MBRF60020 thru MBRF60045R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types up to 45 V V
RRM
TO-244AB Package
V
RRM
= 20 V - 45 V
I
F
= 600 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak
reverse voltage
RMS reverse
voltage
DC blocking
voltage
Continuous
forward current
Surge non-
repetitive forward
current, Half Sine
Wave
Operating
temperature
Storage
temperature
Symbol
V
RRM
V
RMS
V
DC
I
F
T
C
≤
130 °C
T
C
= 25 °C, t
p
= 8.3
ms
Conditions
MBRF60020 (R) MBRF60030 (R) MBRF60035 (R) MBRF60040 (R) MBRF60045 (R) Unit
20
14
20
600
30
21
30
600
35
25
35
600
40
28
40
600
45
32
45
600
V
V
V
A
I
F,SM
4000
4000
4000
4000
4000
A
T
j
T
stg
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
-40 to 175
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward
voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 300 A, T
j
= 25 °C
V
R
= 20 V, T
j
= 25 °C
V
R
= 20 V, T
j
= 125 °C
MBRF60020 (R) MBRF60030 (R) MBRF60035 (R) MBRF60040 (R) MBRF60045 (R) Unit
0.65
10
200
0.65
10
200
0.65
10
200
0.65
10
200
0.65
10
200
V
mA
Thermal characteristics
Thermal
resistance,
junction - case
R
thJC
0.28
0.28
0.28
0.28
0.28
°C/W
www.genesicsemi.com
1
MBRF60020 thru MBRF60045R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
http://www.genesicsemi.com/index.php/silicon-products/schottky
3
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