DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5754
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
FEATURES
• Ideal for 460 MHz to 2.4 GHz medium output power amplification
• P
O (1 dB)
= 26.0 dBm TYP. @ V
CE
= 3.6 V, f = 1.8 GHz, P
in
= 15 dBm
• High collector efficiency:
η
C
= 60%
• UHS0-HV technology (f
T
= 25 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
2SC5754
2SC5754-T2
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10008EJ02V0DS (2nd edition)
Date Published March 2003 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 2001, 2003
2SC5754
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
13
5.0
1.5
500
735
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 38
×
38 mm, t = 0.4 mm polyimide PCB
THERMAL RESISTANCE
Parameter
Junction to Ambient Resistance
Symbol
R
th j-a
1
Test Conditions
Mounted on 38
×
38 mm, t = 0.4 mm
polyimide PCB
Stand alone device in free air
Ratings
170
Unit
°C/W
°C/W
R
th j-a
2
570
2
Data Sheet PU10008EJ02V0DS
2SC5754
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Reverse Transfer Capacitance
Maximum Available Power Gain
Linear Gain
Gain 1 dB Compression Output Power
Collector Efficiency
f
T
S
21e
2
C
re
Note 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 1 V, I
C
= 0 mA
V
CE
= 3 V, I
C
= 100 mA
−
−
40
−
−
60
1 000
1 000
100
nA
nA
−
V
CE
= 3 V, I
C
= 100 mA, f = 0.5 GHz
V
CE
= 3 V, I
C
= 100 mA, f = 2 GHz
V
CB
= 3 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 3 V, I
C
= 100 mA, f = 2 GHz
V
CE
= 3.6 V, I
Cq
= 20 mA, f = 1.8 GHz,
P
in
= 0 dBm, 1/2 Duty
V
CE
= 3.6 V, I
Cq
= 4 mA, f = 1.8 GHz,
P
in
= 15 dBm, 1/2 Duty
V
CE
= 3.6 V, I
Cq
= 4 mA, f = 1.8 GHz,
P
in
= 15 dBm, 1/2 Duty
16
5.0
−
−
−
−
−
20
6.5
1.0
12.0
12.0
26.0
60
−
−
1.5
−
−
−
−
GHz
dB
pF
dB
dB
dBm
%
MAG
Note 3
G
L
P
O (1 dB)
η
C
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
3.
MAG =
S
21
(K –
√
(K
2
– 1) )
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
R57
40 to 100
Data Sheet PU10008EJ02V0DS
3
2SC5754
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
1 000
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2.0
f = 1 MHz
1.5
Total Power Dissipation P
tot
(mW)
Mounted on Polyimide PCB
800 (38
×
38 mm, t = 0.4 mm)
735
600
1.0
400
205
Stand alone device
in free air
0.5
200
0
25
50
75
100
125
150
0
1
2
3
4
5
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1 000
100
10
1
0.1
0.01
V
CE
= 3 V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
450
I
B
: 0.5 mA step
400
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
I
B
= 0.5 mA
5
6
Collector Current I
C
(mA)
Collector Current I
C
(mA)
350
300
250
200
150
100
50
0.001
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
Base to Emitter Voltage V
BE
(V)
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 3 V
DC Current Gain h
FE
100
10
1
10
100
1 000
Collector Current I
C
(mA)
4
Data Sheet PU10008EJ02V0DS
2SC5754
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
20
15
10
5
0
0.1
|S
21e
|
2
1
Frequency f (GHz)
10
MSG
MAG
V
CE
= 3 V
I
C
= 100 mA
25
Gain Bandwidth Product f
T
(GHz)
V
CE
= 3 V
f = 0.5 GHz
20
15
10
5
0
1
10
100
1 000
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
V
CE
= 3 V
f = 1 GHz
MSG
MAG
20
V
CE
= 3 V
f = 2 GHz
15
|S
21e
|
2
10
15
MSG
10
MAG
5
5
|S
21e
|
2
0
1
10
100
1 000
0
1
10
100
1 000
Collector Current I
C
(mA)
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
V
CE
= 3 V
f = 2.5 GHz
15
10
MSG
MAG
5
|S
21e
|
2
0
1
10
100
1 000
Collector Current I
C
(mA)
Data Sheet PU10008EJ02V0DS
5
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