DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5745
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Low voltage operation, low phase distortion
• Ideal for OSC applications
• Flat-lead 3-pin thin-type ultra super minimold package
ORDERING INFORMATION
Part Number
2SC5745
2SC5745-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
15
5.5
1.5
100
200
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy substrate
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15439EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP(K)
Printed in Japan
©
2001
2SC5745
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
f
T
S
21e
2
NF
C
re
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 10 mA
–
–
100
–
–
–
100
100
145
nA
nA
–
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
4.0
3.0
–
0.7
5.5
4.5
2.0
0.8
–
–
3.0
0.9
GHz
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
TY
100 to 145
2
Data Sheet P15439EJ1V0DS
2SC5745
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Total Power Dissipation P
tot
(mW)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
300
250
200
150
100
50
Mounted on Glass Epoxy Board
(1.08 cm
2
×
1.0 mm (t) )
1.0
f = 1 MHz
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
V
CE
= 1 V
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
V
CE
= 2 V
80
80
60
60
40
40
20
20
0
0.2
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
35
Collector Current I
C
(mA)
200
µ
A
180
µ
A
160
µ
A
140
µ
A
120
µ
A
100
µ
A
120
µ
A
80
60
µ
A
40
µ
A
I
B
= 20
µ
A
5
6
7
30
25
20
15
10
5
0
1
2
3
4
Collector to Emitter Voltage V
CE
(V)
Data Sheet P15439EJ1V0DS
3
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