PTF180101S
LDMOS RF Power Field Effect Transistor
10 W, 1805 – 1880 MHz, 1930 – 1990 MHz
10 W, 2110 – 2170 MHz
Description
The PTF180101S is a 10-watt, internally-matched
GOLDMOS
®
FET device
intended for EDGE applications in the DCS/PCS band. Full gold metalliza-
tion ensures excellent device lifetime and reliability.
PTF180101S
Package H-32259-2
EDGE EVM Performance
EVM and Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 0.18 A, f = 1989.8 MHz
4
40
Efficiency
3
30
Features
•
•
RoHS-compliant, Pb-free package
Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19.0 dB
- Efficiency = 28%
- EVM = 1.1 %
Typical WCDMA performance
- Average output power = 1.8 W
- Gain = 18.0 dB
- Efficiency = 20%
- ACPR = –45 dBc
Typical CW performance
- Output power at P–1dB = 15 W
- Efficiency = 50%
Integrated ESD protection: Human Body
Model Class 1 (minimum)
Low HCI drift, excellent thermal stability
Capable of handling 10:1 VSWR @ 28 V, 10
W (CW) output power
EVM RMS (Average %)
x
Efficiency (%)
•
2
20
1
EVM
0
25
30
35
40
10
•
0
•
•
•
Output Power (dBm)
RF Characteristics, EDGE Operation
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 4 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
—
—
—
—
—
Typ
1.1
–60
–70
19
28
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
η
D
table continued on next page
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
*See Infineon distributor for future availability.
Rev. P03, 2007-03-01
PTF180101S
RF Characteristics, EDGE Operation
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 180 mA, P
OUT
= 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
18
30
—
Typ
19
33
–30
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
RF Characteristics, WCDMA Operation
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 135 mA, P
OUT
= 1.8 W,
f = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 dB @ 0.01% CCDF
Characteristic
Adjacent Channel Power Ratio
Gain
Drain Efficiency
Symbol
ACPR
G
ps
η
D
Min
—
—
—
Typ
–45
18
20
Max
—
—
—
Unit
dBc
dB
%
Two-tone Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 135 mA, P
OUT
= 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency @ –30 dBc IM3
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
18
37
–30
Max
—
—
—
Unit
dB
%
dBc
η
D
IMD
DC Characteristincs
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 A
V
DS
= 28 V, I
DQ
= 180 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2.5
—
Typ
—
—
0.83
3.2
—
Max
—
1.0
—
4.0
1.0
Unit
V
µA
Ω
V
µA
Data Sheet
2 of 10
Rev. P03, 2007-03-01
PTF180101S
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 10 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
58
0.333
–40 to +150
3.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTF180101S
Package Outline
H-32259-2
Package Description
Thermally enhanced, surface mount
Marking
PTF180101S
Typical Performance
measurements taken in broadband test fixture
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 0.18 A, f = 1989.8 MHz
-50
400 kHz
-60
50
EVM and Modulation Spectrum Performance
f = 1989.8 MHz, P
OUT
= 3.5 W
8
-40
400 kHz
600 kHz
EVM
-50
-60
-70
-80
-90
-100
-110
0.30
40
600 kHz
EVM RMS (Average %)
.
7
6
5
4
3
2
1
0.00
Efficiency (%)
ACPR (dBc)
-70
-80
30
20
Efficiency
10
0
-90
-100
25
30
35
40
0.05
0.10
0.15
0.20
0.25
Output Power (dBm)
Quiscent Drain Current (A)
Data Sheet
3 of 10
Rev. P03, 2007-03-01
ACPR (dBc)
PTF180101S
Typical Performance
(cont.)
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 0.18 A, f = 1990 MHz
Output Power, Gain & Efficiency
(at P-1dB)
vs. Frequency
V
DD
= 28 V, I
DQ
= 0.18 A
60
50
21
20
25
24
Efficiency
70
60
50
Output Pow er
40
30
20
Gain
1920
1940
1960
1980
2000
10
0
2020
Gain
23
19
18
Efficiency
17
16
29
32
35
38
41
44
40
30
20
10
22
21
20
19
18
1900
Output Power (dBm)
Frequency (MHz)
Power Gain vs. Output Power
V
DD
= 28 V, f = 1990 MHz
50
Efficiency
I
DQ
= 0.235 mA
Broadband Test Fixture Performance
V
DD
= 28 V, I
DQ
= 0.18 A, P
OUT
= 10 W
21
15
5
-5
Gain
-15
Return Loss
-25
-35
2020
Gain (dB), Efficiency (%)
40
30
20
10
0
1900
Power Gain (dB)
20
I
DQ
= 0.180 mA
19
I
DQ
= 0.135 mA
18
0
1
10
100
1930
1960
1990
Output Power (W)
Frequency (MHz)
Data Sheet
4 of 10
Rev. P03, 2007-03-01
Return Loss (dB)
Output Power (dBm),
Efficiency (%)
Efficiency (%)
Gain (dB)
Gain (dB)
PTF180101S
Typical Performance
(cont.)
Output Power vs. Supply Voltage
Broadband Test Fixture Performance
V
DD
= 28 V, I
DQ
= 0.18 A, P
OUT
= 4 W
30
20
I
DQ
= 0.18 A, f = 1990 MHz
42
Gain (dB), Efficiency (%)
25
20
15
10
Efficiency
Gain
10
0
-10
-20
Return Loss
-30
-40
2020
Output Power (dBm)
Return Loss (dB)
41
40
39
38
37
22
24
26
28
30
32
5
0
1900
1930
1960
1990
Frequency (MHz)
Supply Voltage (V)
Intermodulation Distortion vs. Output Power
V
DD
= 28 V, I
DQ
= 0.18 A, f
1
= 1990 MHz, f
2
= 1991 MHz
-20
-30
Gate-Source Voltage vs. Case Temperature
Voltage normalized to 1.0 V, series show current
1.04
1.03
0.05 A
0.28 A
0.51 A
0.74 A
0.97 A
1.20 A
IMD (dBc)
-40
-50
-60
-70
7th
-80
30
32
34
36
38
40
42
5th
Bias Voltage (V)
3rd Order
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0
20
40
60
80
100
Output Power, PEP (dBm)
Case Temperature (°C)
Data Sheet
5 of 10
Rev. P03, 2007-03-01
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