VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 1.1 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
Cathode
Anode
• Very low forward voltage drop
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and
long term reliability
DO-204AL
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-204AL (DO-41)
1.1 A
50 V, 60 V
See Electrical table
11.0 mA at 125 °C
150 °C
Single die
2.0 mJ
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for commercial level
• Halogen-free according to IEC 61249-2-21 definition
(-M3 only)
DESCRIPTION
The VS-11DQ... axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
1 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
1.1
50/60
150
0.53
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-11DQ05
50
VS-11DQ05-M3
50
VS-11DQ06
60
VS-11DQ06-M3
60
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 84 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1 A, L = 4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
VALUES
1.1
150
25
2.0
1.0
mJ
A
A
UNITS
Revision: 21-Sep-11
Document Number: 93206
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
1A
Maximum forward voltage drop
See fig. 1
V
FM (1)
2A
1A
2A
Maximum reverse leakage current
See fig. 2
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.58
0.76
0.53
0.64
1.0
11
55
8.0
10 000
mA
pF
nH
V/µs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
Approximate weight
SYMBOL
T
J (1)
, T
Stg
R
thJA
R
thJL
DC operation
Without cooling fin
DC operation
See fig. 4
TEST CONDITIONS
VALUES
- 40 to 150
100
°C/W
81
0.33
0.012
Case style DO-204AL (DO-41)
11DQ05
11DQ06
g
oz.
UNITS
°C
Marking device
Note
(1)
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
Revision: 21-Sep-11
Document Number: 93206
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3
www.vishay.com
Vishay Semiconductors
160
I
F
- Instantaneous Forward Current (A)
10
Allowable Case Temperature (°C)
140
120
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
see
note (1)
Square
wave (D = 0.50)
80 % Rated V
R
applied
DC
1
T = 150 °C
T = 125 °C
T = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
93206_04
93206_01
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Ambient Temperature vs.
Average Forward Current, Printed Circuit Board Mounted
0.8
100
I
R
- Reverse Current (mA)
T
J
= 150° C
Average Power Loss (W)
10
1
0.6
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
DC
T
J
= 125° C
0.1
0.01
0.001
0.0001
0
10
20
30
40
50
60
70
T
J
= 25° C
0.4
0.2
0
0
93206_05
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
93206_02
V
R
- Reverse Voltage (V)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
Fig. 2 - - Typical Values of Reverse Current vs.
Reverse Voltage
100
T
C
T
- Junction Capacitance (pF)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At Any Rated Load Condition
And With rated V
RRM
Applied
Following
Surge
T
J
= 25 °C
100
T
J
= 25 °C
10
10
100
1000
10 000
10
0
93206_03
10
20
30
40
50
60
70
V
R
- Reverse Voltage (V)
Fig. 3 - - Typical Junction Capacitance vs.
Reverse Voltage
93206_06
t
p
- Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 21-Sep-11
Document Number: 93206
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
11
2
D
3
Q
4
06
5
TR
6
-M3
7
Vishay Semiconductors product
11 = 1.1 A (axial and small packages - current is x 10)
D = DO-41 package
Q = Schottky Q.. series
06 = Voltage ratings
TR = Tape and reel package
None = Bulk package
05 = 50 V
06 = 60 V
-
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-11DQ05
VS-11DQ05TR
VS-11DQ05-M3
VS-11DQ05TR-M3
VS-11DQ06
VS-11DQ06TR
VS-11DQ06-M3
VS-11DQ06TR-M3
QUANTITY PER T/R
1000
5000
1000
5000
1000
5000
1000
5000
MINIMUM ORDER QUANTITY
1000
5000
1000
5000
1000
5000
1000
5000
PACKAGING DESCRIPTION
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95241
www.vishay.com/doc?95304
www.vishay.com/doc?95338
Revision: 21-Sep-11
Document Number: 93206
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Axial DO-204AL (DO-41)
DIMENSIONS
in millimeters (inches)
2.70 (0.106)
DIA.
2.29 (0.090)
Cathode band
27.0 (1.06) MIN.
(2 places)
27.0 (1.06) MIN.
(2 places)
5.21 (0.205)
MAX.
5.21 (0.205)
MAX.
1.27 (0.050) MAX.
Flash (2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
0.86 (0.034)
DIA.
0.72 (0.028)
(2 places)
2.70 (0.106)
DIA.
2.29 (0.090)
Revision: 29-Aug-11
Document Number: 95241
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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