Si4403DY
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.017 @ V
GS
= –4.5 V
–20
0.023 @ V
GS
= –2.5 V
0.032 @ V
GS
= –1.8 V
FEATURES
I
D
(A)
–9
–7
–6
D
TrenchFETr Power MOSFETS
APPLICATIONS
D
Load Switch
– Game Stations
– Notebooks
– Desktops
S
SO-8
S
S
S
G
1
2
3
4
Top View
D
P-Channel MOSFET
8
7
6
5
D
G
D
D
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
–2.1
2.5
1.6
–55 to 150
–7
–30
–1.3
1.35
0.87
W
_C
–5.0
A
Symbol
V
DS
V
GS
10 secs
Steady State
–20
"8
Unit
V
–9
–6.5
THERMAL RESISTANCE RATINGS
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a
Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71683
S-04393—Rev. A, 13-Aug-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
38
71
19
Maximum
50
92
25
Unit
_C/W
C/W
1
Si4403DY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –16 V, V
GS
= 0 V
V
DS
= –16 V, V
GS
= 0 V, T
J
= 70_C
V
DS
–5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –7.4 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –2.5 V, I
D
= –6.3 A
V
GS
= –1.8 V, I
D
= –5.5 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –15 V, I
D
= –7.4 A
I
S
= –1.3 A, V
GS
= 0 V
20
0.014
0.018
0.024
28
–0.64
–1.1
0.017
0.023
0.032
W
W
S
V
–0.45
"100
–1
–10
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1.3 A, di/dt = 100 A/ms
V
DD
= –10 V, R
L
= 15
W
I
D
^
–1 A, V
GEN
= –4.5 V, R
G
= 6
W
V
DS
= –10 V, V
GS
= –5 V, I
D
= –7.4 A
30.5
5.3
3.8
30
30
110
65
45
50
50
200
110
80
ns
50
nC
Notes
a
Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 5 thru 2 V
24
I
D
– Drain Current (A)
I
D
– Drain Current (A)
24
30
Transfer Characteristics
18
1.5 V
12
18
12
T
C
= 125_C
25_C
0
0.0
–55_C
1.0
1.5
2.0
6
0–1V
0
0
2
4
6
8
6
0.5
V
DS
– Drain-to-Source Voltage (V)
www.vishay.com
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71683
S-04393—Rev. A, 13-Aug-01
2
Si4403DY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.075
r
DS(on)
– On-Resistance (
W
)
5000
Vishay Siliconix
Capacitance
C – Capacitance (pF)
0.060
4000
C
iss
0.045
3000
0.030
V
GS
= 1.8 V
V
GS
= 2.5 V
2000
C
oss
0.015
V
GS
= 4.5 V
0.000
0
6
12
18
24
30
1000
C
rss
0
4
0
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 7.4 A
4
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 7.4 A
1.4
3
r
DS(on)
– On-Resistance (
W)
(Normalized)
14
21
28
35
1.2
2
1.0
1
0.8
0
0
7
Q
g
– Total Gate Charge (nC)
0.6
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.075
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
T
J
= 150_C
10
r
DS(on)
– On-Resistance (
W
)
0.060
0.045
I
D
= 7.4 A
0.030
T
J
= 25_C
0.015
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71683
S-04393—Rev. A, 13-Aug-01
www.vishay.com
3
Si4403DY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
40
Single Pulse Power, Junction-to-Ambient
32
0.2
V
GS(th)
Variance (V)
Power (W)
I
D
= 250
mA
0.0
24
16
–0.2
8
–0.4
–50
–25
0
25
50
75
100
125
150
0
10
–2
10
–1
1
Time (sec)
10
100
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 71_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
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4
Document Number: 71683
S-04393—Rev. A, 13-Aug-01
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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