VS-16CTU04SPbF, VS-16CTU04-1PbF
www.vishay.com
Vishay Semiconductors
Ultrafast Rectifier, 16 A FRED Pt
®
FEATURES
•
•
•
•
•
Ultrafast recovery time
Low forward voltage drop
Low leakage current
175 °C operating junction temperature
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-263AB (D
2
PAK)
Base
Common
Cathode
2
TO-262AA
Base
Common
Cathode
2
DESCRIPTION / APPLICATIONS
1
Anode
2
Common
Cathode
3
Anode
1
Anode
2
Common
Cathode
3
Anode
VS-16CTU04SPbF
VS-16CTU04-1PbF
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-263AB (D
2
PAK), TO-262AA
2x8A
400 V
0.94 V
35 ns
175 °C
Common cathode
Vishay Semiconductors FRED Pt
®
series are the state of the
art ultrafast recovery rectifiers specifically designed with
optimized performance of forward voltage drop and ultrafast
recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
per leg
total device
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FRM
T
J
, T
Stg
Rated V
R
, T
C
= 155 °C
T
C
= 25 °C
Rated V
R
, square wave, 20 kHz, T
C
= 155 °C
TEST CONDITIONS
VALUES
400
8
16
100
16
-65 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 400 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
400
-
-
-
-
-
-
TYP.
-
1.19
0.94
0.2
20
14
8.0
MAX.
-
1.3
1.0
10
500
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 09-Jul-15
Document Number: 94009
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16CTU04SPbF, VS-16CTU04-1PbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μA, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
35
43
67
2.8
6.3
60
210
MAX.
60
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-263AB (D
2
PAK)
Case style TO-262
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
1.8
-
0.5
2.0
0.07
-
MAX.
175
2.0
50
-
-
-
12
(10)
16CTU04S
16CTU04-1
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Revision: 09-Jul-15
Document Number: 94009
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16CTU04SPbF, VS-16CTU04-1PbF
www.vishay.com
Vishay Semiconductors
1000
100
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
0.001
0.0001
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
I
F
- Instantaneous
Forward Current (A)
10
1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
0.1
0
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
100
200
300
400
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
t
2
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
.
1
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 09-Jul-15
Document Number: 94009
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16CTU04SPbF, VS-16CTU04-1PbF
www.vishay.com
180
90
80
170
70
DC
I
F
= 16 A
I
F
= 8 A
Vishay Semiconductors
Allowable Case Temperature (°C)
t
rr
(ns)
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
160
60
50
40
30
20
100
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
1000
150
140
130
0
2
4
6
8
10
12
I
F(AV)
Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
14
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
500
RMS limit
450
400
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
Average Power Loss (W)
12
10
8
6
4
2
0
0
2
4
6
350
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
Q
rr
(nC)
300
250
200
150
100
50
8
10
12
0
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Revision: 09-Jul-15
Document Number: 94009
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16CTU04SPbF, VS-16CTU04-1PbF
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 09-Jul-15
Document Number: 94009
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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