®
MJD2955
MJD3055
COMPLEMENTARY POWER TRANSISTORS
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
ELECTRICALLY SIMILAR TO MJE2955T
AND MJE3055T
3
1
APPLICATIONS
s
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
DESCRIPTION
The
MJD2955
and
MJD3055
form
complementary PNP-NPN pairs. They are
manufactured using Epitaxial Base technology for
cost-effective performance.
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
NPN
PNP
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Base Current
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
MJD3055
MJD2955
70
60
5
10
6
20
-65 to 150
150
Unit
V
V
V
A
A
W
o
C
o
C
For PNP type voltage and current values are negative.
February 2002
1/6
MJD2955 / MJD3055
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
6.25
100
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CEX
I
CBO
I
CEO
I
EBO
Parameter
Test Conditions
T
j
= 150 C
T
j
= 150
o
C
o
Min.
Typ.
Max.
20
2
20
2
50
0.5
Unit
µA
mA
µA
mA
µA
mA
V
Collector Cut-off
V
CE
= 70 V
Current (V
BE
= -1.5 V) V
CE
= 70 V
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CB
= 70 V
V
CB
= 70 V
V
CE
= 30 V
V
EB
= 5 V
I
C
= 30 mA
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
∗
V
BE(on)
∗
h
FE
∗
f
T
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
60
I
C
= 4 A
I
C
= 10 A
I
C
= 4 A
I
C
= 4 A
I
C
= 10 A
I
C
= 0.5 A
I
B
= 0.4 A
I
B
= 3.3 A
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 10 V f = 500 KHz
20
5
2
1.1
8
1.8
100
V
V
V
MHz
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
For PNP type voltage and current values are negative.
Safe Operating Area
Derating Curves
2/6
MJD2955 / MJD3055
DC Current Gain (NPN type)
DC Current Gain (PNP type)
DC Transconductance (NPN type)
DC Transconductance (PNP type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
3/6
MJD2955 / MJD3055
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
Transition Frequency (NPN type)
Transition Frequency (PNP type)
4/6
MJD2955 / MJD3055
TO-252 (DPAK) MECHANICAL DATA
mm
MIN.
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.60
0
o
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.8
1.00
8
o
0.024
0
o
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
0.031
0.039
0
o
inch
TYP.
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
DIM.
P032P_B
5/6