CCD Linear Image Sensor
MN3610H
2048-Bit High-Responsivity CCD Linear Image Sensor
s
Overview
The MN3610H is a 2048-pixel high sensitivity CCD linear image
sensor combining photo-sites using low dark output floating
photodiodes and CCD analog shift registers for read out. It provides
large output at a high S/N ratio for visible light inputs over a wide
range of wavelength.
s
Pin Assignments
1
OS
DS
V
DD
ø
R
ø
1B
ø
1A
NC
NC
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
2048
(Top View)
C20
s
Features
•
2048 floating photodiodes and n-channel buried type CCD shift
registers for read out are integrated in a single chip.
•
Use of photodiodes with a new structure has made the dark output
voltage very low.
•
All the input pulses can be driven by CMOS 5V-type logics.
•
Has a smooth spectral characteristics that is close to the sensitivity
of the human eye in the entire visible region.
•
Large signal output of typically 2000mV at saturation can be
obtained.
•
Since a compensation output pin (DS) is provided in addition to the
signal output pin (OS), it is possible to obtain a signal with a high
S/N ratio by carrying out differential amplification of the OS and
DS outputs.
•
Operation with a single +12V positive power supply.
22
21
20
19
18
17
16
15
14
13
12
V
SS
ø
SG
ø
2B
ø
2A
NC
NC
NC
NC
NC
NC
NC
WDIP022-G-0470
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Application
•
Graphic and character read out in fax machines,
image scanners, etc.
•
Measurement of position and dimensions of
objects.
s
Block Diagram
V
SS
22
ø
SG
21
ø
2B
20
ø
2A
19
2
1 21 21 2
B1
B2
B3
2 1 21 21 21 2 1
B 51
B 52
D1
D2
D3
1
2
3
4
5
1 21 2 1 21 2 1 21
2045
2046
2047
2048
D4
D5
D6
D7
D8
1
2
12121
1 21 21 21 21 2
21 21 21 21 21 2
B1 to B52 : Black reference pixels
D
1
2
3
4
5
6
D1 to D8 : Dummy invalid pixels
OS DS V
DD
ø
R
ø
1B
ø
1A
CCD Linear Image Sensor
s
Absolute Maximum Ratings (Ta=25˚C, V
SS
=0V)
Parameter
Power supply voltage
Input pin voltage
Output pin voltage
Operating temperature range
Storage temperature range
Symbol
V
DD
V
I
V
O
T
opr
T
stg
Rating
– 0.3 to +15
– 0.3 to +15
– 0.3 to +15
–25 to + 60
–40 to +100
MN3610H
Unit
V
V
V
˚C
˚C
s
Operating Conditions
•
Voltage conditions (Ta=–25 to +60˚C, V
SS
=0V)
Parameter
Power supply voltage
CCD shift register clock High level
CCD shift register clock Low level
Shift gate clock High level
Shift gate clock Low level
Reset gate clock High level
Reset gate clock Low level
Symbol
V
DD
V
ø H
V
ø L
V
SH
V
SL
V
RH
V
RL
Condition
min
11.4
4.5
0
4.5
0
4.5
0
typ
12.0
5.0
0.2
5.0
0.2
5.0
0.2
max
13.0
5.5
0.5
5.5
0.5
5.5
0.5
Unit
V
V
V
V
V
V
V
•
Timing conditions (Ta=–20 to +60˚C)
Parameter
Shift register clock frequency
Reset clock frequency
Shift register clock rise time
Shift regisster clock fall time
Shift clock rise time
Shift clock fall time
Shift clock set up time
Shift clock pulse width
Shift clock hold time
Reset clock rise time
Reset clock fall time
Reset clock pulse width
Reset clock hold time
Symbol
f
C
f
R
t
Cr
t
Cf
t
Sr
t
Sf
t
Ss
t
Sw
t
Sh
t
Rr
t
Rf
t
Rw
t
Rh
f
C
=1/2T
See drive timing diagram. f
R
=1/T
Condition
min
—
—
0
0
0
0
0
200
0
0
0
40
100
typ
0.5
1.0
50
50
50
50
100
1000
100
15
15
250
125
max
2.5
5.0
100
100
100
100
—
—
—
30
30
—
—
Unit
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
Electrical Characteristics
•
Clock input capacitance (Ta=–25 to +60˚C)
Parameter
Shift register clock input capacitance
Shift register final stage clock input capacitance
Reset clock input capacitance
Shift clock input capacitance
Symbol
C
1A
,C
2A
C
1B
,C
2B
C
R
C
S
V
IN
=12V
f =1MHz
Condition
min
—
—
—
—
typ
450
15
10
130
max
500
20
20
150
Unit
pF
pF
pF
pF
•
DC characteristics
Parameter
Power supply current
Symbol
I
DD
V
DD
=+12V
Condition
min
—
typ
6
max
12
Unit
mA
•
AC characteristics
Parameter
Signal output delay time
Symbol
t
OS
Condition
min
—
typ
50
max
—
Unit
ns
MN3610H
s
Optical Characteristics
CCD Linear Image Sensor
<Inspection conditions>
•
Ta=25˚C, V
DD
=12V, V
øH
=V
SH
=V
RH
=5V (pulse), f
C
=0.5MHz, f
R
=1MHz, T
int
(accumulation time)=10ms
•
Light source: Daylight type fluorescent lamp
•
Optical system: A slit with an aperture dimensions of 20mm
×
20mm is used at a distance of 200mm from the sensor (equivalent
to F=10).
•
Load resistance = 100k Ohms
•
These specifications apply to the 2048 valid pixels excluding the dummy pixels D1 to D6.
Parameter
Responsivity
Photo response non-uniformity
Odd/even bit non-uniformity
Saturation output voltage
Saturation exposure
Dark signal output voltage
Dark signal output non-uniformity
Shift register total transfer efficiency
Output impedance
Dynamic range
Signal output pin DC level
Compensation output pin DC level
Symbol
R
PRNU
O/E
V
SAT
SE
V
DRK
DSNU
STTE
Z
O
DR
V
OS
V
DS
Note 5
Note 6
Note 6
Note 6
Note 1
Note 2
Note 3
Note 3
Dark condition, see Note 4
Dark condition, see Note 4
Condition
min
10.0
—
—
1.5
0.10
—
—
92
—
—
3.5
3.5
—
typ
12.0
—
—
2.0
0.17
0.4
0.2
—
—
5000
4.5
4.5
20
max
14.0
10
3
—
—
1.0
2.0
—
1
—
6.0
6.0
100
V
V
mV
Unit
V/lx·s
%
%
V
lx·s
mV
mV
%
kΩ
Signal and compensation output pin DC level difference V
OS
– V
DS
Note 1) The photo response non-uniformity (PRNU) is defined by the following equation, where X
ave
is the average output voltage
of the 2048 valid pixels and
∆x
is the absolute value of the difference between X
ave
and the voltage of the maximum (or
minimum) output pixel, when the surface of the photo-sites is illuminated with light having a uniform distribution over the
entire surface.
x
×100
(%)
PRNU=
X
ave
The incident light intensity shall be 50% of the standard saturation light intensity.
Note 2) The odd/even bit non-uniformity (O/E) is defined by the following equation, where X
ave
is the average output voltage of
the 2048 valid pixels and Xn is the output voltage of the ‘n’th pixel, when the surface of the photo-sites is illuminated with
light having a uniform distribution over the entire surface.
∑|
Xn–Xn
+1
|
O/E=
n=1
×100
(%)
2047×X
ave
In other words, this is the value obtained by dividing the average of the output difference between the odd and even pixels
by the average output voltage of all the valid pixels. The incident light intensity shall be 50% of the standard saturation
light intensity.
Note 3) The Saturation output voltage (V
SAT
) is defined as the output voltage at the point when the linearity of the photoelectric
characteristics cannot be maintained as the incident light intensity is increased. (The light intensity of exposure at this
point is called the saturation exposure.)
Note 4) The dark signal output voltage (V
DRK
) is defined as the average output voltage of the 2048 pixels in the dark condition at
Ta=25˚C and T
int
=10ms. Normally, the dark output voltage doubles for every 8 to 10˚C rise in Ta, and is proportional to
T
int
.
The dark signal output non-uniformity (DSNU) is defined as the difference between the maximum output voltage among
all the valid pixels and V
DRK
in the dark condition at Ta=25˚C and T
int
=10ms.
V
DRK
DSNU
Note 5) The dynamic range is defined by the following equation.
V
SAT
V
DRK
Since the dark signal voltage is proportional to the accumulation time, the dynamic range becomes wider when the
accumulation time is shorter.
DR=
2047
CCD Linear Image Sensor
MN3610H
Note 6) The signal output pin DC level (V
OS
) and the compensation output pin DC level (V
DS
) are the voltage values shown in the
following figure.
OS
V
OS
V
SS
V
SS
Reset feed
through level
DS
V
DS
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Pin Descriptions
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Symbol
OS
DS
V
DD
ø
R
ø
1B
ø
1A
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
ø
2A
ø
2B
ø
SG
V
SS
Signal output
Compensation output
Power supply
Reset clock
CCD Final stage clock (Phase 1)
CCD Clock (Phase 1)
Non connection
Non connection
Non connection
Non connection
Non connection
Non connection
Non connection
Non connection
Non connection
Non connection
Non connection
Non connection
CCD Clock (Phase 2)
CCD Final stage clock (Phase 2)
Shift gate clock
Ground
Pin name
Condition
Note) Connect all NC pins externally to V
SS
.
s
Construction of the Image Sensor
The MN3610H can be made up of the three sections of—a)
photo detector region, b) CCD transfer region (shift register),
and c) output region.
a) Photo detector region
•
The photoelectric conversion device consists of an 11µm
floating photodiode and a 3µm channel stopper for each
pixel, and 2048 of these devices are linearly arranged side by
side at a pitch of 14µm.
•
The photo detector's windows are 14µm
×
14µm squares and
light incident on areas other than these windows is optically
shut out.
•
The photo detector is provided with 52 optically shielded
pixels (black dummy pixels) which serve as the black
reference.
b) CCD Transfer region (shift register)
•
The light output that has been photoelectrically converted is
transferred to the CCD transfer for each odd and even pixel at
the timing of the shift clock (ø
SG
). The optical signal electric
charge transferred to this analog shift register is successively
transferred out and guided to the output region.
•
A buried type CCD that can be driven by a two phase clock
(ø
1
, ø
2
) is used for the analog shift register.
c) Output region
•
The signal charge that is transferred to the output region is
sent to the detector where impedance transformation is done
using two source follower stages.
•
The DC level component and the clock noise component not
containing optical signals are output from the DS pin.
•
By carrying out differential amplification of the two outputs
OS and DS externally, it is possible to obtain an output signal
with a high S/N ratio by reducing the clock noise, etc.
MN3610H
s
Timing Diagram
(1) I/O timing
Integration Time (Tint.)
CCD Linear Image Sensor
ø
SG
ø
1
ø
2
ø
R
1 2 3 4
6 7 8 9 10 11 58 59 60 61 62 63 64 65 66
2110 2112 2114 2116
2111 2113 2115
DS
OS
1 2 3 4
6 7 8
B
1
B
2
B
50
B
52
B
51
D
1
D
3
1 2 3
2047
2048
D
4
Blank feed
(for 8 pixels)
Black reference
pixel signal
(for 52 pixels)
D
2
D
5
D
6
D
7
D
8
Note) Repeat the transfer
pulses (cp) for
more than 1060
periods.
Valid pixel signal
(for 2048 pixels)
Invalid pixel signal
(for 5 pixels)
Invalid pixel signal
(for 3 pixels)
(2)Drive timing
ø
1
t
Cr
ø
2
90%
50%
10%
t
Cf
90%
50%
10%
t
Rh
90%
t
Rf
t
RW
10%
t
Rr
T
Reference level
Signal output voltage
90%
t
Sr
t
Sf
90%
ø
R
ø
SG
10%
90%
DS
t
OS
OS
ø
1
t
Ss
t
SW
t
Sh
s
Graphs and Characteristics
Spectral Response Characteristics
100
Under standard
operating condition
Relative responsivity (%)
80
60
40
20
0
400
500
600
700
Wavelength (nm)
800
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