IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYC8-600P
3 January 2014
TO
-22
0
AC
Hyperfast power diode
Product data sheet
1. General description
Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package.
2. Features and benefits
•
•
•
•
•
Fast switching
Low leakage current
Low reverse recovery current
Low thermal resistance
Reduces switching losses in associated MOSFET
3. Applications
•
•
Continuous Current Mode (CCM) Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode power supplies
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5 ; T
mb
≤ 130 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
I
F
= 8 A; T
j
= 125 °C;
Fig. 6
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C;
Fig. 7
-
1.5
1.9
V
Conditions
Min
-
-
Typ
-
-
Max
600
8
Unit
V
A
Static characteristics
V
F
t
rr
forward voltage
Dynamic characteristics
reverse recovery time
-
12
18
ns
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
BYC8-600P
Hyperfast power diode
5. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
mb
cathode
anode
mounting base; connected to
cathode
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
TO-220AC (SOD59)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYC8-600P
TO-220AC
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
Version
SOD59
Type number
7. Marking
Table 4.
Marking codes
Marking code
BYC8-600P
Type number
BYC8-600P
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
DC
δ = 0.5 ; T
mb
≤ 130 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 130 °C;
square-wave pulse
BYC8-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Conditions
Min
-
-
-
-
-
Max
600
600
600
8
16
Unit
V
V
V
A
A
Product data sheet
3 January 2014
2/9
NXP Semiconductors
BYC8-600P
Hyperfast power diode
Symbol
I
FSM
Parameter
non-repetitive peak forward
current
Conditions
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
Min
-
-
-65
-
Max
91
100
175
175
003aaj899
Unit
A
A
°C
°C
T
stg
T
j
24
P
tot
(W)
16
storage temperature
junction temperature
003aaj898
δ=1
0.5
20
P
tot
(W)
16
2.2
2.8
4.0
8
a = 1.57
1.9
0.2
0.1
12
8
4
0
0
4
8
I
F(AV)
(A)
12
0
0
2
4
6
I
F(AV)
(A)
8
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
12
I
F(AV)
(A)
8
003aaj900
10
4
I
FSM
(A)
10
3
I
F
003aaj902
I
FSM
130 °C
t
t
p
T
j(init)
= 25 °C max
4
10
2
0
-50
0
50
100
150
200
T
mb
(°C)
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Average forward current as a function of
mounting base temperature; maximum values
Fig. 4.
Non-repetitive peak forward current as a
function of pulse width; square waveform;
maximum values
© NXP N.V. 2014. All rights reserved
BYC8-600P
All information provided in this document is subject to legal disclaimers.
Product data sheet
3 January 2014
3/9
NXP Semiconductors
BYC8-600P
Hyperfast power diode
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
10
Z
th(j-mb)
(K/W)
1
Conditions
Fig. 5
Min
-
Typ
-
Max
2.5
Unit
K/W
R
th(j-a)
in free air
-
60
-
K/W
001aag913
10
- 1
P
δ=
t
p
T
10
- 2
t
p
10
- 3
10
- 6
10
- 5
10
- 4
10
- 3
10
- 2
t
T
1
10
t
p
(s)
10
- 1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse width
10. Characteristics
Table 7.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 8 A; T
j
= 25 °C;
Fig. 6
I
F
= 8 A; T
j
= 125 °C;
Fig. 6
I
F
= 8 A; T
j
= 150 °C
I
R
reverse current
V
R
= 600 V; T
j
= 25 °C
V
R
= 600 V; T
j
= 125 °C
Dynamic characteristics
Q
r
recovered charge
I
F
= 8 A; V
R
= 200 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C;
Fig. 7
I
F
= 8 A; V
R
= 200 V; dI
F
/dt = 200 A/µs;
T
j
= 125 °C;
Fig. 7
t
rr
reverse recovery time
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 25 °C;
Fig. 7
BYC8-600P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Min
-
-
-
-
-
Typ
-
1.5
1.4
-
-
Max
3.4
1.9
-
20
200
Unit
V
V
V
µA
µA
Static characteristics
-
-
-
17
90
19
-
-
-
nC
nC
ns
Product data sheet
3 January 2014
4/9
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