Freescale Semiconductor
Technical Data
Document Number: MRFG35010A
Rev. 2, 12/2008
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WiMAX, WLL/MMDS or UMTS driver and final applications.
Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for
use in Class AB or Class A linear base station applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 12 Volts, I
DQ
=
140 mA, P
out
= 1 Watt Avg., f = 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain —10 dB
Drain Efficiency — 25%
ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth
•
10 Watts P1dB @ 3550 MHz, CW
•
Excellent Phase Linearity and Group Delay Characteristics
•
High Gain, High Efficiency and High Linearity
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRFG35010AR1
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
CASE 360D - 02, STYLE 1
NI - 360HF
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Symbol
V
DSS
V
GS
P
in
T
stg
T
ch
Value
15
-5
33
- 65 to +150
175
Unit
Vdc
Vdc
dBm
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 10 W CW
Case Temperature 79°C, 1 W CW
Class AB
Class A
Symbol
R
θJC
Value
(1, 2)
4.0
4.1
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1C (Minimum)
A (Minimum)
III (Minimum)
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MRFG35010AR1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
Off State Leakage Current
(V
GS
= - 0.4 Vdc, V
DS
= 0 Vdc)
Off State Drain Current
(V
DS
= 12 Vdc, V
GS
= - 2.2 Vdc)
Off State Current
(V
DS
= 28.5 Vdc, V
GS
= - 2.5 Vdc)
Gate - Source Cut - off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 15 mA)
Quiescent Gate Voltage
(V
DS
= 12 Vdc, I
D
= 180 mA)
Symbol
I
DSS
I
GSS
I
DSO
I
DSX
V
GS(th)
V
GS(Q)
Min
—
—
—
—
- 1.2
- 1.2
Typ
2.9
<1
0.09
5
- 0.8
- 0.8
Max
—
100
1
15
- 0.7
- 0.7
Unit
Adc
μAdc
mAdc
mAdc
Vdc
Vdc
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
(1)
V
DD
= 12 Vdc, I
DQ
= 140 mA, P
out
= 1 W Avg., f = 3550 MHz,
Single - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
G
ps
h
D
ACPR
9
23
—
10
25
- 43
—
—
- 40
—
dB
%
dBc
W
Typical RF Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 12 Vdc, I
DQ
= 140 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P1dB
—
10
1. Measurements made with device in test fixture.
MRFG35010AR1
2
RF Device Data
Freescale Semiconductor
V
BIAS
C13
C8
C7
C6
C5
C4
R2
V
SUPPLY
C14
C12
C11
C10
C9
C3
C15
C2
R1
Z9
RF
INPUT
Z1
C1
Z2
Z3
Z4
Z5
Z6
Z8
Z7
Z12
C16
Z10
Z11
Z13
Z14
Z15
Z16
C17
Z17
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8, Z11
0.044″
0.044″
0.615″
0.044″
0.270″
0.044″
0.434″
0.015″
x 0.250″ Microstrip
x 0.030″ Microstrip
x 0.050″ Microstrip
x 0.070″ Microstrip
x 0.490″ Microstrip
x 0.470″ Microstrip
x 0.110″ Microstrip
x 0.527″ Microstrip
Z9, Z10
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.290″ x 90° Microstrip Radial Stub
0.184″ x 0.390″ Microstrip
0.040″ x 0.580″ Microstrip
0.109″ x 0.099″ Microstrip
0.030″ x 0.225″ Microstrip
0.080″ x 0.240″ Microstrip
0.044″ x 0.143″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.5
Figure 1. 3.5 GHz Test Circuit Schematic
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Part
C1, C17
C2, C16
C3, C15
C4, C13, C14
C5, C12
C6, C11
C7, C10
C8, C9
R1, R2
Description
6.8 pF Chip Capacitors
10 pF Chip Capacitors
100 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
0.1
μF
Chip Capacitors
39K Chip Capacitors
10
μF,
50 V Chip Capacitors
50
Ω
Chip Resistors
Part Number
100A6R81BW150XT
100A100JW150XT
100A101JW150XT
100B101JW500XT
100B102JW500XT
200B104KW50XT
200B393KW50XT
GRM55DR61H106KA88B
P51ETR - ND
Manufacturer
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Murata
Newark
MRFG35010AR1
RF Device Data
Freescale Semiconductor
3
C8
C9
R2
C7
C6
C5
C4
C3
C2
C16
R1
C13
C12 C11 C10
C14
C15
C1
C17
MRFG35010, Rev. 8
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35010AR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
14
G
T
, TRANSDUCER GAIN (dB)
12
10
8
6
4
2
10
15
20
25
30
35
P
out
, OUTPUT POWER (dBm)
V
DS
= 12 Vdc, I
DQ
= 140 mA, f = 3550 MHz
Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
Γ
S
= 0.850
∠
−138.7_
Γ
L
= 0.827
∠
−157.6_
G
T
60
50
40
30
20
10
0
40
η
D
, DRAIN EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
η
D
Figure 3. Single - Carrier W - CDMA Power Gain
and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
−10
V
DS
= 12 Vdc, I
DQ
= 140 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
S
= 0.850
∠
−138.7_,
Γ
L
= 0.827
∠
−157.6_
0
−20
−5
−30
IRL
−10
−40
−15
−50
ACPR
−60
15
20
25
30
35
P
out
, OUTPUT POWER (dBm)
−20
−25
40
Figure 4. Single - Carrier W - CDMA ACPR and
Input Return Loss versus Output Power
NOTE:
All data is referenced to package lead interface.
Γ
S
and
Γ
L
are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35010AR1
RF Device Data
Freescale Semiconductor
5
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