UNISONIC TECHNOLOGIES CO., LTD
2SA1012
HIGH CURRENT SWITCHING
APPLICATION
.
PNP SILICON TRANSISTOR
1
TO- 251
FEATURES
*Low collector saturation voltage
V
CE(SAT)
=-0.4V(max.) at Ic=-3A
*High speed switching time: t
S
=1.0µs(Typ.)
*Complementary to 2SC2562
1
TO-252
1
TO-220
1
TO-220F
*Pb-free plating product number: 2SA1012L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SA1012-x-TA3-T
2SA1012L-x-TA3-T
2SA1012-x-TF3-T
2SA1012L-x-TF3-T
2SA1012-x-TM3-T
2SA1012L-x-TM3-T
2SA1012-x-TN3-R
2SA1012L-x-TN3-R
2SA1012-x-TN3-T
2SA1012L-x-TN3-T
Package
TO-220
TO-220F
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tape Reel
Tube
2SA1012L-x-TA3-T
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F, TM3: TO-251,
TN 3: TO-252
FE1
(3) x: reference to Classification of h
(4) L: Lead Free Plating Blank: Pb/Sn
,
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ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃)
PARAMETER
PNP SILICON TRANSISTOR
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-50
V
Collector-Emitter Voltage
V
EBO
-5
V
Peak Collector Current
I
C
-5
A
Power Dissipation
P
D
25
W
℃
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25
℃
, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Switching time
Fall time
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE (SAT)
V
BE (SAT)
f
T
Cob
t
ON
t
S
t
F
TEST CONDITIONS
I
C
=-100µA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-1A
V
CE
=-1V, I
C
=-3A
I
C
=-3A, I
B
=-0.15A
I
C
=-3A, I
B
=-0.15A
V
CE
=-4V, I
C
=-1A
V
CB
=-10V, I
E
=0, f=1MHz
MIN
-60
-50
-5
TYP
MAX
UNIT
V
V
V
µA
µA
70
30
-0.2
-0.9
60
170
0.1
1.0
0.1
-1.0
-1.0
240
-0.4
-1.2
V
V
MHz
pF
µs
µs
µs
CLASSIFICATION of h
FE1
RANK
RANGE
O
70 ~ 140
Y
120 ~ 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA1012
■
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA1012
TYPICAL CHARACTERICS( cont.)
PNP SILICON TRANSISTOR
f
T
-Ic
10000
3000
V
CE
= -5V
f=1MHz
Tc=25℃
Transition frequency f
T
(MHz)
1000
300
100
30
10
3
1
-0.01 -0.03
-0.1
-0.3
-1
-3
-10
Collector current Ic(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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