d. Maximum under Steady State conditions is 80 °C/W.
Document Number: 74430
S09-0138-Rev. B, 02-Feb-09
www.vishay.com
1
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typ.
29
13
Max.
35
16
Unit
°C/W
Si4642DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On -State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 13 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2 A
0.44
36
34
19
17
T
C
= 25 °C
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 10 V, R
G
= 1
Ω
V
DD
= 15 V, R
L
= 3
Ω
I
D
≅
5 A, V
GEN
= 4.5 V, R
G
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
5540
790
346
74
35.7
16.8
10.7
1.5
76
180
53
50
17
24
46
9
2.3
115
270
80
75
26
36
70
15
7
70
0.53
55
52
ns
Ω
110
54
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 20 A
40
0.0031
0.0039
108
0.00375
0.0047
0.05
5.5
30
1.5
3
± 100
0.2
50
V
nA
mA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode and Schottky Characteristics
A
V
ns
nC
ns
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74430
S09-0138-Rev. B, 02-Feb-09
Si4642DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
70
V
GS
= 10 thru 4
V
56
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
1.2
1.0
0.8
42
0.6
28
0.4
T
C
= 125 °C
14
3
V
0
0.0
0.2
25 °C
- 55 °C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0050
7000
6000
R
D S(on)
- On-Resistance (Ω)
0.0045
V
GS
= 4.5
V
0.0040
C - Capacitance (pF)
5000
4000
3000
2000
Transfer Characteristics
C
iss
0.0035
V
GS
= 10
V
0.0030
1000
0.0025
0
10
20
30
40
50
60
0
0
C
rss
6
C
oss
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
1.7
I
D
= 20 A
V
G S
- Gate-to-So
u
rce
V
oltage (
V
)
8
R
D S(o n)
- On-Resistance
(
N
ormalized)
V
DS
= 10
V
6
V
DS
= 15
V
V
DS
= 20
V
4
1.5
Capacitance
V
GS
= 4.5
V
1.3
V
GS
= 10
V
1.1
2
0.9
0
0
10
20
30
40
50
60
70
80
0.7
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74430
S09-0138-Rev. B, 02-Feb-09
www.vishay.com
3
Si4642DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.015
I
D
= 20 A
R
D S(on)
- O n-Resistance (Ω)
0.012
I
S
- So
u
rce C
u
rrent (A)
10
T
J
= 150 °C
0.009
T
J
= 25 °C
1
0.006
25 °C
0.003
125 °C
0.1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.1
200
On-Resistance vs. Gate-to-Source Voltage
0.01
I
R
- Reverse (A)
30
V
0.001
10
V
20
V
Po
w
er (
W
)
160
120
0.0001
80
0.00001
40
0.000001
0
25
50
75
100
125
150
T
J
- Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
Reverse Current (Schottky)
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
0.1
T
C
= 25 °C
Single Pulse
0.01
0.01
*
V
GS
0.1
1
10
10 s
DC
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area
www.vishay.com
4
Document Number: 74430
S09-0138-Rev. B, 02-Feb-09
Si4642DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
45
36
I
D
- Drain C
u
rrent (A)
27
18
9
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
10
2.0
8
1.6
Po
w
er (
W
)
4
Power (W)
6
1.2
0.8
2
0.4
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Foot
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
“tensymetry”这个词在《韦伯斯特词典》中没有解释，但在医学界却广为人知。由Tensys Medical Systems公司开发的tensymetry是一种使用生物机械、电气、软件工程的专有组合技术。利用这三种强大的技术，你可在手术室内对病人的心跳血压进行精确、连续、实时和非侵入性测量。 该技术结出的果实就是该公司的T-line Tensymeter产品。该产品线的最新进展是去年...[详细]
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