=25°C
Ta=
−40°C
0.1
I
C
/I
B
=20/1
I
C
/I
B
=10/1
1
0.001
0.01
0.1
1
10
0.01
0.001
0.01
0.1
1
10
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs. collector
current
Fig.5 Collector-emitter saturation voltage
Fig.6 Collector-emitter saturation voltage
vs. collector current
vs. Collector Current
Rev.A
2/3
2SC5866
Transistor
10
I
C
/I
B
=10/1
V
CE
=2V
TRANSITION FREQUENCY : F
T
(MHz)
10
1000
Ta=25°C
V
CE
=10V
BASE EMITTER SATURATION
VOLTAGE : V
BE
(sat)
(V)
Ta=
−40°C
COLLECTOR CURRENT : I
C
(A)
1
1
Ta=125°C
100
Ta=25°C
Ta=125°C
0.1
0.1
Ta=25°C
10
Ta=
−40°C
0.01
0.01
0.001
0.01
0.1
1
10
0
0.5
1
1.5
1
−0.001
−0.01
−0.1
−1
−10
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
EMITTER CURRENT : I
E
(A)
Fig.7 Base-emitter saturation voltage
vs. collector current
Fig.8 Ground emitter propagation
characteristics
Fig.9 Transition frequency
COLLECTOR OUTPUT CAPACITANCE : C
oB
(pF)
100
Ta=25°C
f=1MHz
10
1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.10 Collector output capacitance
Switching characteristics measurement circuits
R
L
=12.5Ω
V
IN
I
B1
I
C
V
CC
25V
I
B2
1%
P
W
P
W
50 S
Duty cycle
I
B1
Base current
waveform
90%
Collector current
waveform
Ton
I
B2
I
C
10%
Tstg Tf
Rev.A
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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About Export Control Order in Japan
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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1