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IS61NLF51236-75TQLI: 产品描述SRAM 18M (512Kx36) 7.5ns Sync SRAM 3.3v; 产品类别存储; 文件大小452KB，共35页; 制造商ISSI(芯成半导体); 官网地址http://www.issi.com/

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IS61NLF51236-75TQLI概述

SRAM 18M (512Kx36) 7.5ns Sync SRAM 3.3v

IS61NLF51236-75TQLI规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)
产品种类 Product Category	SRAM
RoHS	Details
Memory Size	18 Mbit
Access Time	7.5 ns
Maximum Clock Frequency	117 MHz
电源电压-最大 Supply Voltage - Max	3.465 V
电源电压-最小 Supply Voltage - Min	3.135 V
Supply Current - Max	475 mA
最小工作温度 Minimum Operating Temperature	- 40 C
最大工作温度 Maximum Operating Temperature	+ 85 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	TQFP-100
系列 Packaging	Tray
数据速率 Data Rate	SDR
类型 Type	Synchronous
Number of Ports	4
Moisture Sensitive	Yes
工厂包装数量 Factory Pack Quantity	72
单位重量 Unit Weight	0.023175 oz

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IS61NLF25672/IS61NVF25672

IS61NLF51236/IS61NVF51236

IS61NLF102418/IS61NVF102418

NOVEMBER 2013

256K x 72, 512K x 36 and 1M x 18

18Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM

FEATURES

• 100 percent bus utilization

• No wait cycles between Read and Write

• Internal self-timed write cycle

• Individual Byte Write Control

• Single Read/Write control pin

• Clock controlled, registered address,

data and control

DESCRIPTION

The 18 Meg 'NLF/NVF' product family feature high-speed,

low-power synchronous static RAMs designed to provide

a burstable, high-performance, 'no wait' state, device

for networking and communications applications. They

are organized as 256K words by 72 bits, 512K words

by 36 bits and 1M words by 18 bits, fabricated with

ISSI

advanced CMOS technology.

Incorporating a 'no wait' state feature, wait cycles are

eliminated when the bus switches from read to write, or

write to read. This device integrates a 2-bit burst counter,

high-speed SRAM core, and high-drive capability outputs

into a single monolithic circuit.

All synchronous inputs pass through registers are controlled

by a positive-edge-triggered single clock input. Operations

may be suspended and all synchronous inputs ignored

when Clock Enable,

CKE is HIGH. In this state the internal

device will hold their previous values.

All Read, Write and Deselect cycles are initiated by the ADV

input. When the ADV is HIGH the internal burst counter

is incremented. New external addresses can be loaded

when ADV is LOW.

Write cycles are internally self-timed and are initiated by

the rising edge of the clock inputs and when

WE is LOW.

Separate byte enables allow individual bytes to be written.

A burst mode pin (MODE) defines the order of the burst

sequence. When tied HIGH, the interleaved burst sequence

is selected. When tied LOW, the linear burst sequence is

selected.

• Interleaved or linear burst sequence control us-

ing MODE input

• Three chip enables for simple depth expansion

and address pipelining

• Power Down mode

• Common data inputs and data outputs

•

CKE

pin to enable clock and suspend operation

• JEDEC 100-pin TQFP, 165-ball PBGA and 209-

ball (x72) PBGA packages

• Power supply:

NVF: V

2.5V (± 5%), V

ddq

2.5V (± 5%)

NLF: V

3.3V (± 5%), V

ddq

3.3V/2.5V (± 5%)

• JTAG Boundary Scan for PBGA packages

• Industrial temperature available

• Lead-free available

FAST ACCESS TIME

Symbol

Parameter

Clock Access Time

Cycle Time

Frequency

6.5

7.5

133

7.5

8.5

117

Units

MHz

Copyright © 2013 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liabil-

ity arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any

published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause

failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written

assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. E

10/25/2013

IS61NLF51236-75TQLI相似产品对比

	IS61NLF51236-75TQLI	IS61NVF51236-65TQL	IS61NLF51236-7.5B3-TR	IS61NLF51236-7.5B3I	IS61NVF51236-7.5TQI	IS61NLF51236	IS61NLF51236-6.5B3	IS61NLF51236-6.5B3I	IS61NLF51236-6.5TQI	IS61NLF51236-7.5TQI
描述	SRAM 18M (512Kx36) 7.5ns Sync SRAM 3.3v	SRAM 18Mb (512Kx36) 6.5ns Sync SRAM 2.5v	SRAM 18Mb 512Kx36 7.5ns 3.3v/2.5v I/O	SRAM 18Mb,"No-Wait"/Flowthrough,Sync,512K x 36,7.5ns,3.3v/2.5v - I/O,165 Ball BGA	SRAM 18Mb (512Kx36) 7.5ns Sync SRAM 2.5v	SRAM 18Mb,"No-Wait"/Flowthrough,Sync,512K x 36,3.3v/2.5v I/O	SRAM 18Mb,"No-Wait"/Flowthrough,Sync,512K x 36,6.5ns,3.3v/2.5v - I/O,165 Ball BGA	SRAM 18Mb,"No-Wait"/Flowthrough,Sync,512K x 36,6.5ns,3.3v/2.5v - I/O,165 Ball BGA	SRAM 18Mb,"No-Wait"/Flowthrough,Sync,512K x 36,6.5ns,3.3v/2.5v - I/O,100 Pin TQFP	SRAM 18Mb 512Kx36 7.5ns Sync SRAM 3.3v
Product Attribute	Attribute Value	Attribute Value	Attribute Value	-	-	Attribute Value	Attribute Value	Attribute Value	Attribute Value	-
制造商 Manufacturer	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	-	-	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)	-
产品种类 Product Category	SRAM	SRAM	SRAM	-	-	SRAM	SRAM	SRAM	SRAM	-
Memory Size	18 Mbit	18 Mbit	18 Mbit	-	-	-	18 Mbit	18 Mbit	18 Mbit	-
Access Time	7.5 ns	6.5 ns	7.5 ns	-	-	-	6.5 ns	6.5 ns	6.5 ns	-
Maximum Clock Frequency	117 MHz	133 MHz	117 MHz	-	-	-	133 MHz	133 MHz	133 MHz	-
电源电压-最大 Supply Voltage - Max	3.465 V	2.625 V	3.465 V	-	-	-	3.465 V	3.465 V	3.465 V	-
电源电压-最小 Supply Voltage - Min	3.135 V	2.375 V	3.135 V	-	-	-	3.135 V	3.135 V	3.135 V	-
Supply Current - Max	475 mA	450 mA	425 mA	-	-	-	450 mA	500 mA	500 mA	-
最小工作温度 Minimum Operating Temperature	- 40 C	0 C	0 C	-	-	-	0 C	- 40 C	- 40 C	-
最大工作温度 Maximum Operating Temperature	+ 85 C	+ 70 C	+ 70 C	-	-	-	+ 70 C	+ 85 C	+ 85 C	-
安装风格 Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	-	-	-	SMD/SMT	SMD/SMT	SMD/SMT	-
封装 / 箱体 Package / Case	TQFP-100	TQFP-100	BGA-165	-	-	-	BGA-165	BGA-165	TQFP-100	-
数据速率 Data Rate	SDR	SDR	SDR	-	-	-	SDR	SDR	SDR	-
类型 Type	Synchronous	Synchronous	Synchronous	-	-	-	Synchronous	Synchronous	Synchronous	-
Number of Ports	4	4	4	-	-	-	4	4	4	-
工厂包装数量 Factory Pack Quantity	72	72	2000	-	-	-	144	250	72	-

IS61NLF51236-75TQLI

IS61NLF51236-75TQLI在线购买

IS61NLF51236-75TQLI概述

IS61NLF51236-75TQLI规格参数

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