2SK3526-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
200304
Super FAP-G Series
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
P4
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings
600
±8
±32
±30
8
145.6
20
5
1.67
135
Operating and storage
+150
-55 to +150
temperature range
*1 L=4.2mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch <150°C
=
*3 I
F
< -I
D
, -di/dt=50A/µs, Vcc < BV
DSS
, Tch < 150°C
*4 VDS < 600V
=
=
=
=
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Symbol
V
DS
I
D
I
D(puls]
V
GS
I
AR
*2
E
AS
*1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
Unit
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Test Conditions
I
D
= 250µA
V
GS
=0V
I
D
= 250µA
V
DS
=V
GS
V
DS
=600V V
GS
=0V
V
DS
=480V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=3A V
GS
=10V
I
D
=3A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=3A
V
GS
=10V
R
GS
=10
Ω
V
CC
=300V
I
D
=6A
V
GS
=10V
L=4.2mH T
ch
=25°C
I
F
=6A V
GS
=0V T
ch
=25°C
I
F
=6A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
T
ch
=25°C
T
ch
=125°C
10
0.93
6
750
100
4.0
14
9
24
7
20
8.5
5.5
1.00
0.7
3.5
Min.
600
3.0
Typ.
Max.
5.0
25
250
100
1.20
1130
150
6.0
21
14
36
10.5
30
13
8.5
1.50
Units
V
V
µA
nA
Ω
S
pF
3
ns
nC
8
A
V
µs
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max.
0.926
75.0
Units
°C/W
°C/W
1
2SK3526-01L,S,SJ
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
Typical Output Characteristics
18
16
14
20V
10V
8V
7.5V
ID=f(VDS):80µs Pulse test,Tch=25°C
200
150
12
ID [A]
PD [W]
10
8
6
7.0V
100
50
4
2
VGS=6.5V
0
0
25
50
75
100
125
150
0
0
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
Tc [
°
C]
VDS [V]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
10
10
ID[A]
1
gfs [S]
1
0.1
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
1
10
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
2.6
2.4
2.2
2.0
1.8
8V
VGS=6.5V
7.0V
7.5V
2.5
10V
2.0
20V
3.0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
RDS(on) [
Ω
]
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
10
12
RDS(on) [
Ω
]
1.5
max.
typ.
1.0
0.5
0.0
14
16
18
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3526-01L,S,SJ
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
18
16
14
24
22
20
Typical Gate Charge Characteristics
VGS=f(Qg):ID=3A, Tch=25°C
Vcc= 120V
300V
480V
VGS(th) [V]
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
VGS [V]
4.0
12
10
8
6
4
2
0
0
10
20
30
40
50
60
Tch [
°
C]
Qg [nC]
10n
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Forward Characteristics of Reverse Diode
100
IF=f(VSD):80µs Pulse test,Tch=25°C
1n
Ciss
10
C [F]
100p
Coss
IF [A]
1
0.1
0.00
10p
Crss
1p
10
-1
10
0
10
1
10
2
10
3
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
350
Maximum Avalanche Energy vs. starting Tch
E
AS
=f(starting Tch):Vcc=60V
I
AS
=4A
300
10
2
tr
td(off)
250
I
AS
=5A
E
AS
[mJ]
200
I
AS
=8A
t [ns]
10
1
td(on)
tf
150
100
50
10
0
0
10
0
10
1
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
2SK3526-01L,S,SJ
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=60V
FUJI POWER MOSFET
10
2
Avalanche Current I
AV
[A]
Single Pulse
10
1
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Outline Drawings (mm)
Type(L)
Type(S)
Type(SJ)
4
1
2 3
1
4 2
3
1
2 3
1
2
3
http://www.fujielectric.co.jp/denshi/scd/
4
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