®
BFX34
SILICON NPN TRANSISTOR
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
DESCRIPTION
The BFX34 is a silicon Epitaxial Planar NPN
transistor in Jedec TO-39 metal case, intented for
high current applications.
Very low saturation voltage and high speed at
high current levels make it ideal for power drivers,
power amplifiers, switching power supplies and
relay drivers inverters.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Total Dissipation at T
case
≤
25
o
C
o
T
amb
≤
25 C
Storage Temperature
Max. Operating Junction Temperature
Value
120
60
6
5
5
0.87
-65 to 200
200
Unit
V
V
V
A
W
W
o
o
C
C
August 2001
1/4
BFX34
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-amb
Max
Max
35
200
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= 60 V
V
EB
= 4 V
I
C
= 5 mA
120
Min.
Typ.
0.02
0.05
Max.
10
10
Unit
µA
µA
V
V
(BR)CBO
∗
Collector-base
Breakdown Voltage
(I
E
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
∗
I
C
= 100 mA
60
V
Emitter-base Voltage
(I
C
= 0)
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
DC Current Gain
I
E
= 1 mA
I
C
= 5 A
I
C
= 5 A
I
C
= 1 A
I
C
= 1.5 A
I
C
= 2 A
I
C
= 0.5 A
f = 20 MHz
I
C
= 0
f = 1 MHz
I
E
= 0
f = 1 MHz
I
C
= 0.5 A
I
B1
= -I
B2
= 0.5 A
I
B
= 0.5 A
I
B
= 0.5 A
V
CE
= 2 V
V
CE
= 0.6 V
V
CE
= 2 V
V
CE
= 5 V
V
EB
= 0.5 V
V
CB
= 10 V
6
0.4
1.3
100
75
80
100
300
40
500
100
1
1.6
V
V
V
V
CE(sat)
∗
V
BE(sat)
∗
h
FE
∗
40
70
150
MHz
pF
pF
f
T
∗
C
EBO
C
CBO
Transition Frequency
Emitter-base
Capacitance
Collector-base
Capacitance
RESISTIVE LOAD
Turn-on Time
Turn-off Time
t
on
t
off
V
CC
= 20 V
0.6
0.6
0.25
1.2
µs
µs
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/4
BFX34
TO-39 MECHANICAL DATA
mm
DIM.
MIN.
A
B
D
E
F
G
H
I
L
5.08
1.2
0.9
45
o
(typ.)
12.7
0.49
6.6
8.5
9.4
0.200
0.047
0.035
TYP.
MAX.
MIN.
0.500
0.019
0.260
0.334
0.370
TYP.
MAX.
inch
G
I
H
D
A
L
F
E
B
P008B
3/4
BFX34
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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