Operating Temperature Range ........................ -40NC to +125NC
Junction Temperature .....................................................+150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
8 TDFN
Junction-to-Ambient Thermal Resistance (q
JA
) ..........42°C/W
Junction-to-Case Thermal Resistance (q
JC
) .................8°C/W
8 SO
Junction-to-Ambient Thermal Resistance (q
JA
) ........136°C/W
Junction-to-Case Thermal Resistance (q
JC
) ...............38°C/W
8 µMAX
Junction-to-Ambient Thermal Resistance (q
JA
) .....206.3°C/W
Junction-to-Case Thermal Resistance (q
JC
) ...............42°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
CC
= 15V, V
EE
= -15V, R
L
= 10kI to V
GND
, V
IN+
= V
IN-
= V
GND
= 0V, V
SHDN
= V
GND
, T
A
= -40NC to +125NC. Typical values are
at T
A
= +25NC, unless otherwise noted.) (Note 2)
PARAMETER
POWER SUPPLY
Supply Voltage Range
Supply Current
Power-Supply Rejection Ratio
SHUTDOWN
Device disabled
Shutdown Input Voltage
V
SHDN
Device enabled
Shutdown Current
DC SPECIFICATIONS
Input Offset Voltage
Input Offset Voltage Drift
Input Bias Current
Input Offset Current
Input Common-Mode Range
V
OS
QDV
OS
I
B
I
OS
V
CM
Guaranteed by CMRR
V
EE
+
1.8
T
A
= +25NC
-40NC
P
T
A
P
+125NC
(Note 3)
0.15
30
15
30
125
165
0.5
180
100
V
CC
-
1.4
FV
FV/NC
nA
nA
V
I
SHDN
V
SHDN
= V
CC
V
CC
- 0.35
V
EE
1
V
CC
V
CC
- 3.0
15
V
V
CC
I
CC
PSRR
T
A
= +25NC
-40NC
P
T
A
P
+125NC
125
120
Guaranteed by PSRR
4.5
3.9
140
36
6.5
V
mA
dB
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
FA
2
Maxim Integrated
MAX9632
36V, Precision, Low-Noise,
Wide-Band Amplifier
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 15V, V
EE
= -15V, R
L
= 10kI to V
GND
, V
IN+
= V
IN-
= V
GND
= 0V, V
SHDN
= V
GND
, T
A
= -40NC to +125NC. Typical values are
at T
A
= +25NC, unless otherwise noted.) (Note 2)
PARAMETER
Common-Mode Rejection Ratio
SYMBOL
CMRR
CONDITIONS
V
EE
+ 1.8V
P
V
CM
P
V
CC
- 1.4V, T
A
= +25NC
V
EE
+ 1.8V
P
V
CM
P
V
CC
- 1.4V,
-40NC
P
T
A
P
+125NC
V
EE
+ 0.2V
P
V
OUT
P
V
CC
- 0.2V, R
L
= 10kI
V
EE
+ 0.6V
P
V
OUT
P
V
CC
- 0.6V, R
L
= 600I
V
CC
- V
OUT
V
OUT
- V
EE
T
A
= +25NC
R
L
= 10kI
R
L
= 600I
RL = 10kI
RL = 600I
MIN
120
110
125
120
140
135
50
150
50
150
56
55
0
P
V
OUT
P
5V
To 0.0015%, V
OUT
= 10V
P-P
, C
L
= 100pF,
AV = 1V/V
f = 1kHz, V
OUT
= 3V
RMS
, R
L
= 600I, AV
= 1V/V
f = 10kHz, V
OUT
= 3V
RMS
, R
L
= 600I, AV
= 1V/V
f = 1kHz
0.1Hz
P
f
P
10Hz
i
N
C
L
f = 1kHz
No sustained oscillation, AV = 1V/V
30
600
-136
dB
-128
0.94
65
3.75
350
nV/√Hz
nV
P-P
pA/√Hz
pF
150
400
150
400
mA
MHz
V/Fs
ns
mV
TYP
135
dB
MAX
UNITS
Large-Signal Gain
A
VOL
V
OH
dB
Output Voltage Swing
VOL
Short-Circuit Current
AC SPECIFICATIONS
Gain-Bandwidth Product
Slew Rate
Settling Time
GBWP
SR
t
S
I
SC
Total Harmonic Distortion
THD
Input-Voltage Noise Density
Input Voltage Noise
Input-Current Noise Density
Capacitive Loading
e
N
Note 2:
All devices are 100% production tested at TA = +25NC. Temperature limits are guaranteed by design.
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