Agilent HCPL-354
AC Input Phototransistor
Optocoupler
SMD Mini-Flat Type
Data Sheet
Features
• AC input response
• Current transfer ratio
(CTR: min. 20% at I
F
=
±
1 mA,
V
CE
= 5 V)
• Isolation voltage between input
and output (V
iso
= 3,750 V
rms
)
• Subminiature type
(The volume is smaller than that of
conventional DIP type by as far as
30%)
• Mini-flat package
• 2.0 mm profile
• UL approved
• CSA approved
• IEC/EN/DIN EN 60747-5-2
approved
• Options available:
– IEC/EN/DIN EN 60747-5-2
approvals (060)
Applications
• Detecting or monitoring AC signals
• Programmable controllers
• AC/DC-input modules
• AC line/digital logic isolation
Description
The HCPL-354 contains a
phototransistor, optically coupled to
two light emitting diodes connected
inverse parallel. It can operate
directly by AC input current. It is
packaged in a 4-pin mini-flat SMD
package with a 2.0 mm profile. The
small dimension of this product
allows significant space saving. The
package volume is 30% smaller than
that of conventional DIP type. Input-
output isolation voltage is 3750 V
rms
.
Response time, t
r
, is typically 4
µs
and minimum CTR is 20% at input
current of
±
1 mA.
Ordering Information
Specify Part Number followed by
Option Number (if desired).
HCPL-354-XXXE
Lead Free
Option Number
000 = No Options
060 = IEC/EN/DIN EN 60747-5-2
Option
00A = Rank Mark A
Functional Diagram
1
4
2
3
1. ANODE, CATHODE
2. CATHODE, ANODE
3. EMITTER
4. COLLECTOR
CAUTION:
It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawing
HCPL-354-000E
2.54
±
0.25
3.60
±
0.3
5.30
±
0.3
354
Y WW
LEAD
FREE
DATE CODE *1
4.40
±
0.2
2.00
±
0.2
0.2
±
0.05
0.40
±
0.1
RANK *2
0.10
±
0.1
+ 0.2
7.00 – 0.7
DIMENSIONS IN MILLIMETERS.
HCPL-354-060E
2.54
±
0.25
3.60
±
0.3
5.30
±
0.3
354 V
Y WW
LEAD
FREE
DATE CODE *1
4.40
±
0.2
2.00
±
0.2
0.2
±
0.05
0.40
±
0.1
RANK *2
0.10
±
0.1
+ 0.2
7.00 – 0.7
DIMENSIONS IN MILLIMETERS.
Temperature (°C)
Solder Reflow Temperature Profile
1) One-time soldering reflow is
recommended within the
condition of temperature and
time profile shown at right.
2) When using another soldering
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the
device. Keep the temperature on
the package of the device within
the condition of (1) above.
30 seconds
250°C
217°C
200°C
260°C (Peak Temperature)
150°C
60 sec
25°C
60 ~ 150 sec
90 sec
Time (sec)
60 sec
2
Absolute Maximum Ratings
Parameters
Storage Temperature
Ambient Operating Temperature
Lead Solder Temperature for 10s
(1.6 mm below seating plane)
Average Forward Current
Input Power Dissipation
Collector Current
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Power Dissipation
Total Power Dissipation
Isolation Voltage
(AC for 1 minute, R.H. = 40 ~ 60%)
[1]
Symbol
T
S
T
A
T
sol
I
F
P
I
I
C
V
CEO
V
ECO
P
C
P
tot
V
iso
Min.
–55
–55
Max.
150
100
260
±50
70
50
35
6
150
170
3750
Units
˚C
˚C
˚C
mA
mW
mA
V
V
mW
mW
V
rms
Electrical Specifications (T
A
= 25˚C)
Parameter
Forward Voltage
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
Current Transfer Ratio
[2]
Collector-Emitter Saturation Voltage
Isolation Resistance
Floating Capacitance
Response Time (Rise)
Response Time (Fall)
Rank Mark
A
No Mark
CTR (%)
50 ~ 150
20 ~ 400
Symbol
V
F
C
t
I
CEO
BV
CEO
BV
ECO
I
C
CTR
V
CE(sat)
R
iso
C
f
t
r
t
f
Conditions
I
F
=
±1
mA,
V
CE
= 5 V,
T
A
= 25˚C
Min.
–
–
–
35
6
0.2
20
–
5 x 10
10
–
–
–
Typ.
1.2
30
–
–
–
–
–
0.1
1 x 10
11
0.6
4
3
Max.
1.4
250
100
–
–
4
400
0.2
–
1
18
18
Units
V
pF
nA
V
V
mA
%
V
Ω
pF
µs
µs
Test Conditions
I
F
=
±20
mA
V = 0, f = 1 kHz
V
CE
= 20 V, I
F
= 0
I
C
= 0.1 mA, I
F
= 0
I
E
= 10
µA,
I
F
= 0
I
F
=
±1
mA,
V
CE
= 5 V
I
F
=
±20
mA, I
C
= 1 mA
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
V
CE
= 2 V, I
C
= 2 mA,
R
L
= 100
Ω
Notes:
1. Isolation voltage shall be measured using the following method:
(a) Short between anode and cathode on the primary side and between collector and emitter
on the secondary side.
(b) The isolation voltage tester with zero-cross circuit shall be used.
(c) The waveform of applied voltage shall be a sine wave.
I
2.
CTR =
C
x 100%
I
F
3
60
I
F
– FORWARD CURRENT – mA
P
C
– COLLECTOR POWER DISSIPATION – mW
50
40
30
20
10
0
-55
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
200
6
T
A
= 25°C
5
4
3
2
1
0
0
25
50
75
100
125
I
C
= 0.5 mA
I
C
= 1 mA
I
C
= 3 mA
I
C
= 5 mA
I
C
= 7 mA
150
100
50
0
25
50
75
100
125
0
-55
0
2.5
5.0
7.5
10.0
12.5
15.0
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
I
F
– FORWARD CURRENT – mA
Figure 1. Forward current vs. ambient
temperature.
Figure 2. Collector power dissipation vs.
ambient temperature.
Figure 3. Collector-emitter saturation voltage
vs. forward current.
CTR – CURRENT TRANSFER RATIO – %
500
I
F
– FORWARD CURRENT – mA
200
100
50
20
10
5
2
1
0
120
100
80
60
40
20
I
C
– COLLECTOR CURRENT – mA
T
A
= 75°C
T
A
= 50°C
T
A
= 25°C
140
V
CE
= 5 V
T
A
= 25°C
50
T
A
= 25°C
T
A
= 0°C
T
A
= -25°C
40
I
F
= 30 mA
30
P
C
(MAX.)
I
F
= 20 mA
I
F
= 10 mA
20
10
I
F
= 5 mA
I
F
= 1 mA
0.5
1.0
1.5
2.0
2.5
3.0
0
0.1 0.2 0.5 1
2
5 10 20
50 100
0
0
1
2
3
4
5
6
7
8
9 10
V
F
– FORWARD VOLTAGE – V
I
F
– FORWARD CURRENT – mA
V
CE
– COLLECTOR-EMITTER VOLTAGE – V
Figure 4. Forward current vs. forward voltage.
Figure 5. Current transfer ratio vs. forward
current.
Figure 6. Collector current vs. collector-
emitter voltage.
RELATIVE CURRENT TRANSFER RATIO – %
150
V
CE(SAT.)
– COLLECTOR-EMITTER
SATURATION VOLTAGE – V
0.10
I
F
= 1 mA
V
CE
= 5 V
I
F
= 20 mA
I
C
= 1 mA
0.08
I
CEO
– COLLECTOR DARK CURRENT – nA
10000
V
CE
= 20 V
1000
100
0.06
100
0.04
50
0.02
10
0
20
40
60
80
100
0
20
40
60
80
100
1
20
40
60
80
100
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
T
A
– AMBIENT TEMPERATURE – °C
Figure 7. Relative current transfer ratio vs.
ambient temperature.
Figure 8. Collector-emitter saturation
voltage vs. ambient temperature.
Figure 9. Collector dark current vs. ambient
temperature.
4
100
50
RESPONSE TIME – µs
V
CE
= 2 V
I
C
= 2 mA
T
A
= 25°C
t
f
t
d
t
s
VOLTAGE GAIN AV – dB
t
r
20
10
5
2
1
0.5
0.2
0.1
0
V
CE
= 2 V
I
C
= 2 mA
T
A
= 25°C
R
L
= 10 kΩ
-10
R
L
= 1 kΩ
R
L
= 100
Ω
0.1 0.2
0.5
1
2
5
10
-20
0.2
0.5 1 2
5 10
100
1000
R
L
– LOAD RESISTANCE – kΩ
f – FREQUENCY – kHz
Figure 10. Response time vs. load resistance.
Figure 11. Frequency response.
V
CC
INPUT
Figure 12. Test circuit for response time.
;;
R
D
R
L
INPUT
OUTPUT
OUTPUT
10%
90%
t
d
t
r
t
s
t
f
; ;;
R
D
V
CC
R
L
OUTPUT
Figure 13. Test circuit for frequency response.
5
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