MOSFET 60V 3A N-Channel
参数名称 | 属性值 |
Brand Name | ON Semiconductor |
是否无铅 | 含铅 |
零件包装代码 | TO-261AA |
包装说明 | CASE 318E-04, TO-261, 4 PIN |
针数 | 4 |
制造商包装代码 | 0.0318 |
Reach Compliance Code | not_compliant |
ECCN代码 | EAR99 |
雪崩能效等级(Eas) | 74 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V |
最大漏极电流 (Abs) (ID) | 3 A |
最大漏极电流 (ID) | 3 A |
最大漏源导通电阻 | 0.12 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-261AA |
JESD-30 代码 | R-PDSO-G4 |
JESD-609代码 | e0 |
湿度敏感等级 | 1 |
元件数量 | 1 |
端子数量 | 4 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 175 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 2.1 W |
最大脉冲漏极电流 (IDM) | 9 A |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | Tin/Lead (Sn80Pb20) |
端子形式 | GULL WING |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
NTF3055L108T1 | NTF3055L108T3 | NTF3055L108T3G | NTF3055L108T3LFG | NTF3055L108T3LF | |
---|---|---|---|---|---|
描述 | MOSFET 60V 3A N-Channel | MOSFET 60V 3A N-Channel | MOSFET 60V 3A N-Channel | MOSFET 60V 3A N-Channel | MOSFET 60V 3A N-Channel |
零件包装代码 | TO-261AA | TO-261AA | TO-261AA | TO-261AA | TO-261AA |
包装说明 | CASE 318E-04, TO-261, 4 PIN | CASE 318E-04, TO-261, 4 PIN | ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN | ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN | CASE 318E-04, TO-261, 4 PIN |
针数 | 4 | 4 | 4 | 4 | 4 |
制造商包装代码 | 0.0318 | CASE 318E-04 | 0.0318 | CASE 318E-04 | CASE 318E-04 |
Reach Compliance Code | not_compliant | not_compliant | not_compliant | unknown | not_compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
雪崩能效等级(Eas) | 74 mJ | 74 mJ | 74 mJ | 74 mJ | 74 mJ |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V | 60 V | 60 V | 60 V | 60 V |
最大漏极电流 (Abs) (ID) | 3 A | 3 A | 3 A | 3 A | 3 A |
最大漏极电流 (ID) | 3 A | 3 A | 3 A | 3 A | 3 A |
最大漏源导通电阻 | 0.12 Ω | 0.12 Ω | 0.12 Ω | 0.12 Ω | 0.12 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-261AA | TO-261AA | TO-261AA | TO-261AA | TO-261AA |
JESD-30 代码 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
JESD-609代码 | e0 | e0 | e3 | e3 | e0 |
湿度敏感等级 | 1 | 3 | 1 | 3 | 3 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 4 | 4 | 4 | 4 | 4 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | 260 | 260 | 240 |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 2.1 W | 2.1 W | 2.1 W | 2.1 W | 2.1 W |
最大脉冲漏极电流 (IDM) | 9 A | 9 A | 9 A | 9 A | 9 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES |
端子面层 | Tin/Lead (Sn80Pb20) | Tin/Lead (Sn80Pb20) | Tin (Sn) | Tin (Sn) | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | 40 | 40 | 30 |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | 1 | 1 | 1 | 1 |
是否Rohs认证 | - | 不符合 | - | 符合 | 不符合 |
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