Schottky Barrier Diodes (SBD)
MA2Q739
(MA739)
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
4.4
±
0.3
0 to 0.05
•
Forward current (average) I
F(AV)
: 0.7 A type
•
Reverse voltage (DC value) V
R
: 90 V
•
Allowing automatic insertion with the emboss taping
2.5
±
0.3
I
Features
2
1
0.25
−
0.05
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage (DC)
Repetitive peak reverse voltage
Average forward current
*1
Non-repetitive peak forward
surge current
*2
Junction temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
T
j
T
stg
Rating
90
90
0.7
10
−40
to
+125
−40
to
+125
Unit
V
V
A
A
°C
°C
1.2
±
0.4
5.0
+
0.4
−
0.1
1.2
±
0.4
1 : Anode
2 : Cathode
New Mini-Power Type Package (2-pin)
Marking Symbol: PE
Note) *1 : With a printed-circuit board
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
I
Electrical Characteristics
T
a
=
25°C
Parameter
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
*
Symbol
I
R
V
F
C
t
t
rr
V
R
= 90 V
I
F
= 0.7 A
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA
I
rr
= 10 mA, R
L
= 100
Ω
50
100
Conditions
Min
Typ
Max
1
0.8
Unit
mA
V
pF
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 10 MHz
3. * : t
rr
measuring instrument
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Ω
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Ω
W.F.Analyzer
(SAS-8130)
R
i
=
50
Ω
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
526
2.15
±
0.3
+
0.1
1.4
±
0.2
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•
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