SUD30N03-30
Vishay Siliconix
N-Channel 30-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.030 @ V
GS
= 10 V
0.045 @ V
GS
= 4.5 V
I
D
(A)
"30
"25
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD30N03-30
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
"30
"21
"40
30
50
3
a
–55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on 4” x 4” FR4 Board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70268
S-57253—Rev. D, 24-Feb-98
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FaxBack 408-970-5600
Symbol
R
thJA
R
thJC
Limit
50
3.0
Unit
_C/W
2-1
SUD30N03-30
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
Z
G
V l
D i C
I
DSS
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
D i S
O S
R i
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 15 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 15 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 12.5 A
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 15 A
10
30
0.020
0.033
0.036
0.030
22
0.030
0.050
0.054
0.045
S
W
30
V
1.0
"100
1
50
150
A
mA
A
nA
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0 5
W
V,
0.5
I
D
^
30 A, V
GEN
= 10 V R
G
= 7 5
W
A
V,
7.5
V,
V
DS
= 15 V, V
GS
= 10 V I
D
= 30 A
V
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1170
320
60
18
5.5
2
10
10
25
15
20
20
ns
40
30
35
nC
C
pF
F
Source-Drain Diode Ratings and Characteristic (T
C
= 25_C)
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
I
SM
V
SD
t
rr
I
F
= 30 A, V
GS
= 0 V
I
F
= 30 A, di/dt = 100 A/ms
1.1
50
40
1.5
100
A
V
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
c. Independent of operating temperature.
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2-2
Document Number: 70268
S-57253—Rev. D, 24-Feb-98
SUD30N03-30
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
V
GS
= 10, 9, 8, 7, 6, 5 V
32
I
D
– Drain Current (A)
I
D
– Drain Current (A)
32
40
Transfer Characteristics
24
4V
16
24
16
8
3V
0
0
1
2
3
4
5
8
T
C
= 150_C
25_C
–55_C
0
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
30
T
C
= –55_C
24
g
fs
– Transconductance (S)
25_C
r
DS(on)
– On-Resistance (
Ω
)
0.06
0.05
0.04
0.03
0.02
0.01
0
0
8
16
24
32
40
0
0.07
On-Resistance vs. Drain Current
18
125_C
V
GS
= 4.5 V
12
V
GS
= 10 V
6
0
8
16
24
32
40
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
1500
C
iss
1200
C – Capacitance (pF)
V
GS
– Gate-to-Source Voltage (V)
8
10
Gate Charge
V
DS
= 15 V
I
D
= 30 A
900
C
oss
600
6
4
300
C
rss
2
0
0
6
12
18
24
30
0
0
3
6
9
12
15
18
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 70268
S-57253—Rev. D, 24-Feb-98
www.vishay.com
S
FaxBack 408-970-5600
2-3
SUD30N03-30
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.8
V
GS
= 10 V
I
D
= 15 A
I
S
– Source Current (A)
100
Source-Drain Diode Forward Voltage
1.6
r
DS(on)
– On-Resistance (
Ω
)
(Normalized)
1.4
T
J
= 175_C
1.2
10
T
J
= 25_C
1.0
0.8
0.6
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Drain Current vs. CaseTemperature
35
200
100
28
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Limited
by r
DS(on)
Safe Operating Area
21
10
1 ms
10 ms
100 ms
dc
T
C
= 25_C
Single Pulse
14
1
7
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
T
C
– Case Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10
–4
10
–3
10
–2
Square Wave Pulse Duration (sec)
10
–1
1
3
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FaxBack 408-970-5600
2-4
Document Number: 70268
S-57253—Rev. D, 24-Feb-98
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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