PD-94283F
IRHMS597160
JANSR2N7550T1
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number
IRHMS597160
IRHMS593160
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.05
0.05
I
D
-45A
-45A
QPL Part Number
JANSR2N7550T1
JANSF2N7550T1
Low-Ohmic
TO-254AA
100V, P-CHANNEL
REF: MIL-PRF-19500/713
5
TECHNOLOGY
R
Description
IR HiRel R5 technology provides high performance power
MOSFETs for space applications. These devices have
been characterized for Single Event Effects (SEE) with
useful performance up to an LET of 80 (MeV/(mg/cm
2
)).
The combination of low RDS(on) and low gate charge
reduces the power losses in switching applications such as
DC to DC converters and motor control. These devices
retain all of the well established advantages of MOSFETs
such as voltage control, fast switching and temperature
stability of electrical parameters.
.
Features
Single Event Effect (SEE) Hardened
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Light Weight
High Electrical Conductive Package
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= -12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
-45
-28.5
-180
208
1.67
± 20
480
-45
20.8
-6.0
-55 to + 150
300 ((0.063in./1.6mm from case for 10s)
9.3 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
I
D2
@ V
GS
= -12V, T
C
= 100°C Continuous Drain Current
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-01-15
IRHMS597160
JANSR2N7550T1
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Static Drain-to-Source On-State Rsistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Pre-Irradiation
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
Reference to 25°C, I
D
= -1.0mA
Min. Typ. Max. Units
-100 –––
––– -0.13
–––
-2.0
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
6110
1574
115
–––
–––
0.05
-4.0
–––
-10
-25
-100
100
170
65
30
35
100
100
120
–––
–––
–––
–––
V
V/°C
V
S
V
GS
= -12V, I
D2
= -28.5A
V
DS
= V
GS
, I
D
= -1.0mA
V
DS
= -15V, I
D2
= -28.5A
V
DS
= -80V, V
GS
= 0V
µA
V
DS
= -80V,V
GS
= 0V,T
J
=125°C
V
GS
= -20V
nA
V
GS
= 20V
I
D1
= -45A
nC
V
DS
= -50V
V
GS
= -12V
V
DD
= -50V
I
D1
= -45A
ns
R
G
= 1.20
V
GS
= -12V
Measured from Drain lead
(6mm /0.25in. from package) to
nH
Source lead (6mm /0.25in.from pack-
age) with Source wires internally
bonded from Source Pin to Drain Pad
V
GS
= 0V
pF
V
DS
= -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-45
-180
-5.0
200
1.6
A
V
ns
µC
Test Conditions
T
J
= 25°C,I
S
= -45A, V
GS
= 0V
T
J
= 25°C, I
F
= -45A, V
DD
≤
50V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Symbol
R
JC
R
JCS
R
JA
Junction-to-Case
Case -to- Sink
Junction-to-Ambient (Typical socket mount)
Parameter
Min.
–––
–––
–––
Typ.
–––
0.21
–––
Max.
0.60
–––
48
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= -50V, starting T
J
= 25°C, L = 0.48mH, Peak I
L
= -45A, V
GS
= -12V
V
I
SD
-45A, di/dt
-365A/µs, V
DD
-100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. -12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. –80 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2019-01-15
IRHMS597160
JANSR2N7550T1
Radiation Characteristics
Pre-Irradiation
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-254AA)
Diode Forward Voltage
100 kRads (Si)
1
Min.
-100
-2.0
–––
–––
–––
–––
–––
–––
Max.
–––
-4.0
-100
100
-10
0.05
0.05
-5.0
300 kRads (Si)
2
Min.
-100
-2.0
–––
–––
–––
–––
–––
–––
Max.
–––
-5.0
-100
100
-10
0.05
0.05
-5.0
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= -1.0mA
V
DS
= V
GS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
= -80V, V
GS
= 0V
V
GS
= -12V, I
D2
= -28.5A
V
GS
= -12V, I
D2
= -28.5A
V
GS
= 0V, I
S
= -45A
Units
Test Conditions
1. Part number IRHMS597160 (JANSR2N7550T1)
2. Part numbers IRHMS593160 (JANSF2N7550T1)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
LET
(MeV/(mg/cm ))
37.9
59.7
82.3
2
Energy
(MeV)
252.6
314
350
Range
(µm)
33.1
30.5
28.4
VDS (V)
@VGS=
0V
-100
-100
-100
@VGS=
5V
-100
-100
-100
@VGS=
10V
-100
-100
-100
@VGS=
15V
-100
-100
-30
@VGS=
17.5V
-100
-75
–––
@VGS=
20V
-100
-25
–––
Br
I
Au
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2019-01-15
IRHMS597160
JANSR2N7550T1
Pre-Irradiation
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2019-01-15
International Rectifier HiRel Products, Inc.
IRHMS597160
JANSR2N7550T1
Pre-Irradiation
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area
Fig 9.
Maximum Drain Current Vs. Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
International Rectifier HiRel Products, Inc.
2019-01-15
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