EEPROM Module, 256KX8, 150ns, Parallel, CMOS, CDIP32, DUAL CAVITY, CERAMIC, DIP-32
| 参数名称 | 属性值 |
| 厂商名称 | White Microelectronics |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| 最长访问时间 | 150 ns |
| 其他特性 | 10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION |
| 数据保留时间-最小值 | 10 |
| 耐久性 | 10000 Write/Erase Cycles |
| JESD-30 代码 | R-CDIP-T32 |
| 内存密度 | 2097152 bit |
| 内存集成电路类型 | EEPROM MODULE |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 字数 | 262144 words |
| 字数代码 | 256000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 256KX8 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 编程电压 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| 最长写入周期时间 (tWC) | 10 ms |
| Base Number Matches | 1 |
| 5962-9315502HXX | 5962-9315402HXX | 5962-9315401HXX | GUB-GL0BLF-01-2183-D-C | 5962-9309104HYX | 5962-9315501HXX | 5962-9309101HYX | 5962-9309102HYX | WE512K8-150CQA | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | EEPROM Module, 256KX8, 150ns, Parallel, CMOS, CDIP32, DUAL CAVITY, CERAMIC, DIP-32 | EEPROM Module, 128KX8, 150ns, Parallel, CMOS, CDIP32, SINGLE CAVITY, CERAMIC, DIP-32 | EEPROM Module, 128KX8, 200ns, Parallel, CMOS, CDIP32, SINGLE CAVITY, CERAMIC, DIP-32 | Array/Network Resistor, Bussed, Thin Film, 0.1W, 218000ohm, 0.5% +/-Tol, -100,100ppm/Cel, 5030, | EEPROM Module, 512KX8, 200ns, Parallel, CMOS, CDIP32, SINGLE CAVITY, CERAMIC, DIP-32 | EEPROM Module, 256KX8, 200ns, Parallel, CMOS, CDIP32, DUAL CAVITY, CERAMIC, DIP-32 | EEPROM Module, 512KX8, 150ns, Parallel, CMOS, CDIP32, SINGLE CAVITY, CERAMIC, DIP-32 | EEPROM Module, 512KX8, 300ns, Parallel, CMOS, CDIP32, SINGLE CAVITY, CERAMIC, DIP-32 | EEPROM Module, 512KX8, 150ns, Parallel, CMOS, CDIP32, |
| Reach Compliance Code | unknown | unknown | unknown | compliant | unknown | unknown | unknown | unknown | unknown |
| 端子数量 | 32 | 32 | 32 | 20 | 32 | 32 | 32 | 32 | 32 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | SMT | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 技术 | CMOS | CMOS | CMOS | THIN FILM | CMOS | CMOS | CMOS | CMOS | CMOS |
| 厂商名称 | White Microelectronics | - | - | - | - | White Microelectronics | White Microelectronics | White Microelectronics | White Microelectronics |
| 最长访问时间 | 150 ns | 150 ns | 200 ns | - | 200 ns | 200 ns | 150 ns | 300 ns | 150 ns |
| 其他特性 | 10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION | 10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION | 10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION | - | 10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION | 10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION | 10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION | 10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION | 10000 WRITE ENDURANCE CYCLES; 10 YEARS OF DATA RETENTION |
| 数据保留时间-最小值 | 10 | 10 | 10 | - | 10 | 10 | 10 | 10 | 10 |
| 耐久性 | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles | - | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles | 10000 Write/Erase Cycles |
| JESD-30 代码 | R-CDIP-T32 | R-CDIP-T32 | R-CDIP-T32 | - | R-CDIP-T32 | R-CDIP-T32 | R-CDIP-T32 | R-CDIP-T32 | R-CDIP-T32 |
| 内存密度 | 2097152 bit | 1048576 bit | 1048576 bit | - | 4194304 bit | 2097152 bit | 4194304 bit | 4194304 bit | 4194304 bit |
| 内存集成电路类型 | EEPROM MODULE | EEPROM MODULE | EEPROM MODULE | - | EEPROM MODULE | EEPROM MODULE | EEPROM MODULE | EEPROM MODULE | EEPROM MODULE |
| 内存宽度 | 8 | 8 | 8 | - | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | - | 1 | 1 | 1 | 1 | 1 |
| 字数 | 262144 words | 131072 words | 131072 words | - | 524288 words | 262144 words | 524288 words | 524288 words | 524288 words |
| 字数代码 | 256000 | 128000 | 128000 | - | 512000 | 256000 | 512000 | 512000 | 512000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | - | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 组织 | 256KX8 | 128KX8 | 128KX8 | - | 512KX8 | 256KX8 | 512KX8 | 512KX8 | 512KX8 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | - | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | - | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 编程电压 | 5 V | 5 V | 5 V | - | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | MIL-STD-883 | MIL-PRF-38534 Class H | MIL-STD-883 | - | MIL-PRF-38534 Class H | MIL-STD-883 | MIL-PRF-38534 Class H | MIL-STD-883 | - |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | - | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | - | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | - | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | - | NO | NO | NO | NO | NO |
| 温度等级 | MILITARY | MILITARY | MILITARY | - | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | - | DUAL | DUAL | DUAL | DUAL | DUAL |
| 最长写入周期时间 (tWC) | 10 ms | 10 ms | 10 ms | - | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms |
| Base Number Matches | 1 | 1 | 1 | - | 1 | 1 | 1 | 1 | - |
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