®
MJD340
MJD350
COMPLEMENTARY SILICON POWER TRANSISTORS
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MEDIUM VOLTAGE CAPABILITY
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
ELECTRICAL SIMILAR TO MJE340 AND
MJE350
3
1
DPAK
TO-252
(Suffix "T4")
APPLICATIONS
s
SOLENOID/RELAY DRIVERS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The MJD340 and MJD350 form complementary
NPN - PNP pairs.
They are manufactured using Medium Voltage
Epitaxial-Planar technology, resulting in a rugged
high performance cost-effective transistor.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (IC = 0)
Collector Current
o
Collector Peak Current (tp = 25 C)
Total Power Dissipation at T
case
≤
25
o
C
Storage Temperature
Max Operating Junction Temperature
Value
MJD340
MJD350
300
300
3
0.5
0.75
15
-65 to 150
150
V
V
V
A
A
W
o
o
Unit
C
C
For PNP types voltage and current values are negative.
September 2003
1/5
MJD340 / MJD350
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
8.33
100
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CBO
I
EBO
Parameter
Collector Cut-off
Current (v
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CB
= 300 V
V
EB
= 3 V
I
C
= 1 mA
300
Min.
Typ.
Max.
0.1
0.1
Unit
mA
mA
V
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
h
FE
∗
DC Current Gain
I
C
= 50 mA
V
CE
= 10 V
30
240
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
≤
2 %
For PNP type voltage and current values are negative.
Safe Operating Area
Derating Curve
2/5
MJD340 / MJD350
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (NPN type)
Collector Emitter Saturation Voltage (PNP type)
3/5
MJD340 / MJD350
TO-252 (DPAK) MECHANICAL DATA
mm
MIN.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.60
0
o
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.8
1.00
8
o
0.024
0
o
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
0.031
0.039
0
o
inch
TYP.
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
DIM.
P032P_B
4/5
MJD340 / MJD350
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
STMicroelectronics GROUP OF COMPANIES
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