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FM25L16B-GTR

产品描述Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
产品类别存储    存储   
文件大小468KB,共14页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
标准
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FM25L16B-GTR概述

Memory Circuit, 2KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

FM25L16B-GTR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Ramtron International Corporation (Cypress Semiconductor Corporation)
零件包装代码SOIC
包装说明SOP,
针数8
Reach Compliance Codeunknown
JESD-30 代码R-PDSO-G8
长度4.9 mm
内存密度16384 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度8
功能数量1
端子数量8
字数2048 words
字数代码2000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织2KX8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)2.7 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度3.9 mm
Base Number Matches1

文档预览

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FM25L16B
16Kb Serial 3V F-RAM Memory
Features
16K bit Ferroelectric Nonvolatile RAM
Organized as 2,048 x 8 bits
High Endurance 100 Trillion (10
14
) Read/Writes
38 Year Data Retention (
@
+75ºC)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7-3.6V
200
A
Active Current (1 MHz)
3
A
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40C to +85C
8-pin “Green”/RoHS SOIC and TDFN Packages
Description
The FM25L16B is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM25L16B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been transferred to the device. The next bus cycle
may commence without the need for data polling.
The FM25L16B is capable of supporting 10
14
read/write cycles, or a million times more write
cycles than EEPROM.
These capabilities make the FM25L16B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25L16B provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25L16B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
CS
SO
WP
VSS
1
2
3
4
8
7
6
5
VDD
HOLD
SCK
SI
Top View
/CS
SO
/WP
VSS
1
2
3
4
8
7
6
5
VDD
/HOLD
SCK
SI
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage
Ground
Ordering Information
FM25L16B-G
FM25L16B-GTR
FM25L16B-DG
FM25L16B-DGTR
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
“Green”/RoHS 8-pin TDFN
“Green”/RoHS 8-pin TDFN,
Tape & Reel
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Rev. 3.0
Jan. 2012
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-F-RAM, (719) 481-7000
www.ramtron.com
Page 1 of 14
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