〈SMALL-SIGNAL TRANSISTOR〉
2SC5383
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
DESCRIPTION
2SC5383 is a ultra super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for low frequency voltage application.
.
0.4
1.6
0.8
0.4
OUTLINE DRAWING
Unit：½½
0.5
①
②
③
1.6
1.0
FEATURE
● Small collector to emitter saturation voltage.
VCE(sat)=0.3V max（@Ic=100mA,IB=10mA）
●Excellent linearity of DC forward gain.
●Ultra super mini package for easy mounting
0.7
0.5
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA：SC-75A
JEDEC：-
MAXIMUM RATINGS
（Ta=25℃）
Symbol
V
CBO
V
CEO
V
EBO
I
O
TERMINAL CONNECTER
Ratings
50
50
6
200
150
＋150
-55½＋150
Unit
V
V
V
mA
mW
℃
℃
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
①：BASE
②：EMITTER
③：COLLECTOR
P
c
T
j
T
stg
ELECTRICAL CHARACTERISTICS
（Ta=25℃）
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
Symbol
V(BR)
CEO
I
CBO
I
EBO
hFE
hFE
VCE(sat)
fT
Cob
NF
I
C
=100μA ,R
V
V
V
V
CB
EB
BE
0½0.1
APPLICATION
0.55
0.15
Limits
Min
50
-
-
※
150
90
-
-
-
-
Typ
-
-
-
-
-
-
200
2.5
-
Max
-
0.1
0.1
800
-
0.3
-
-
15
V
MHz
pF
dB
Test conditions
=∞
0.3
Unit
V
μA
μA
=50V, I
E
=0mA
=6V, I
C
=0mA
=6V, I
C
=1mA
=6V, I
C
=0.1mA
=6V, I
E
=-10mA
=6V, I
E
=0,f=1MHz
CE
CE
I
C
=100mA ,I
B
=10mA
V
V
V
CE
CB
CE
=6V, I
E
=-0.1mA,f=1kHz,RG=2kΩ
※） It shows hFE classification in below table.
Item
½ＦＥ
Item
Ｅ
150½300
Ｆ
250½500
Ｇ
400½800
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
2SC5383
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
COMMON EMITTER OUTPUT
50
0.16mA
50
COMMON EMITTER TRANSFER
0.14mA
0.12mA
0.10mA
Ta=25℃
COLLECTOR CURRENT IC(mA)
40
Ta=25℃
VCE=6V
COLLECTOR CURRENT IC(mA)
40
30
0.08mA
20
0.06mA
0.04mA
10
0.02mA
IB=0
0
0
1
2
3
4
COLLECTOR EMITTER VOLTAGE VCE(V)
5
30
20
10
0
0
0.2
0.4
0.6
0.8
BASE TO EMITTER VOLTAGE VBE(V)
1
DC FORWARD CURRENT GAIN
VS. COLLECTOR CURRENT
10000
GAIN BAND WIDTH PRODUCT fT(MHz)
250
GAIN BAND WIDTH PRODUCT
VS. EMITTER CURRENT
Ta=25℃
VCE=6V
200
RELATIVE VALUE OF DC FORWARD
CURRENT GAIN hFE
Ta=25℃
VCE=6V
100(@IC=1mA)
1000
150
100
100
10
50
1
0.1
1
10
100
1000
COLLECTOR CURRENT IC(mA)
0
-0.1
-1
-10
EMITTER CURRENT IE(mA)
-100
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
100
COLLECTOR OUTPUT CAPACITANCE
Cob(pF)
COLLECTOR DISSIPATION Pc (mW)
COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE
250
Ta=25℃
IE=0
f=1MHz
10
200
150
100
1
50
0
0.1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE VCB(V)
0
25
50
75
100
125
150
AMBIENT TEMPERTURE Ta (℃)
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
2SC5383
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
ISAHAYA ELECTRONICS CORPORATION
DSP 与 ARM 处理器
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