Si4410DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
D
TrenchFETr Power MOSFET
I
D
(A)
10
8
r
DS(on)
(W)
0.0135 @ V
GS
= 10 V
0.020 @ V
GS
= 4.5 V
D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information: Si4410DY-REVA
Si4410DY-T1-REVA (with Tape and Reel)
Si4410DY-REVA-E3 (Lead free)
Si4410DY-T1-A-E3 (Lead free with Tape and Reel)
8
7
6
5
D
D
D
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
30
"20
10
8
50
2.3
2.5
1.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 71726
S-40838—Rev. L, 03-May-04
www.vishay.com
Symbol
R
thJA
R
thJF
Limit
50
22
Unit
_C/W
1
Si4410DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Drain Source On State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
=10 A
V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 15 V, I
D
= 10 A
I
S
= 2.3 A, V
GS
= 0 V
20
0.011
0.015
38
0.7
1.1
0.0135
0.020
1.0
3.0
"100
1
25
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gt
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.3 A, di/dt = 100 A/ms
V
DD
= 25 V, R
L
= 25
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
V
DS
= 15 V, V
GS
= 5 V, I
D
= 10 A
V
DS
= 15 V V
GS
= 10 V I
D
= 10 A
V,
V,
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
0.5
20
37
7
7.0
1.5
19
9
70
20
40
2.6
30
20
100
80
80
ns
W
34
60
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing. Values shown are for product revision A.
www.vishay.com
2
Document Number: 71726
S-40838—Rev. L, 03-May-04
Si4410DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
Output Characteristics
V
GS
= 10 V thru 4 V
50
Transfer Characteristics
40
I D - Drain Current (A)
I D - Drain Current (A)
40
30
30
20
20
T
C
= 125_C
25_C
10
3V
10
- 55_C
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
0.030
0.025
r
DS(on)
- On-Resistance (W)
0.020
On-Resistance vs. Drain Current
3000
2500
C - Capacitance (pF)
2000
1500
1000
500
0
C
oss
C
rss
C
iss
Capacitance
V
GS
= 4.5 V
0.015
V
GS
= 10 V
0.010
0.005
0.000
0
10
20
30
40
50
I
D
- Drain Current (A)
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
10
V
DS
= 15 V
I
D
= 10 A
V GS - Gate-to-Source Voltage (V)
8
r
DS(on)
- On-Resistance (W)
1.5
2.0
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 10 A
(Normalized)
6
1.0
4
2
0.5
0
0
8
16
24
32
40
0.0
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (_C)
Document Number: 71726
S-40838—Rev. L, 03-May-04
www.vishay.com
3
Si4410DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
40
Source-Drain Diode Forward Voltage
0.10
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
T
J
= 150_C
10
T
J
= 25_C
r
DS(on)
- On-Resistance (
W
)
0.08
0.06
0.04
I
D
= 10 A
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
0.6
0.4
0.2
V GS(th) Variance (V)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50
Threshold Voltage
80
Single Pulse Power
60
I
D
= 250
mA
Power (W)
40
20
- 25
0
25
50
75
100
125
150
0
0.01
0.10
Time (sec)
1.00
10.00
T
J
- Temperature (_C)
2
1
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
P
DM
t
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
2
t
1
1. Duty Cycle, D =
t
2
2. Per Unit Base = R
thJA
= 50
_
C/W
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
1
10
30
www.vishay.com
4
Document Number: 71726
S-40838—Rev. L, 03-May-04
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
